公开(公告)号：US5363397A

公开(公告)日：1994-11-08

申请号：US968109

申请日：1992-10-29

Applicant: Reuben T. Collins ,  Sandip Tiwari

Inventor： Reuben T. Collins ,  Sandip Tiwari

IPC: H01L33/00 ,  G02B6/36 ,  G02B6/42 ,  H01S5/00 ,  H01S5/028 ,  H01S5/10 ,  H01S5/125 ,  H01S5/323 ,  H01S3/06 ,  H01S3/08

CPC classification number: H01S5/028 ,  G02B6/423 ,  H01S5/0207 ,  H01S5/02284 ,  H01S5/0281 ,  H01S5/1039 ,  H01S5/125 ,  H01S5/3202 ,  H01S5/32308 ,  H01S5/32391 ,  H01S5/4031

Abstract: An edge emitting laser combines many of the desirable attributes of the common forms of surface-emitting and edge-emitting laser structures together with elimination of their drawbacks. The laser cavity of a device according to the present invention is short (on the order of the wavelength of light in the cavity medium) and current is injected into the optical cavity substantially perpendicular to the plane of emitted light and parallel to the plane of reflective mirrors. The use of a short optical cavity permits single mode laser operation because of broad mode to mode spacing and large changes in reflectivity between wavelengths. Injecting current into the cavity perpendicular to the direction of light emission provides low power operation because the resistance associated with the injected current is low. The resistance is low because current does not cross boundaries between the different material layers forming the reflective mirrors and the optical cavity. A groove in the semiconductor substrate is formed which aligns an optical fiber to one edge of the laser device. The formation of an optical device incorporating this laser structure is inexpensive to manufacture because the laser is based on planar semiconductor fabrication techniques and the optical alignment of an optical fiber to the laser has been defined by the groove adjacent the laser device.

Abstract translation: 边缘发射激光器结合了许多常见形式的表面发射和边缘发射激光器结构的所需属性，同时消除了它们的缺点。 根据本发明的装置的激光腔是短的（在空腔介质中的光的波长的数量级），并且电流被注入基本上垂直于发射光的平面并平行于反射平面的光腔中 镜子。 使用短的光学腔允许单模激光操作，因为宽模式到模式间隔和波长之间的反射率的大的变化。 注入垂直于光发射方向的空腔中的电流提供低功率操作，因为与注入电流相关联的电阻低。 电阻很低，因为电流不会跨越形成反射镜和光腔的不同材料层之间的边界。 形成半导体衬底中的凹槽，其将光纤对准激光器件的一个边缘。 结合这种激光结构的光学器件的形成制造成本低廉，因为激光器是基于平面半导体制造技术，并且光纤到激光器的光学对准已经由邻近激光器件的凹槽限定。

公开(公告)号：US07250598B2

公开(公告)日：2007-07-31

申请号：US11072017

申请日：2005-03-04

Applicant: Russell E. Hollingsworth ,  Reuben T. Collins

Inventor： Russell E. Hollingsworth ,  Reuben T. Collins

IPC: G11B11/00

CPC classification number: G01Q10/04 ,  G01Q60/22 ,  Y10S977/862

Abstract: A plasmon enhanced near-field optical probe has an optical coupler with an end face and a metal coating forming at least one plasmon enhancement structure. An extension provides probe-to-sample separation feedback. A microscope cantilever has a lever arm with an aperture, a tip to provide tip-to-sample separation feedback, and a plasmon enhancement structure. An air bearing slider apparatus has a base, air bearing slider pads, and a metal film forming a plasmon enhancement structure about an aperture. A plasmon enhanced optical probe end cap has a socket with an entry aperture for an optical fiber and an exit aperture with a plasmon enhanced transmission structure. A positioning subsystem has a piezoelectric member that adjusts a length of the positioning subsystem, and a quadranted piezo device that adjusts a position of the positioning subsystem.

Abstract translation: 等离子体增强近场光学探针具有光学耦合器，其具有端面和形成至少一个等离子体激元增强结构的金属涂层。 扩展提供探针到样品分离反馈。 显微镜悬臂具有带有孔的杠杆臂，提供尖端到样品分离反馈的尖端和等离子体增强结构。 空气轴承滑块装置具有基座，空气轴承滑块和形成围绕孔的等离子体增强结构的金属膜。 等离子体增强型光学探针端盖具有带有用于光纤的入口孔的插座和具有等离子体增强传输结构的出口孔。 定位子系统具有调整定位子系统的长度的压电元件和调整定位子系统位置的四元压电器件。

公开(公告)号：US07949210B2

公开(公告)日：2011-05-24

申请号：US11869117

申请日：2007-10-09

Applicant: Charles G. Durfee ,  Reuben T. Collins ,  Thomas E. Furtak

Inventor： Charles G. Durfee ,  Reuben T. Collins ,  Thomas E. Furtak

IPC: G02F1/01 ,  G02F1/035 ,  G02F1/295 ,  G02B6/10

CPC classification number: G02F1/035 ,  G02F2203/10

Abstract: This invention provides fundamental science and novel device architectures for surface plasmon (SP)-based, complementary metal oxide semiconductor (CMOS)-compatible, optical elements such as modulators, couplers, and switches. The primary focus of the work is on waveguides based on an ultra-long-range surface plasmon (ULRSP) waveguide mode recently discovered by our team. This mode exists at the metal-dielectric interfaces in a silicon-oxide-metal-silicon layer structure. While initial work focuses on noble metals to support the ULRSP, our analysis shows Si processing-compatible metals such as Cu and Al can also be used. Our modeling has also shown that variation in the thickness of the oxide layer can be used to give unprecedented propagation lengths in such structures. Electrically-induced free carrier modulation of the dielectric constant in the Si adjacent to the oxide can modulate the waveguide properties allowing novel Si-compatible electro-optic devices to be created. These waveguides function as the “wiring” in new classes of optical chips. This invention also provides integration of ULRSP waveguides and switches with other optical elements to create entirely new classes of hybrid optoelectronic technologies for defense applications. These range from chip-based chemical agent detection to extremely high performance processors and even all-optical computations.

Abstract translation: 本发明为基于表面等离子体（SP）的互补金属氧化物半导体（CMOS）兼容的光学元件如调制器，耦合器和开关提供了基本的科学和新颖的器件结构。 该工作的主要重点是基于我们团队最近发现的超远距离表面等离子体（ULRSP）波导模式的波导。 该模式存在于氧化硅 - 金属 - 硅层结构中的金属 - 电介质界面处。 虽然初始工作侧重于贵金属以支持ULRSP，但我们的分析显示也可以使用Si加工兼容的金属如Cu和Al。 我们的建模还表明，氧化物层的厚度变化可用于在这种结构中产生前所未有的传播长度。 在与氧化物相邻的Si中的介电常数的电致自由载流子调制可以调节波导特性，从而可以产生新型的Si兼容的电光器件。 这些波导用作新类别的光学芯片中的“布线”。 本发明还提供ULRSP波导和开关与其他光学元件的集成，以创建用于防御应用的全新类型的混合光电子技术。 这些范围从基于芯片的化学试剂检测到极高性能处理器甚至全光学计算。

公开(公告)号：US4915482A

公开(公告)日：1990-04-10

申请号：US263743

申请日：1988-10-27

Applicant: Reuben T. Collins ,  John R. Kirtley ,  Thomas N. Theis

Inventor： Reuben T. Collins ,  John R. Kirtley ,  Thomas N. Theis

IPC: G02F1/015 ,  G02F1/017 ,  G02F1/17

CPC classification number: B82Y20/00 ,  G02F1/017 ,  G02F2001/0157 ,  G02F2203/10

Abstract: A method of modulating light incident to a semiconductor body comprising the steps of: coupling the incident light to the surface plasmon polariton mode at an interface of the semiconductor body; and selectively altering the absorption of the incident light by the semiconductor body so as to decouple the incident light from the surface plasmon polariton mode. The absorption can be selectively altered by establishing a quantum confined optical absorption region within the semiconductor body, and effecting a Stark shift of the quantum confined optical absorption region.

公开(公告)号：US20090052827A1

公开(公告)日：2009-02-26

申请号：US11869117

申请日：2007-10-09

Applicant: Charles G. Durfee ,  Reuben T. Collins ,  Thomas E. Furtak

Inventor： Charles G. Durfee ,  Reuben T. Collins ,  Thomas E. Furtak

IPC: G02F1/035

CPC classification number: G02F1/035 ,  G02F2203/10

Abstract: This invention provides fundamental science and novel device architectures for surface plasmon (SP)-based, complementary metal oxide semiconductor (CMOS)-compatible, optical elements such as modulators, couplers, and switches. The primary focus of the work is on waveguides based on an ultra-long-range surface plasmon (ULRSP) waveguide mode recently discovered by our team. This mode exists at the metal-dielectric interfaces in a silicon-oxide-metal-silicon layer structure. While initial work focuses on noble metals to support the ULRSP, our analysis shows Si processing-compatible metals such as Cu and Al can also be used. Our modeling has also shown that variation in the thickness of the oxide layer can be used to give unprecedented propagation lengths in such structures. Electrically-induced free carrier modulation of the dielectric constant in the Si adjacent to the oxide can modulate the waveguide properties allowing novel Si-compatible electro-optic devices to be created. These waveguides function as the “wiring” in new classes of optical chips. This invention also provides integration of ULRSP waveguides and switches with other optical elements to create entirely new classes of hybrid optoelectronic technologies for defense applications. These range from chip-based chemical agent detection to extremely high performance processors and even all-optical computations.

Abstract translation: 本发明为基于表面等离子体（SP）的互补金属氧化物半导体（CMOS）兼容的光学元件如调制器，耦合器和开关提供了基本的科学和新颖的器件结构。 该工作的主要重点是基于我们团队最近发现的超远距离表面等离子体（ULRSP）波导模式的波导。 该模式存在于氧化硅 - 金属 - 硅层结构中的金属 - 电介质界面处。 虽然初始工作侧重于贵金属以支持ULRSP，但我们的分析显示也可以使用Si加工兼容的金属如Cu和Al。 我们的建模还表明，氧化物层的厚度变化可用于在这种结构中产生前所未有的传播长度。 在与氧化物相邻的Si中的介电常数的电致自由载流子调制可以调节波导特性，从而可以产生新型的Si兼容的电光器件。 这些波导用作新类别的光学芯片中的“布线”。 本发明还提供ULRSP波导和开关与其他光学元件的集成，以创建用于防御应用的全新类型的混合光电子技术。 这些范围从基于芯片的化学试剂检测到极高性能处理器甚至全光学计算。