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1.发明申请IMPLEMENTING ENHANCED DATA PARTIAL-ERASE FOR MULTI-LEVEL CELL (MLC) MEMORY USING THRESHOLD VOLTAGE-DRIFT OR RESISTANCE DRIFT TOLERANT MOVING BASELINE MEMORY DATA ENCODING 有权使用阈值电压缓冲或电阻干扰实现增强数据部分删除多电平（MLC）存储器容错移动基线存储器数据编码公开(公告)号：US20130198436A1
公开(公告)日：2013-08-01
申请号：US13361925
申请日：2012-01-30
CPC分类号： G11C16/16 , G11C11/5635 , G11C11/5678 , G11C13/0035 , G11C13/0097 , G11C16/349 , G11C2013/0076
摘要： A method and apparatus are provided for implementing enhanced data partial erase for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, and a data re-write after the partial erase to the MLC memory is performed using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase cycle includes a duration and voltage level based upon a degradation of the MLC memory cells.
摘要翻译： 提供了一种使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码来实现用于多电平单元（MLC）存储器的增强型数据部分擦除的方法和装置。 执行使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码写入MLC存储器的数据的数据部分擦除，并且使用阈值电压来执行对MLC存储器的部分擦除之后的数据重写 驱动或电阻漂移运动基线存储器数据编码。 数据部分擦除周期包括基于MLC存储器单元的劣化的持续时间和电压电平。
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2.发明授权Implementing enhanced data partial-erase for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding 有权使用阈值电压漂移或电阻漂移容限运动基线存储器数据编码来实现多电平单元（MLC）存储器的增强型数据部分擦除公开(公告)号：US08792272B2
公开(公告)日：2014-07-29
申请号：US13361925
申请日：2012-01-30
CPC分类号： G11C16/16 , G11C11/5635 , G11C11/5678 , G11C13/0035 , G11C13/0097 , G11C16/349 , G11C2013/0076
摘要： A method and apparatus are provided for implementing enhanced data partial erase for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, and a data re-write after the partial erase to the MLC memory is performed using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase cycle includes a duration and voltage level based upon a degradation of the MLC memory cells.
摘要翻译： 提供了一种使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码来实现用于多电平单元（MLC）存储器的增强型数据部分擦除的方法和装置。 执行使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码写入MLC存储器的数据的数据部分擦除，并且使用阈值电压来执行对MLC存储器的部分擦除之后的数据重写 驱动或电阻漂移运动基线存储器数据编码。 数据部分擦除周期包括基于MLC存储器单元的劣化的持续时间和电压电平。
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3.发明授权Implementing enhanced data write for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding 有权使用阈值电压漂移或电阻漂移容限移动基线存储器数据编码来实现对多电平单元（MLC）存储器的增强型数据写入公开(公告)号：US08699266B2
公开(公告)日：2014-04-15
申请号：US13361905
申请日：2012-01-30
IPC分类号： G11C11/00
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5678 , G11C13/0035 , G11C13/0069 , G11C16/3418 , G11C16/349 , G11C17/146 , G11C2013/0076
摘要： A method and apparatus are provided for implementing enhanced performance for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A voltage baseline of a prior write is identified, and a data write uses the threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding for data being written to the MLC memory responsive to the identified voltage baseline.
摘要翻译： 提供了一种使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码来实现多电平单元（MLC）存储器的增强性能的方法和装置。 识别先前写入的电压基线，并且数据写入使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码，以响应于所识别的电压基线而写入到MLC存储器中的数据。
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4.发明授权Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding 有权使用阈值电压漂移或电阻漂移容限移动基线存储器数据编码来实现对多电平单元（MLC）存储器的增强型数据读取公开(公告)号：US09208871B2
公开(公告)日：2015-12-08
申请号：US13361918
申请日：2012-01-30
CPC分类号： G11C13/0035 , G11C11/5628 , G11C11/5642 , G11C11/5678 , G11C13/004 , G11C16/26 , G11C16/349 , G11C2013/0054
摘要： A method and apparatus are provided for implementing enhanced data read for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data read back for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, higher voltage and lower voltage levels are compared, and respective data values are identified responsive to the compared higher voltage and lower voltage levels.
摘要翻译： 提供了一种用于使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码来实现用于多电平单元（MLC）存储器的增强数据读取的方法和装置。 执行使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码写入MLC存储器的数据的数据读回，比较较高电压和较低电压电平，并且响应于比较的较高电压 电压和低电压电平。
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5.发明申请IMPLEMENTING ENHANCED DATA READ FOR MULTI-LEVEL CELL (MLC) MEMORY USING THRESHOLD VOLTAGE-DRIFT OR RESISTANCE DRIFT TOLERANT MOVING BASELINE MEMORY DATA ENCODING 有权使用阈值电压缓冲或电阻干扰实现增强型数据读取多级存储器（MLC）存储器容错移动基线存储器数据编码公开(公告)号：US20130194865A1
公开(公告)日：2013-08-01
申请号：US13361918
申请日：2012-01-30
CPC分类号： G11C13/0035 , G11C11/5628 , G11C11/5642 , G11C11/5678 , G11C13/004 , G11C16/26 , G11C16/349 , G11C2013/0054
摘要： A method and apparatus are provided for implementing enhanced data read for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data read back for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, higher voltage and lower voltage levels are compared, and respective data values are identified responsive to the compared higher voltage and lower voltage levels.
摘要翻译： 提供了一种用于使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码来实现用于多电平单元（MLC）存储器的增强数据读取的方法和装置。 执行使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码写入MLC存储器的数据的数据读回，比较较高电压和较低电压电平，并且响应于比较的较高电压 电压和低电压电平。
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6.发明授权Shingled magnetic recording disk drive with minimization of the effect of far track erasure on adjacent data bands 有权具有最小化远距离擦除对相邻数据带的影响的嵌入式磁记录磁盘驱动器公开(公告)号：US08537481B1
公开(公告)日：2013-09-17
申请号：US13423177
申请日：2012-03-17
申请人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Eugeniu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
发明人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Eugeniu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
IPC分类号： G11B27/36
CPC分类号： G11B27/36 , G11B5/012 , G11B20/1258 , G11B20/1816 , G11B2020/10898 , G11B2020/1298
摘要： A shingled magnetic recording (SMR) hard disk drive (HDD) essentially eliminates the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing in the boundary regions of adjacent annular data bands. The extent of the FTE effect is determined for each track within a range of tracks of the track being written. Based on the relative FTE effect for all the tracks in the range, a count increment (CI) table or a cumulative count increment (CCI) table is maintained for all the tracks in the range. For every writing to a track in a boundary region, a count for each track in an adjacent boundary region, or a cumulative count for the adjacent boundary region, is increased. When the count reaches a predetermined threshold the data is read from that band and rewritten to the same band.
摘要翻译： 磁带录音（SMR）硬盘驱动器（HDD）基本上消除了在相邻环形数据频带的边界区域中写入引起的环形数据频带的边界区域中的远跟踪擦除（FTE）的影响。 对正在写入的轨道的轨道范围内的每个轨道确定FTE效果的程度。 基于该范围内所有轨道的相对FTE效应，对该范围内的所有轨道维持计数增量（CI）表或累积计数增量（CCI）表。 对于对边界区域中的轨迹的每次写入，相邻边界区域中的每个轨道的计数或相邻边界区域的累积计数增加。 当计数达到预定阈值时，从该频带读取数据并重写到相同的频带。
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7.发明授权Shingled magnetic recording disk drive with inter-band disk cache and minimization of the effect of far track erasure on adjacent data bands 有权带磁带磁记录磁盘驱动器，具有带间磁盘缓存，并将对远程磁道擦除对相邻数据带的影响降至最低公开(公告)号：US08793431B2
公开(公告)日：2014-07-29
申请号：US13423178
申请日：2012-03-17
申请人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Eugeniu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
发明人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Eugeniu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
IPC分类号： G06F12/00
CPC分类号： G11B20/10527 , G06F12/0866 , G06F2212/313 , G11B5/012 , G11B20/10388 , G11B20/1879
摘要： A shingled magnetic recording hard disk drive that uses writeable cache tracks in the inter-band gaps between the annular data bands minimizes the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing to the cache tracks. Based on the relative FTE effect for all the tracks in a range of tracks of the cache track being written, a count increment (CI) table or a cumulative count increment (CCI) table is maintained. For every writing to a cache track, a count for each track in an adjacent boundary region, or a cumulative count for each adjacent boundary region, is increased. When the count value for a track, or the cumulative count for a boundary region, reaches a predetermined threshold the data is read from that band and rewritten to the same band.
摘要翻译： 在环形数据带之间的带间间隙中使用可写入高速缓存轨迹的带状磁记录硬盘驱动器将通过写入高速缓存轨道引起的环形数据带的边界区域中的远轨擦除（FTE）的影响最小化。 基于正在写入的高速缓存磁道的磁道范围内的所有磁道的相对FTE效应，保持计数增量（CI）表或累积计数增量（CCI）表。 对于对高速缓存轨道的每次写入，相邻边界区域中的每个轨道的计数或每个相邻边界区域的累积计数增加。 当轨道的计数值或边界区域的累积计数达到预定阈值时，从该频带读取数据并重写到相同的频带。
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8.发明申请SHINGLED MAGNETIC RECORDING DISK DRIVE WITH MINIMIZATION OF THE EFFECT OF FAR TRACK ERASURE ON ADJACENT DATA BANDS 有权最小化跟踪擦除对相邻数据库的影响的摇摆磁记录盘驱动器公开(公告)号：US20130242426A1
公开(公告)日：2013-09-19
申请号：US13423177
申请日：2012-03-17
申请人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Eugeniu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
发明人： Zvonimir Z. Bandic , Cyril Guyot , Tomohiro Harayama , Robert Eugeniu Mateescu , Shad Henry Thorstenson , Timothy Kohchih Tsai
IPC分类号： G11B27/36
CPC分类号： G11B27/36 , G11B5/012 , G11B20/1258 , G11B20/1816 , G11B2020/10898 , G11B2020/1298
摘要： A shingled magnetic recording (SMR) hard disk drive (HDD) essentially eliminates the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing in the boundary regions of adjacent annular data bands. The extent of the FTE effect is determined for each track within a range of tracks of the track being written. Based on the relative FTE effect for all the tracks in the range, a count increment (CI) table or a cumulative count increment (CCI) table is maintained for all the tracks in the range. For every writing to a track in a boundary region, a count for each track in an adjacent boundary region, or a cumulative count for the adjacent boundary region, is increased. When the count reaches a predetermined threshold the data is read from that band and rewritten to the same band.
摘要翻译： 磁带录音（SMR）硬盘驱动器（HDD）基本上消除了在相邻环形数据频带的边界区域中写入引起的环形数据频带的边界区域中的远跟踪擦除（FTE）的影响。 对正在写入的轨道的轨道范围内的每个轨道确定FTE效果的程度。 基于该范围内所有轨道的相对FTE效应，对该范围内的所有轨道维持计数增量（CI）表或累积计数增量（CCI）表。 对于对边界区域中的轨迹的每次写入，相邻边界区域中的每个轨道的计数或相邻边界区域的累积计数增加。 当计数达到预定阈值时，从该频带读取数据并重写到相同的频带。
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9.发明申请IMPLEMENTING ENHANCED DATA WRITE FOR MULTI-LEVEL CELL (MLC) MEMORY USING THRESHOLD VOLTAGE-DRIFT OR RESISTANCE DRIFT TOLERANT MOVING BASELINE MEMORY DATA ENCODING 有权使用阈值电压缓冲或电阻干扰来实现多电平（MLC）存储器的增强数据写入容错移动基线存储器数据编码公开(公告)号：US20130194864A1
公开(公告)日：2013-08-01
申请号：US13361905
申请日：2012-01-30
IPC分类号： G11C16/10
CPC分类号： G11C16/0483 , G11C11/5628 , G11C11/5678 , G11C13/0035 , G11C13/0069 , G11C16/3418 , G11C16/349 , G11C17/146 , G11C2013/0076
摘要： A method and apparatus are provided for implementing enhanced performance for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A voltage baseline of a prior write is identified, and a data write uses the threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding for data being written to the MLC memory responsive to the identified voltage baseline.
摘要翻译： 提供了一种使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码来实现多电平单元（MLC）存储器的增强性能的方法和装置。 识别先前写入的电压基线，并且数据写入使用阈值电压漂移或电阻漂移容许移动基线存储器数据编码，以响应于所识别的电压基线而写入到MLC存储器中的数据。
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