公开(公告)号：US20060124349A1

公开(公告)日：2006-06-15

申请号：US10540464

申请日：2003-12-24

申请人： Hiroyuki Fujimura ,  Roberto Serikawa ,  Naoki Ishikawa ,  Takahiro Mishima

发明人： Hiroyuki Fujimura ,  Roberto Serikawa ,  Naoki Ishikawa ,  Takahiro Mishima

IPC分类号： H05K1/09

CPC分类号： C30B25/18 ,  C23C16/27 ,  C23C16/545 ,  C30B25/02 ,  C30B29/04 ,  Y10T428/30

摘要： The present invention intends to provide an industrially applicable diamond electrode and a diamond-coated silicon used in the electrode. A silicon substrate having a thickness of 500 μm or less, at least partially coated with electrically conductive diamond is used as a diamond-coated silicon. In addition, an electrically conductive support substrate and the diamond-coated silicon is used as an electrode. The diamond-coated silicon is flexible and it can be adhered to the electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be easily obtained.

摘要翻译： 本发明旨在提供一种工业上应用的金刚石电极和在电极中使用的金刚石涂层的硅。 使用至少部分涂覆有导电金刚石的厚度为500μm或更小的硅衬底作为金刚石涂覆的硅。 此外，使用导电支撑基板和金刚石涂覆的硅作为电极。 金刚石涂覆的硅是柔性的并且可以粘附到导电支撑衬底上，从而可以容易地获得大面积电极和三维电极结构。

公开(公告)号：US20060216514A1

公开(公告)日：2006-09-28

申请号：US10540640

申请日：2003-12-24

申请人： Hiroyuki Fujimura ,  Roberto Serikawa ,  Naoki Ishikawa ,  Takahiro Mishima

发明人： Hiroyuki Fujimura ,  Roberto Serikawa ,  Naoki Ishikawa ,  Takahiro Mishima

IPC分类号： C23C16/00 ,  B32B9/00 ,  B32B13/04

CPC分类号： C30B25/18 ,  C23C16/27 ,  C23C16/545 ,  C30B25/02 ,  C30B29/04 ,  Y10T428/30

摘要： The present invention intends to provide a diamond-coated silicon to be used in an industrially applicable diamond electrode. A diamond-coated silicon comprising a silicon substrate having a thickness of 500 μm or less is coated at least partially with electrically conductive diamond. The silicon substrate having a thickness of 500 μm or less is manufactured by the plate-like crystal growth process, and then the silicon substrate is coated with the electrically conductive diamond by the chemical vapor deposition process to manufacture the diamond-coated silicon. The diamond-coated silicon is flexible and can be stuck to an electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be readily obtained.

摘要翻译： 本发明旨在提供用于工业上应用的金刚石电极中的金刚石涂层的硅。 包含厚度为500μm或更小的硅衬底的金刚石涂覆的硅至少部分地涂覆有导电金刚石。 通过板状晶体生长工艺制造厚度为500μm或更小的硅衬底，然后通过化学气相沉积工艺用导电金刚石涂覆硅衬底，以制造金刚石涂覆的硅。 金刚石涂覆的硅是柔性的并且可以粘附到导电支撑衬底上，从而可以容易地获得大面积电极和三维电极结构。

公开(公告)号：US20060144711A1

公开(公告)日：2006-07-06

申请号：US10534232

申请日：2003-07-18

申请人： Itsuki Kobata ,  Masayuki Kumekawa ,  Osamu Nabeya ,  Roberto Serikawa ,  Takayuki Saito ,  Tsukuru Suzuki ,  Akira Kodera ,  Hozumi Yasuda ,  Takeshi Iizumi ,  Mitsuhiko Shirakashi

发明人： Itsuki Kobata ,  Masayuki Kumekawa ,  Osamu Nabeya ,  Roberto Serikawa ,  Takayuki Saito ,  Tsukuru Suzuki ,  Akira Kodera ,  Hozumi Yasuda ,  Takeshi Iizumi ,  Mitsuhiko Shirakashi

IPC分类号： B23H7/20

CPC分类号： B23H3/02 ,  B23H5/08 ,  B23H9/00

摘要： A object of this invention is to provide an electrolytic processing method and apparatus that can suppress a change in the electric conductivity of a fluid due to contaminants, such as processing products produced in electrolytic processing, so that the fluid can maintain good flattening properties. The electrolytic processing apparatus of this invention includes: a processing electrode (42) that can come into contact with a workpiece (W); a feeding electrode (44) for feeding electricity to the workpiece (W); a holder (22) for holding the workpiece (W); a power source (26) for applying a voltage between the processing electrode (42) and the feeding electrode (44); a fluid supply section (50) for supplying a fluid between the workpiece (W) and at least one of the processing electrode (42) and the feeding electrode (44); a sensor (80) for measuring the electric conductivity of the fluid; and a control section (84) for changing the processing conditions based on the electric conductivity measured by the sensor (80).

摘要翻译： 本发明的目的是提供一种电解处理方法和装置，其可以抑制由电解处理中产生的加工产品等污染物引起的流体的导电性变化，使得流体能够保持良好的平坦化性能。 本发明的电解处理装置包括：可与工件（W）接触的处理电极（42）; 用于向工件（W）供电的供电电极（44）; 用于保持工件（W）的保持器（22）; 用于在处理电极（42）和馈电电极（44）之间施加电压的电源（26）; 用于在工件（W）和处理电极（42）和馈电电极（44）中的至少一个之间供应流体的流体供应部分（50）; 用于测量流体的电导率的传感器（80）; 以及用于根据由传感器（80）测量的电导率来改变处理条件的控制部分（84）。

公开(公告)号：US06495110B1

公开(公告)日：2002-12-17

申请号：US09403501

申请日：1999-10-22

申请人： Tsutomu Higo ,  Massahiro Roberto Serikawa

发明人： Tsutomu Higo ,  Massahiro Roberto Serikawa

IPC分类号： F28D700

CPC分类号： B01J3/008 ,  B01J3/006 ,  B01J3/042 ,  B01J19/20 ,  B01J19/243 ,  B01J2219/00006 ,  B01J2219/00049 ,  B01J2219/00058 ,  B01J2219/00094 ,  B01J2219/00159 ,  B01J2219/00162 ,  B01J2219/00164 ,  B01J2219/187 ,  Y02P20/544

摘要： A method and apparatus for processing substances by coexisting an object matter with water held at temperature above 200° C. to carry out chemical reactions such as severing of molecular chains, recombination and decoupling occluded molecules, oxidation and reduction reactions. A mixture phase containing an object matter and a liquid medium is subjected to a super-critical state of a medium in a super-critical reaction apparatus, where feed inlets are provided on the upper end, and a product outlet is provided on the lower end. In the interior of the apparatus, the super-critical zone is provided above and the sub-critical zone is provided below, and the object matter and the reaction products are progressed towards a lower end of a reaction chamber in one direction.

摘要翻译： 通过将物体与保持在高于200℃的温度保持在一起的物质来进行物质的处理的方法和装置，以进行化学反应，例如切断分子链，重组和解耦闭塞的分子，氧化和还原反应。 含有物体和液体介质的混合相在超临界反应装置中经受介质的超临界状态，其中在上端设置有进料口，在下端设置有产物出口 。 在设备的内部，设置超临界区，并且在下方提供亚临界区，物体和反应产物沿着一个方向前进到反应室的下端。