公开(公告)号：US08845396B2

公开(公告)日：2014-09-30

申请号：US13304931

申请日：2011-11-28

申请人： Osamu Nabeya ,  Tetsuji Togawa ,  Makoto Fukushima ,  Hozumi Yasuda

发明人： Osamu Nabeya ,  Tetsuji Togawa ,  Makoto Fukushima ,  Hozumi Yasuda

IPC分类号： B24B7/04

CPC分类号： B24B37/20 ,  B24B37/005 ,  B24B37/10 ,  B24B37/105 ,  B24B37/30 ,  B24B37/32 ,  B24B47/22 ,  B24B49/00 ,  B24B49/16

摘要： A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

摘要翻译： 抛光装置具有抛光垫，用于保持半导体晶片的顶环，以及可操作以在垂直方向上移动顶环的垂直移动机构。 抛光装置还具有距离测量传感器，该距离测量传感器可操作以当顶环的下表面与抛光垫接触时检测顶环的位置，以及控制器，其可操作以计算顶环的最佳位置进行抛光 基于由距离测量传感器检测到的位置的半导体晶片。 垂直移动机构包括可操作以将顶环移动到最佳位置的滚珠丝杠机构。

公开(公告)号：US08430716B2

公开(公告)日：2013-04-30

申请号：US12320471

申请日：2009-01-27

申请人： Makoto Fukushima ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Osamu Nabeya ,  Shingo Saito

发明人： Makoto Fukushima ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Osamu Nabeya ,  Shingo Saito

IPC分类号： B24B7/22

CPC分类号： B24B37/345

摘要： A polishing method can safely detach and lift up a workpiece from a polishing surface without carrying out the operation of making the workpiece overhang the polishing surface. The polishing method includes carrying out processing of a surface to be polished of a workpiece by supplying a liquid to a polishing surface while pressing the surface to be polished of the workpiece held by a holding device against the polishing surface and moving the workpiece and the polishing surface relative to each other, attracting the workpiece after the processing to the holding device while supplying the liquid to the polishing surface at a decreased flow rate, thereby detaching the workpiece from the polishing surface, and lifting up the holding device together with the workpiece on confirmation of detachment of the workpiece from the polishing surface and attachment of the workpiece to the holding device.

公开(公告)号：US20120309277A1

公开(公告)日：2012-12-06

申请号：US13587371

申请日：2012-08-16

申请人： Hozumi YASUDA ,  Tetsuji Togawa ,  Osamu Nabeya ,  Kenichiro Saito ,  Makoto Fukushima ,  Tomoshi Inoue

发明人： Hozumi YASUDA ,  Tetsuji Togawa ,  Osamu Nabeya ,  Kenichiro Saito ,  Makoto Fukushima ,  Tomoshi Inoue

IPC分类号： B24B41/06

CPC分类号： B24B37/32

摘要： A substrate holding apparatus prevents a substrate from slipping out and allows the substrate to be polished stably. The substrate holding apparatus has a top ring body for holding and pressing a substrate against a polishing surface, and a retainer ring for pressing the polishing surface, the retainer ring being disposed on an outer circumferential portion of the top ring body. The retainer ring includes a first member made of a magnetic material and a second member having a magnet disposed on a surface thereof which is held in abutment against the first member.

摘要翻译： 基板保持装置防止基板滑出并允许基板被稳定地抛光。 基板保持装置具有用于将基板保持并压靠在研磨面上的顶环体，以及用于按压研磨面的保持环，保持环设置在顶环体的外周部。 保持环包括由磁性材料制成的第一构件和具有设置在其表面上的磁体的第二构件，该磁体保持抵靠第一构件。

公开(公告)号：US20100273405A1

公开(公告)日：2010-10-28

申请号：US12747225

申请日：2009-02-09

申请人： Makoto Fukushima ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Koji Saito ,  Osamu Nabeya ,  Tomoshi Inoue

发明人： Makoto Fukushima ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Koji Saito ,  Osamu Nabeya ,  Tomoshi Inoue

IPC分类号： B24B7/20 ,  B24B41/06 ,  B24B55/02

CPC分类号： B24B37/30

摘要： A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.

摘要翻译： 抛光装置用于将半导体晶片等基板研磨成平面镜面。 抛光装置包括具有抛光面（101a）的抛光台（100），被配置为将基板保持并压靠在抛光表面（101a）上的顶环体（2），以及设置在抛光表面 所述顶环体（2）的外周部分构造成按压所述抛光表面（101a）。 用于在衬底抛光期间接收从衬底施加到保持环（3）的侧向力的支点位于衬底的中心部分的上方。

公开(公告)号：US07578920B2

公开(公告)日：2009-08-25

申请号：US10948320

申请日：2004-09-24

申请人： Ikutaro Noji ,  Hozumi Yasuda ,  Takeshi Iizumi ,  Kazuto Hirokawa ,  Itsuki Kobata

发明人： Ikutaro Noji ,  Hozumi Yasuda ,  Takeshi Iizumi ,  Kazuto Hirokawa ,  Itsuki Kobata

IPC分类号： C25D21/12 ,  C25F3/02

CPC分类号： C25F7/00

摘要： An electrolytic processing apparatus can detect the end point of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus includes: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss. The sensor is disposed not in contact with (or separately) by an insulator from the processing electrode and/or the feeding electrode.

摘要翻译： 电解处理装置可以以高精度和相对简单的结构稳定地检测电解处理的终点。 电解处理装置包括：处理电极，其能够接近或与处理对象接触; 用于向处理对象供电的馈电电极; 流体供应部分，用于在处理对象与处理电极和馈送电极中的至少一个之间提供流体; 用于在处理电极和馈电电极之间施加电压的处理电源; 驱动部，其用于使处理对象与所述处理电极和所述馈送电极中的至少一个相对移动; 以及用于从涡流损耗的变化中检测加工对象的厚度的涡流传感器。 传感器设置成不与来自处理电极和/或馈电电极的绝缘体接触（或单独地）接触。

公开(公告)号：US07569135B2

公开(公告)日：2009-08-04

申请号：US11723934

申请日：2007-03-22

申请人： Mitsuhiko Shirakashi ,  Masayuki Kumekawa ,  Hozumi Yasuda ,  Itsuki Kobata ,  Ikutaro Noji ,  Kaori Yoshida

发明人： Mitsuhiko Shirakashi ,  Masayuki Kumekawa ,  Hozumi Yasuda ,  Itsuki Kobata ,  Ikutaro Noji ,  Kaori Yoshida

IPC分类号： C25F3/16 ,  B23H5/06

CPC分类号： C25F7/00 ,  B23H3/00 ,  B23H3/04 ,  B23H3/08 ,  B23H5/08 ,  B24B37/04 ,  C25F3/00 ,  C25F5/00 ,  H01L21/32115 ,  H01L21/3212

摘要： The present invention replaces all or a portion of substrate processing by chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like. An electrolytic processing apparatus comprises: a chemical-mechanical polishing section for chemically-mechanically polishing a surface of a substrate; an electrolytic processing section having a processing electrode and a feeding electrode, and also having an ion exchanger provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode, for electrolytically processing a surface of a workpiece under existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring capable of freely moving between the chemical-mechanical polishing section and the processing electrode section.

摘要翻译： 本发明通过使用去离子水，超纯水等的电解处理通过化学机械抛光来代替基板处理的全部或一部分。 电解处理设备包括：化学机械抛光部分，用于对基材的表面进行化学机械抛光; 具有处理电极和供电电极的电解处理部分，并且还具有设置在基板和处理电极之间或者基板和供电电极之间的至少一个的离子交换器，用于在存在的工件的表面进行电解处理 通过在处理电极和馈电电极之间施加电压的解决方案; 以及能够在所述化学机械抛光部和所述处理电极部之间自由移动的顶环。

公开(公告)号：US20090191797A1

公开(公告)日：2009-07-30

申请号：US12379597

申请日：2009-02-25

申请人： Osamu NABEYA ,  Tetsuji TOGAWA ,  Makoto FUKUSHIMA ,  Hozumi YASUDA

发明人： Osamu NABEYA ,  Tetsuji TOGAWA ,  Makoto FUKUSHIMA ,  Hozumi YASUDA

IPC分类号： B24B1/00 ,  B24B41/06 ,  B24B7/22

CPC分类号： B24B37/20 ,  B24B37/005 ,  B24B37/042 ,  B24B37/10 ,  B24B37/105 ,  B24B37/30 ,  B24B37/32 ,  B24B47/22 ,  B24B49/00 ,  B24B49/16 ,  B24B49/18 ,  B24B49/183

摘要： A polishing apparatus (1) has a polishing pad (22), a top ring (20) for holding a semiconductor wafer (W), a vertical movement mechanism (24) operable to move the top ring (20) in a vertical direction, a distance measuring sensor (46) operable to detect a position of the top ring (20) when a lower surface of the top ring (20) is brought into contact with the polishing pad (22), and a controller (47) operable to calculate an optimal position of the top ring (20) to polish the semiconductor wafer (W) based on the position detected by the distance measuring sensor (46). The vertical movement mechanism (24) includes a ball screw mechanism (30, 32, 38, 42) operable to move the top ring (20) to the optimal position.

摘要翻译： 抛光装置（1）具有抛光垫（22），用于保持半导体晶片（W）的顶环（20），可垂直移动顶环（20）的垂直移动机构（24） 当所述顶环（20）的下表面与所述抛光垫（22）接触时，所述距离测量传感器（46）可操作以检测所述顶环（20）的位置;以及控制器（47），其可操作以 基于由距离测量传感器（46）检测到的位置，计算顶环（20）的最佳位置以对半导体晶片（W）进行抛光。 垂直运动机构（24）包括可操作以将顶环（20）移动到最佳位置的滚珠丝杆机构（30,32,38,42）。

公开(公告)号：US20090111362A1

公开(公告)日：2009-04-30

申请号：US12285941

申请日：2008-10-16

申请人： Osamu Nabeya ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Koji Saito ,  Makoto Fukushima

发明人： Osamu Nabeya ,  Tetsuji Togawa ,  Hozumi Yasuda ,  Koji Saito ,  Makoto Fukushima

IPC分类号： B24B7/00

CPC分类号： B24B37/32

摘要： A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a top ring body configured to hold and press a substrate against the polishing surface, a retainer ring provided at an outer peripheral portion of the top ring body and configured to press the polishing surface, and a retainer ring guide fixed to the top ring body and configured to be brought into sliding contact with a ring member of the retainer ring to guide a movement of said ring member. Either one of sliding contact surfaces of the ring member and the retainer ring guide which are brought into sliding contact with each other comprises a low friction material.

摘要翻译： 抛光装置用于将半导体晶片等基板研磨成平面镜面。 抛光装置包括具有研磨面的研磨台，配置为将基板保持并压靠在研磨面上的顶环体，设置在顶环体的外周部并构造成按压抛光面的保持环， 以及保持环导向件，其固定到所述顶环主体并且被构造成与所述保持环的环形构件滑动接触以引导所述环构件的运动。 彼此滑动接触的环构件和保持器环导向件的滑动接触表面中的任一个包括低摩擦材料。

公开(公告)号：US07476303B2

公开(公告)日：2009-01-13

申请号：US10914190

申请日：2004-08-10

申请人： Hozumi Yasuda ,  Ikutaro Noji ,  Kazuto Hirokawa ,  Takeshi Iizumi ,  Itsuki Kobata

发明人： Hozumi Yasuda ,  Ikutaro Noji ,  Kazuto Hirokawa ,  Takeshi Iizumi ,  Itsuki Kobata

IPC分类号： C25F3/16 ,  B23H5/06 ,  B23H5/10 ,  B23H5/14

CPC分类号： C25F7/02

摘要： There are provided an electrolytic processing apparatus and an electrolytic processing method which can regenerate an ion exchanger with an enhanced regeneration rate of ion-exchange capacity without adversely affecting the throughput of the apparatus. The electrolytic processing apparatus includes: a holder for holding a workpiece; an electrode section including an electrode, a contact member, and a discharge portion for discharging metal ions which have been taken from the workpiece into the contact member during processing, said electrode section coming close to or into contact with the workpiece held by the holder to effect processing of the workpiece in the presence of a liquid; and a regeneration dummy electrode which can come close to or into contact with the contact member.

摘要翻译： 提供一种电解处理装置和电解处理方法，其可以以提高的离子交换容量的再生速率再生离子交换器，而不会不利地影响装置的生产量。 电解处理装置包括：用于保持工件的保持器; 电极部分，包括电极，接触部件和用于在处理期间从工件中取出的金属离子放电到接触部件中的放电部分，所述电极部分靠近或与保持件保持的工件接触或接触 在液体存在下对工件进行加工; 以及能够靠近或与接触构件接触的再生虚拟电极。

公开(公告)号：US20070181432A1

公开(公告)日：2007-08-09

申请号：US11723934

申请日：2007-03-22

申请人： Mitsuhiko Shirakashi ,  Masayuki Kumekawa ,  Hozumi Yasuda ,  Itsuki Kobata ,  Ikutaro Noji ,  Kaori Yoshida

发明人： Mitsuhiko Shirakashi ,  Masayuki Kumekawa ,  Hozumi Yasuda ,  Itsuki Kobata ,  Ikutaro Noji ,  Kaori Yoshida

IPC分类号： C25D5/10

CPC分类号： C25F7/00 ,  B23H3/00 ,  B23H3/04 ,  B23H3/08 ,  B23H5/08 ,  B24B37/04 ,  C25F3/00 ,  C25F5/00 ,  H01L21/32115 ,  H01L21/3212

摘要： The present invention replaces all or a portion of substrate processing by chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like. An electrolytic processing apparatus comprises: a chemical-mechanical polishing section for chemically-mechanically polishing a surface of a substrate; an electrolytic processing section having a processing electrode and a feeding electrode, and also having an ion exchanger provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode, for electrolytically processing a surface of a workpiece under existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring capable of freely moving between the chemical-mechanical polishing section and the processing electrode section.

摘要翻译： 本发明通过使用去离子水，超纯水等的电解处理通过化学机械抛光来代替基板处理的全部或一部分。 电解处理设备包括：化学机械抛光部分，用于对基材的表面进行化学机械抛光; 具有处理电极和供电电极的电解处理部分，并且还具有设置在基板和处理电极之间或基板与供电电极之间的至少一个的离子交换器，用于在存在的工件的表面上电解处理 通过在处理电极和馈电电极之间施加电压的解决方案; 以及能够在所述化学机械抛光部和所述处理电极部之间自由移动的顶环。