DETERMINING AZIMUTH ANGLE OF INCIDENT BEAM TO WAFER
    2.
    发明申请
    DETERMINING AZIMUTH ANGLE OF INCIDENT BEAM TO WAFER 失效
    确定入射光束的AZIMUTH角

    公开(公告)号:US20080316471A1

    公开(公告)日:2008-12-25

    申请号:US11766820

    申请日:2007-06-22

    IPC分类号: G01B11/26

    CPC分类号: G01B11/26

    摘要: A method, system and computer program product for determining an Azimuth angle of an incident beam to a wafer are disclosed. A method comprises: using the incident beam to make a first set of measurements of calibration targets of a first set of grating angles that are different than one another; analyzing the first set of measurements to determine an reference grating angle which corresponds to a grating line to which the incident beam has a practically zero Azimuth angle; and determining the Azimuth angle of the incident beam to the wafer using the determined reference grating angle.

    摘要翻译: 公开了一种用于确定入射光束到晶片的方位角的方法,系统和计算机程序产品。 一种方法包括:使用入射光束对彼此不同的第一组光栅角进行校准目标的第一组测量; 分析第一组测量以确定对应于入射光束具有实际上零方位角的光栅线的参考光栅角度; 以及使用所确定的参考光栅角度确定入射光束到晶片的方位角。

    Optical spot geometric parameter determination using calibration targets
    3.
    发明申请
    Optical spot geometric parameter determination using calibration targets 失效
    使用校准目标的光点几何参数确定

    公开(公告)号:US20080024781A1

    公开(公告)日:2008-01-31

    申请号:US11828666

    申请日:2007-07-26

    IPC分类号: G01B9/08

    CPC分类号: G03F7/70516

    摘要: A method, system and computer program product for determining a geometric parameter of an optical spot of a light beam are disclosed. A method comprises: providing a calibration target, the calibration target including a systematic variation in a parameter; measuring the calibration target with respect to the systematic variation using the light beam to obtain a plurality of measurements; and analyzing the measurements and the systematic variation to determine the geometric parameter of the optical spot.

    摘要翻译: 公开了一种用于确定光束的光点的几何参数的方法,系统和计算机程序产品。 一种方法包括:提供校准目标,所述校准目标包括参数中的系统变化; 使用光束测量相对于系统变化的校准目标以获得多个测量值; 并分析测量和系统变化,以确定光点的几何参数。

    DETERMINING ANGLE OF INCIDENCE WITH RESPECT TO WORKPIECE
    4.
    发明申请
    DETERMINING ANGLE OF INCIDENCE WITH RESPECT TO WORKPIECE 失效
    确定与工作有关的角度

    公开(公告)号:US20090180108A1

    公开(公告)日:2009-07-16

    申请号:US12014408

    申请日:2008-01-15

    IPC分类号: G01C1/00

    CPC分类号: G01B11/26

    摘要: A method, system and computer program product for determining an angle of incidence of a light beam illuminating a workpiece positioned on a stage are disclosed. A method for determining an angle of incidence of a light beam illuminating a workpiece positioned on a stage may include: positioning a calibration target on the stage with multiple different tilts; first determining an angle of incident of the light beam with respect to the calibration target with each tilt using a detector; mapping a response of the detector to a determined angle of incidence; and second determining the angle of incidence with respect to the workpiece based on a result of the mapping.

    摘要翻译: 公开了一种用于确定照射位于台架上的工件的光束的入射角的方法,系统和计算机程序产品。 用于确定照射位于台架上的工件的光束的入射角的方法可以包括:将校准目标放置在具有多个不同倾斜的平台上; 首先使用检测器确定每个倾斜的光束相对于校准目标的入射角; 将检测器的响应映射到确定的入射角; 并且基于所述映射的结果,第二确定相对于所述工件的入射角。

    Piezo-actuated CMP carrier
    6.
    发明授权
    Piezo-actuated CMP carrier 失效
    压电式CMP载体

    公开(公告)号:US06325696B1

    公开(公告)日:2001-12-04

    申请号:US09395393

    申请日:1999-09-13

    IPC分类号: B24B4900

    摘要: A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.

    摘要翻译: 化学机械抛光(CMP)控制系统控制正在抛光的半导体晶片背面的压力分布。 该系统包括具有用于支撑半导体晶片的载体的CMP装置。 载体包括多个双功能压电致动器。 致动器感测半导体晶片上的压力变化,并且可以单独控制。 控制器连接到致动器,用于监测感测的压力变化并控制致动器以提供横跨半导体晶片的受控压力分布。

    Determining angle of incidence with respect to workpiece
    8.
    发明授权
    Determining angle of incidence with respect to workpiece 失效
    确定相对于工件的入射角

    公开(公告)号:US07742160B2

    公开(公告)日:2010-06-22

    申请号:US12014408

    申请日:2008-01-15

    IPC分类号: G01B11/26

    CPC分类号: G01B11/26

    摘要: A method, system and computer program product for determining an angle of incidence of a light beam illuminating a workpiece positioned on a stage are disclosed. A method for determining an angle of incidence of a light beam illuminating a workpiece positioned on a stage may include: positioning a calibration target on the stage with multiple different tilts; first determining an angle of incident of the light beam with respect to the calibration target with each tilt using a detector; mapping a response of the detector to a determined angle of incidence; and second determining the angle of incidence with respect to the workpiece based on a result of the mapping.

    摘要翻译: 公开了一种用于确定照射位于台架上的工件的光束的入射角的方法,系统和计算机程序产品。 用于确定照射位于台架上的工件的光束的入射角的方法可以包括:将校准目标放置在具有多个不同倾斜的平台上; 首先使用检测器确定每个倾斜的光束相对于校准目标的入射角; 将检测器的响应映射到确定的入射角; 并且基于所述映射的结果,第二确定相对于所述工件的入射角。

    Determining azimuth angle of incident beam to wafer
    9.
    发明授权
    Determining azimuth angle of incident beam to wafer 失效
    确定入射光束到晶圆的方位角

    公开(公告)号:US07646491B2

    公开(公告)日:2010-01-12

    申请号:US11766820

    申请日:2007-06-22

    IPC分类号: G01B11/24

    CPC分类号: G01B11/26

    摘要: A method, system and computer program product for determining an Azimuth angle of an incident beam to a wafer are disclosed. A method comprises: using the incident beam to make a first set of measurements of calibration targets of a first set of grating angles that are different than one another; analyzing the first set of measurements to determine an reference grating angle which corresponds to a grating line to which the incident beam has a practically zero Azimuth angle; and determining the Azimuth angle of the incident beam to the wafer using the determined reference grating angle.

    摘要翻译: 公开了一种用于确定入射光束到晶片的方位角的方法,系统和计算机程序产品。 一种方法包括:使用入射光束对彼此不同的第一组光栅角进行校准目标的第一组测量; 分析第一组测量以确定对应于入射光束具有实际上零方位角的光栅线的参考光栅角度; 以及使用所确定的参考光栅角度确定入射光束到晶片的方位角。