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10 条记录 (耗时 0.013 秒)

    Piezo-actuated CMP carrier
    2.
    发明授权
    Piezo-actuated CMP carrier 失效
    压电式CMP载体

    公开(公告)号：US06325696B1

    公开(公告)日：2001-12-04

    申请号：US09395393

    申请日：1999-09-13

    申请人： Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael F. Lofaro ,  Adam D. Ticknor ,  Ronald D. Fiege

    发明人： Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael F. Lofaro ,  Adam D. Ticknor ,  Ronald D. Fiege

    IPC分类号： B24B4900

    CPC分类号： B24B37/30 ,  B24B37/32 ,  B24B49/12 ,  B24B49/16

    摘要： A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.

    摘要翻译： 化学机械抛光（CMP）控制系统控制正在抛光的半导体晶片背面的压力分布。 该系统包括具有用于支撑半导体晶片的载体的CMP装置。 载体包括多个双功能压电致动器。 致动器感测半导体晶片上的压力变化，并且可以单独控制。 控制器连接到致动器，用于监测感测的压力变化并控制致动器以提供横跨半导体晶片的受控压力分布。

    Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit
    3.
    发明授权
    Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit 有权
    具有凸起的外部基极的双极晶体管在集成的BiCMOS电路中制造

    公开(公告)号：US06492238B1

    公开(公告)日：2002-12-10

    申请号：US09887310

    申请日：2001-06-22

    申请人： David C. Ahlgren ,  Gregory G. Freeman ,  Feng-Yi Huang ,  Adam D. Ticknor

    发明人： David C. Ahlgren ,  Gregory G. Freeman ,  Feng-Yi Huang ,  Adam D. Ticknor

    IPC分类号： H01L2100

    CPC分类号： H01L29/66287 ,  H01L21/8249 ,  H01L27/0623

    摘要： A process for forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector integrated with a CMOS circuit with a gate. An intermediate semiconductor structure is provided having CMOS and bipolar areas. An intrinsic base layer is provided in the bipolar area. A base oxide is formed across, and a sacrificial emitter stack silicon layer is deposited on, both the CMOS and bipolar areas. A photoresist is applied to protect the bipolar area and the structure is etched to remove the sacrificial layer from the CMOS area only such that the top surface of the sacrificial layer on the bipolar area is substantially flush with the top surface of the CMOS area. Finally, a polish stop layer is deposited having a substantially flat top surface across both the CMOS and bipolar areas suitable for subsequent chemical-mechanical polishing (CMP) to form the raised extrinsic base.

    摘要翻译： 用于形成具有凸起的外部基极，发射极和与具有栅极的CMOS电路集成的集电极的双极晶体管的工艺。 提供具有CMOS和双极区域的中间半导体结构。 在双极区域内提供本征基层。 基底氧化物跨越形成，牺牲发射极堆叠硅层沉积在CMOS和双极区两者上。 施加光致抗蚀剂以保护双极区域，并且蚀刻该结构以从CMOS区域去除牺牲层，使得双极区域上的牺牲层的顶表面基本上与CMOS区域的顶表面齐平。 最后，沉积抛光停止层，其具有穿过适于随后的化学机械抛光（CMP）的CMOS和双极区域的基本平坦的顶表面，以形成凸起的外在基体。

    Confined water fixture for holding wafers undergoing chemical-mechanical polishing
    4.
    发明授权
    Confined water fixture for holding wafers undergoing chemical-mechanical polishing 失效
    用于保持晶片进行化学机械抛光的密封水夹具

    公开(公告)号：US5267418A

    公开(公告)日：1993-12-07

    申请号：US890041

    申请日：1992-05-27

    申请人： James E. Currie ,  Ronald N. Schulz ,  Adam D. Ticknor

    发明人： James E. Currie ,  Ronald N. Schulz ,  Adam D. Ticknor

    IPC分类号： B23Q3/08 ,  B24B37/30 ,  H01L21/304 ,  B24B41/06

    CPC分类号： B24B37/30 ,  B23Q3/082

    摘要： A wafer polishing fixture is disclosed containing a first liquid film confined by a non-porous but flexible enclosure for distributing evenly the applied polishing forces across the surface of a wafer supported by the confined liquid. The fixture comprises a flexible, non-porous template with a pocket for receiving a wafer to be polished. A washer is placed between a carrier and the template pocket. A film of water fills the bottom of the pocket and is confined with the aid of the washer and by an overlying porous pad extending across the pocket and having a non-porous sheath facing the liquid. A second liquid film saturates and covers the upper surface of the pad. The wafer to be polished floats upon the second liquid film within the pocket.

    Chemical-mechanical polishing pad conditioner
    8.
    发明授权
    Chemical-mechanical polishing pad conditioner 失效
    化学机械抛光垫调理剂

    公开(公告)号：US06500054B1

    公开(公告)日：2002-12-31

    申请号：US09590576

    申请日：2000-06-08

    申请人： William H. Ma ,  Adam D. Ticknor

    发明人： William H. Ma ,  Adam D. Ticknor

    IPC分类号： B24B100

    CPC分类号： B24B53/017 ,  B24B37/26 ,  B24B53/12

    摘要： A chemical-mechanical polishing (CMP) pad conditioner. The conditioner has a non-uniform conditioning surface with a plurality of conditioning elements. The non-uniform surface comprises a first section having a first cutting volume per unit width and a second section having a second cutting volume per unit width that is different from the first cutting volume per unit width. The difference in cutting volume may be provided by different projected widths of the individual conditioning elements, by a difference in the linear density between the two sections, or by a difference in the cutting depth. A CMP tool comprising a polishing pad, a conditioning pad having the disclosed structure, and a mechanism for moving the polishing pad relative to the pad conditioner is also provided. A method is further provided for uniformly conditioning a CMP pad using a conditioner having the structure described.

    摘要翻译： 化学机械抛光（CMP）垫调节剂。 调理剂具有不均匀的调节表面和多个调理元件。 不均匀表面包括具有每单位宽度的第一切割体积的第一部分和具有与每单位宽度的第一切割体积不同的每单位宽度的第二切割体积的第二部分。 切割体积的差异可以通过各个调理元件的不同投影宽度，两个部分之间的线密度的差异或切割深度的差异来提供。 还提供了一种CMP工具，其包括抛光垫，具有所公开的结构的调节垫以及用于相对于垫调节器移动抛光垫的机构。 还提供了一种使用具有所述结构的调理器均匀调理CMP垫的方法。

    Regeneration of chemical mechanical polishing pads in-situ
    10.
    发明授权
    Regeneration of chemical mechanical polishing pads in-situ 失效
    化学机械抛光垫原位再生

    公开(公告)号：US06296717B1

    公开(公告)日：2001-10-02

    申请号：US09330657

    申请日：1999-06-11

    申请人： Adam D. Ticknor ,  Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael L. Passow

    发明人： Adam D. Ticknor ,  Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael L. Passow

    IPC分类号： C23G136

    CPC分类号： B24B37/042 ,  H01L21/30625

    摘要： An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.

    摘要翻译： 一种用于再生化学机械抛光垫的原位方法，其包括以下步骤：通过在抛光表面上分配液体可模制材料（例如蜡，聚合物或水）形成抛光垫，并通过降低温度来固化液体材料 ，使可模塑材料硬化; 在抛光垫上分配浆料; 用浆料和抛光垫的组合抛光半导体晶片的表面; 并原位再生抛光垫。 该方法快速，容易和重复地重现和刷新其上抛光半导体晶片的表面。 抛光垫还可以包括嵌入其中的磨料以增强其抛光能力。