公开(公告)号：US08658937B2

公开(公告)日：2014-02-25

申请号：US12986914

申请日：2011-01-07

Applicant: Kenneth J. Harte ,  Ronald P. Millman, Jr. ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb ,  Murray L. Tardif

Inventor： Kenneth J. Harte ,  Ronald P. Millman, Jr. ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb ,  Murray L. Tardif

IPC: B23K26/36 ,  H01L21/00

CPC classification number: H01L21/268 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0676 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/123 ,  B23K26/142 ,  G03F7/2028 ,  H01L21/02087 ,  H01L21/6708

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing solvent and/or abrasive methods and thus will improve die yield.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光学系统，用于在大气中将辐射束引导到由卡盘支撑的旋转基板上。 光学系统准确和精确地引导光束从衬底的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘去除或转换有机或无机膜，膜堆，残余物或颗粒。 可选的气体注入器系统将气体引导到衬底边缘以帮助反应。 通过包围反应部位的排气管除去加工副产物。 本发明允许对边缘排除区进行精确控制，导致晶片上可用的管芯数量的增加。 用本发明的晶片边缘加工替代了现有的溶剂和/或研磨方法，从而提高了模具产量。

公开(公告)号：US08415587B2

公开(公告)日：2013-04-09

申请号：US13034202

申请日：2011-02-24

Applicant: Ronald P. Millman, Jr. ,  Kenneth J. Harte ,  Victoria M. Chaplick ,  David J. Elliott

Inventor： Ronald P. Millman, Jr. ,  Kenneth J. Harte ,  Victoria M. Chaplick ,  David J. Elliott

IPC: B23K26/00

CPC classification number: B23K37/0426 ,  B23K26/0619 ,  B23K26/0622 ,  B23K26/0676 ,  B23K26/0823 ,  B23K26/103 ,  B23K26/142 ,  B23K26/16 ,  B23K26/361 ,  B23K26/40 ,  B23K37/047 ,  B23K2101/40 ,  B23K2103/50

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and fiber-optic system to direct laser radiation onto a rotating substrate supported by a chuck. A laser beam is transmitted into a bundle of optical fibers, and the fibers accurately and precisely direct the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing methods that use large volumes of purified water and hazardous chemicals including solvents, acids, alkalis, and proprietary strippers.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光纤系统，用于将激光辐射引导到由卡盘支撑的旋转基底上。 激光束被传送到一束光纤中，并且光纤精确地和精确地引导光束从大气中去除或转换有机或无机膜，膜堆，残余物或颗粒，从顶部边缘，顶部斜面，顶点 ，底部斜面和底部边缘，在单个工艺步骤中。 通过包围反应部位的排气管除去反应副产物。 本发明允许对边缘排除宽度的精确控制，导致晶片上可用的管芯数量的增加。 本发明的晶圆边缘处理取代了现有的使用大量净化水和危险化学品（包括溶剂，酸，碱和专有剥离剂）的方法。

公开(公告)号：US20110139757A1

公开(公告)日：2011-06-16

申请号：US13034191

申请日：2011-02-24

Applicant: Ronald P. Millman, JR. ,  Kenneth J. Harte ,  Victoria M. Chaplick ,  David J. Elliott ,  Murray L. Tardif ,  Eugene O. Degenkolb

Inventor： Ronald P. Millman, JR. ,  Kenneth J. Harte ,  Victoria M. Chaplick ,  David J. Elliott ,  Murray L. Tardif ,  Eugene O. Degenkolb

IPC: B23K26/38

CPC classification number: B23K37/0426 ,  B23K26/0619 ,  B23K26/0622 ,  B23K26/0676 ,  B23K26/0823 ,  B23K26/103 ,  B23K26/142 ,  B23K26/16 ,  B23K26/361 ,  B23K26/40 ,  B23K37/047 ,  B23K2101/40 ,  B23K2103/50

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing methods that use large volumes of purified water and hazardous chemicals including solvents, acids, alkalis, and proprietary strippers.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光学系统，用于将辐射束引导到由卡盘支撑的旋转基底上。 光学系统准确且精确地引导光束，以从空气的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘中去除或转化有机或无机膜，膜堆，残余物或颗粒， 单一工艺步骤 可选的气体注入器系统将气体引导到衬底边缘以帮助反应。 通过包围反应部位的排气管除去反应副产物。 本发明允许对边缘排除宽度的精确控制，导致晶片上可用的管芯数量的增加。 本发明的晶圆边缘处理取代了现有的使用大量净化水和危险化学品（包括溶剂，酸，碱和专有剥离剂）的方法。

公开(公告)号：US08183500B2

公开(公告)日：2012-05-22

申请号：US13034247

申请日：2011-02-24

Applicant: Kenneth J. Harte ,  Ronald P. Millman, Jr. ,  Victoria M. Chaplick

Inventor： Kenneth J. Harte ,  Ronald P. Millman, Jr. ,  Victoria M. Chaplick

IPC: B23K26/00

CPC classification number: B23K37/0426 ,  B23K26/0619 ,  B23K26/0622 ,  B23K26/0676 ,  B23K26/0823 ,  B23K26/103 ,  B23K26/142 ,  B23K26/16 ,  B23K26/361 ,  B23K26/40 ,  B23K37/047 ,  B23K2101/40 ,  B23K2103/50

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing methods that use large volumes of purified water and hazardous chemicals including solvents, acids, alkalis, and proprietary strippers.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光学系统，用于在大气中将辐射束引导到由卡盘支撑的旋转基板上。 光学系统在单个工艺步骤中精确和精确地引导光束从衬底的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘去除或转换有机或无机膜，膜堆，残余物或颗粒。 通过包围反应部位的排气管除去反应副产物。 本发明允许对边缘排除宽度的精确控制，导致晶片上可用的管芯数量的增加。 本发明的晶圆边缘处理取代了现有的使用大量净化水和危险化学品（包括溶剂，酸，碱和专有剥离剂）的方法。

公开(公告)号：US20110168672A1

公开(公告)日：2011-07-14

申请号：US12986914

申请日：2011-01-07

Applicant: Kenneth J. Harte ,  Ronald P. Millman, JR. ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb ,  Murray L. Tardif

Inventor： Kenneth J. Harte ,  Ronald P. Millman, JR. ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb ,  Murray L. Tardif

IPC: C03C15/00 ,  H01L21/268

CPC classification number: H01L21/268 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0676 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/123 ,  B23K26/142 ,  G03F7/2028 ,  H01L21/02087 ,  H01L21/6708

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing solvent and/or abrasive methods and thus will improve die yield.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光学系统，用于在大气中将辐射束引导到由卡盘支撑的旋转基板上。 光学系统准确和精确地引导光束从衬底的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘去除或转换有机或无机膜，膜堆，残余物或颗粒。 可选的气体注入器系统将气体引导到衬底边缘以帮助反应。 通过包围反应部位的排气管除去加工副产物。 本发明允许对边缘排除区进行精确控制，导致晶片上可用的管芯数量的增加。 用本发明的晶片边缘加工替代了现有的溶剂和/或研磨方法，从而提高了模具产量。

公开(公告)号：US20110147352A1

公开(公告)日：2011-06-23

申请号：US13034247

申请日：2011-02-24

Applicant: Kenneth J. Harte ,  Ronald P. Millman, JR. ,  Victoria M. Chaplick

Inventor： Kenneth J. Harte ,  Ronald P. Millman, JR. ,  Victoria M. Chaplick

IPC: B23K26/00

CPC classification number: B23K37/0426 ,  B23K26/0619 ,  B23K26/0622 ,  B23K26/0676 ,  B23K26/0823 ,  B23K26/103 ,  B23K26/142 ,  B23K26/16 ,  B23K26/361 ,  B23K26/40 ,  B23K37/047 ,  B23K2101/40 ,  B23K2103/50

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing methods that use large volumes of purified water and hazardous chemicals including solvents, acids, alkalis, and proprietary strippers.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光学系统，用于在大气中将辐射束引导到由卡盘支撑的旋转基板上。 光学系统在单个工艺步骤中精确和精确地引导光束从衬底的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘去除或转换有机或无机膜，膜堆，残余物或颗粒。 通过包围反应部位的排气管除去反应副产物。 本发明允许对边缘排除宽度的精确控制，导致晶片上可用的管芯数量的增加。 本发明的晶圆边缘处理取代了现有的使用大量净化水和危险化学品（包括溶剂，酸，碱和专有剥离剂）的方法。

公开(公告)号：US08410394B2

公开(公告)日：2013-04-02

申请号：US13034191

申请日：2011-02-24

Applicant: Ronald P. Millman, Jr. ,  Kenneth J. Harte ,  Victoria M. Chaplick ,  David J. Elliott ,  Murray L. Tardif ,  Eugene O. Degenkolb

Inventor： Ronald P. Millman, Jr. ,  Kenneth J. Harte ,  Victoria M. Chaplick ,  David J. Elliott ,  Murray L. Tardif ,  Eugene O. Degenkolb

IPC: B23K26/14 ,  B23K26/16

CPC classification number: B23K37/0426 ,  B23K26/0619 ,  B23K26/0622 ,  B23K26/0676 ,  B23K26/0823 ,  B23K26/103 ,  B23K26/142 ,  B23K26/16 ,  B23K26/361 ,  B23K26/40 ,  B23K37/047 ,  B23K2101/40 ,  B23K2103/50

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing methods that use large volumes of purified water and hazardous chemicals including solvents, acids, alkalis, and proprietary strippers.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光学系统，用于将辐射束引导到由卡盘支撑的旋转基底上。 光学系统准确且精确地引导光束，以从空气的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘中去除或转化有机或无机膜，膜堆，残余物或颗粒， 单一工艺步骤 可选的气体注入器系统将气体引导到衬底边缘以帮助反应。 通过包围反应部位的排气管除去反应副产物。 本发明允许对边缘排除宽度的精确控制，导致晶片上可用的管芯数量的增加。 本发明的晶圆边缘处理取代了现有的使用大量净化水和危险化学品（包括溶剂，酸，碱和专有剥离剂）的方法。

公开(公告)号：US20110185971A1

公开(公告)日：2011-08-04

申请号：US12956302

申请日：2010-11-30

Applicant: David J. Elliott ,  Kenneth J. Harte ,  Ronald P. Millman, JR. ,  Victoria M. Chaplick ,  Eugene O. Degenkolb

Inventor： David J. Elliott ,  Kenneth J. Harte ,  Ronald P. Millman, JR. ,  Victoria M. Chaplick ,  Eugene O. Degenkolb

IPC: H01L21/00 ,  C23C16/458 ,  C23C16/52

CPC classification number: H01L21/268 ,  H01L21/2254

Abstract: The disclosed apparatus and method provides substrate impurity doping wherein a laser rapidly scans a substrate while simultaneously a uniform laminar flow of reactive gas is injected, the interaction of the laser radiation and the dopant results in a uniform diffusion of the dopant species in all planes (X,Y,Z) of the substrate. Laser energy density, wavelength, and pulse geometry are adjustable, in a simple system for volume manufacturing, to provide depth and dose control of the dopant. The system optics can be focused to form a high resolution laser beam to directly write the doping area pattern geometry. Alternatively the laser beam can be optically expanded to form a large diameter beam for large area diffusion of the dopant through a patterned mask.

Abstract translation: 所公开的装置和方法提供衬底杂质掺杂，其中激光快速扫描衬底，同时注入均匀的反应气体层流，激光辐射和掺杂剂的相互作用导致掺杂剂物质在所有平面中的均匀扩散（ X，Y，Z）。 激光能量密度，波长和脉冲几何可以在简单的体积制造系统中调节，以提供掺杂剂的深度和剂量控制。 可以将系统光学器件聚焦以形成高分辨率激光束以直接写入掺杂区域图案几何形状。 或者，激光束可以被光学扩展以形成大直径光束，用于通过图案化掩模的掺杂剂的大面积扩散。

公开(公告)号：US20110061679A1

公开(公告)日：2011-03-17

申请号：US12819816

申请日：2010-06-21

Applicant: David J. Elliott ,  Ronald P. Millman, JR. ,  Victoria M. Chaplick ,  Murray Tardif ,  Krista Aiello ,  Kenneth J. Harte

Inventor： David J. Elliott ,  Ronald P. Millman, JR. ,  Victoria M. Chaplick ,  Murray Tardif ,  Krista Aiello ,  Kenneth J. Harte

IPC: B08B7/00

CPC classification number: B08B7/0042 ,  G03F7/427 ,  H01L21/31138

Abstract: A method for removing ion implanted photoresist from a surface of a substrate is provided. The method may include introducing a gas to a reaction chamber containing the substrate; illuminating the ion implanted photoresist with radiation from a laser in the presence of the gas; and scanning the radiation across the surface in the presence of the gas to photoreactively remove the ion implanted photoresist from the surface.

Abstract translation: 提供了从基板的表面去除离子注入的光致抗蚀剂的方法。 该方法可以包括将气体引入到包含基板的反应室中; 在存在气体的情况下用来自激光器的辐射照射离子注入的光致抗蚀剂; 并在存在气体的情况下扫描表面上的辐射，以从表面反射去除离子注入的光致抗蚀剂。

公开(公告)号：US20110147350A1

公开(公告)日：2011-06-23

申请号：US13034352

申请日：2011-02-24

Applicant: Ronald P. Millman, JR. ,  Kenneth J. Harte ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb

Inventor： Ronald P. Millman, JR. ,  Kenneth J. Harte ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb

IPC: B23K26/38

CPC classification number: B23K37/0426 ,  B23K26/0619 ,  B23K26/0622 ,  B23K26/0676 ,  B23K26/0823 ,  B23K26/103 ,  B23K26/142 ,  B23K26/16 ,  B23K26/361 ,  B23K26/40 ,  B23K37/047 ,  B23K2101/40 ,  B23K2103/50

Abstract: A modular wafer edge processing apparatus is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The modular apparatus can be integrated into wafer tracks, cluster tools, and other volume manufacturing systems. The edge processing apparatus of this invention includes a laser that can either be contained inside the module, or mounted externally to feed multiple modules and thereby reduce system cost. The apparatus contains a beam delivery subsystem to direct a beam of radiation onto the edges of a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing methods that use large volumes of purified water and hazardous chemicals including solvents, acids, alkalis, and proprietary strippers.

Abstract translation: 公开了一种克服了半导体制造中使用的常规边缘处理方法和系统的限制的模块化晶片边缘处理装置。 模块化设备可以集成到晶片轨道，集群工具和其他体积制造系统中。 本发明的边缘处理装置包括可以被包含在模块内部的激光器，或者外部安装用于馈送多个模块，从而降低系统成本。 该装置包含用于将辐射束引导到由卡盘支撑的旋转基板的边缘上的光束传送子系统。 光学系统准确且精确地引导光束，以从空气的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘中去除或转化有机或无机膜，膜堆，残余物或颗粒， 单一工艺步骤 通过包围反应部位的排气管除去反应副产物。 本发明允许对边缘排除宽度的精确控制，导致晶片上可用的管芯数量的增加。 本发明的晶圆边缘处理取代了现有的使用大量净化水和危险化学品（包括溶剂，酸，碱和专有剥离剂）的方法。