公开(公告)号：US20110127621A1

公开(公告)日：2011-06-02

申请号：US12737170

申请日：2009-06-23

Applicant: Fumio Kimura ,  Ryohei Kamiya ,  Hiroshi Takahashi ,  Ryuta Mitsusue ,  Yoshifumi Yoshida

Inventor： Fumio Kimura ,  Ryohei Kamiya ,  Hiroshi Takahashi ,  Ryuta Mitsusue ,  Yoshifumi Yoshida

IPC: H01L29/84

CPC classification number: H03H3/0076 ,  H03H9/2473 ,  H03H2009/02496

Abstract: A silicon oxide film 113 is formed on the vibrating parts 102 and 103 of an MEMS-type electrostatically-actuated flexural vibrator. At least one structure where no oxide film is formed is provided near the vibrating parts 102 and 103. By employing a structure in which both ends of the structure and both ends of the vibrating parts 102 and 103 are integrally formed, a compressive stress is applied to the vibrating parts 102 and 103. As a result, the frequency temperature characteristics can be improved.

Abstract translation: 在MEMS型静电致动弯曲振动器的振动部件102和103上形成氧化硅膜113。 在振动部件102和103附近设置至少一个没有形成氧化膜的结构。通过采用其结构的两端和振动部件102和103的两端一体形成的结构，施加压缩应力 到振动部102和103.结果，可以提高频率温度特性。

公开(公告)号：US20130020713A1

公开(公告)日：2013-01-24

申请号：US13497611

申请日：2009-09-25

Applicant: Chirayarikathu Veedu Sankarapillai Premachandran ,  Rakesh Kumar ,  Nagarajan Ranganathan ,  Won Kyoung Choi ,  Ebin Liao ,  Yasuyuki Mitsuoka ,  Hiroshi Takahashi ,  Ryuta Mitsusue

Inventor： Chirayarikathu Veedu Sankarapillai Premachandran ,  Rakesh Kumar ,  Nagarajan Ranganathan ,  Won Kyoung Choi ,  Ebin Liao ,  Yasuyuki Mitsuoka ,  Hiroshi Takahashi ,  Ryuta Mitsusue

IPC: H01L23/48 ,  H01L21/50

CPC classification number: H01L21/6836 ,  B81B2207/092 ,  B81B2207/093 ,  B81B2207/097 ,  B81C2203/019 ,  H01L24/48 ,  H01L24/94 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/16315 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In an embodiment, a wafer level package may be provided. The wafer level package may include a device wafer including a MEMS device, a cap wafer disposed over the device wafer, at least one first interconnect disposed between the device wafer and the cap wafer and configured to provide an electrical connection between the device wafer and the cap wafer, and a conformal sealing ring disposed between the device wafer and the cap wafer and configured to surround the at least one first interconnect and the MEMS device so as to provide a conformally sealed environment for the at least one first interconnect and the MEMS device, wherein the conformal sealing ring may be configured to conform to a respective suitable surface of the device wafer and the cap wafer when the device wafer may be bonded to the cap wafer. A method of forming a wafer level package may also be provided.

Abstract translation: 在一个实施例中，可以提供晶片级封装。 晶片级封装可以包括包括MEMS器件的器件晶片，设置在器件晶片上的帽晶片，设置在器件晶片和帽晶片之间的至少一个第一互连，并且被配置为在器件晶片和晶片级封装之间提供电连接 帽状晶片和保形密封环，其设置在器件晶片和盖晶片之间并且被配置为围绕至少一个第一互连和MEMS器件，以便为至少一个第一互连和MEMS器件提供保形密封的环境 ，其中所述保形密封环可以被配置为当所述器件晶片可以结合到所述盖晶片时，使其符合所述器件晶片和所述盖晶片的相应合适的表面。 还可以提供一种形成晶片级封装的方法。

公开(公告)号：US08729695B2

公开(公告)日：2014-05-20

申请号：US13497611

申请日：2009-09-25

Applicant: Chirayarikathu Veedu Sankarapillai Premachandran ,  Rakesh Kumar ,  Nagarajan Ranganathan ,  Won Kyoung Choi ,  Ebin Liao ,  Yasuyuki Mitsuoka ,  Hiroshi Takahashi ,  Ryuta Mitsusue

Inventor： Chirayarikathu Veedu Sankarapillai Premachandran ,  Rakesh Kumar ,  Nagarajan Ranganathan ,  Won Kyoung Choi ,  Ebin Liao ,  Yasuyuki Mitsuoka ,  Hiroshi Takahashi ,  Ryuta Mitsusue

IPC: H01L23/12 ,  H01L21/00

CPC classification number: H01L21/6836 ,  B81B2207/092 ,  B81B2207/093 ,  B81B2207/097 ,  B81C2203/019 ,  H01L24/48 ,  H01L24/94 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/16315 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In an embodiment, a wafer level package may be provided. The wafer level package may include a device wafer including a MEMS device, a cap wafer disposed over the device wafer, at least one first interconnect disposed between the device wafer and the cap wafer and configured to provide an electrical connection between the device wafer and the cap wafer, and a conformal sealing ring disposed between the device wafer and the cap wafer and configured to surround the at least one first interconnect and the MEMS device so as to provide a conformally sealed environment for the at least one first interconnect and the MEMS device, wherein the conformal sealing ring may be configured to conform to a respective suitable surface of the device wafer and the cap wafer when the device wafer may be bonded to the cap wafer. A method of forming a wafer level package may also be provided.

Abstract translation: 在一个实施例中，可以提供晶片级封装。 晶片级封装可以包括包括MEMS器件的器件晶片，设置在器件晶片上的帽晶片，设置在器件晶片和帽晶片之间的至少一个第一互连，并且被配置为在器件晶片和晶片级封装之间提供电连接 帽状晶片和保形密封环，其设置在器件晶片和盖晶片之间并且被配置为围绕至少一个第一互连和MEMS器件，以便为至少一个第一互连和MEMS器件提供保形密封的环境 ，其中所述保形密封环可以被配置为当所述器件晶片可以结合到所述盖晶片时，使其符合所述器件晶片和所述盖晶片的相应合适的表面。 还可以提供一种形成晶片级封装的方法。

公开(公告)号：US08212325B2

公开(公告)日：2012-07-03

申请号：US12737170

申请日：2009-06-23

Applicant: Fumio Kimura ,  Ryohei Kamiya ,  Hiroshi Takahashi ,  Ryuta Mitsusue ,  Yoshifumi Yoshida

Inventor： Fumio Kimura ,  Ryohei Kamiya ,  Hiroshi Takahashi ,  Ryuta Mitsusue ,  Yoshifumi Yoshida

IPC: H01L29/84

CPC classification number: H03H3/0076 ,  H03H9/2473 ,  H03H2009/02496

Abstract: An electrostatic vibrator has a vibrating plate including beam-shaped vibrating parts each fixed at opposite ends thereof and configured for electrostatic actuation to perform flexural vibration, and temperature compensation parts connected to the vibrating parts. A silicon oxide film covers each of the vibrating parts but not the temperature compensation parts. A substrate is mounted in parallel relation to the vibrating plate. An oxide layer is disposed between the substrate to the vibrating plate. Electrodes are formed on the substrate and arranged on opposite sides of each of the vibrating parts.

Abstract translation: 静电振动器具有振动板，该振动板包括各自固定在其相对两端的波形振动部件，并被构造成用于进行静电致动以进行弯曲振动，以及温度补偿部件连接到振动部件。 氧化硅膜覆盖每个振动部分，但不覆盖温度补偿部分。 基板与振动板平行地安装。 氧化层设置在基板与振动板之间。 电极形成在基板上并布置在每个振动部分的相对侧上。