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公开(公告)号：US08231798B2
公开(公告)日：2012-07-31
申请号：US12578844
申请日：2009-10-14
IPC分类号： B44C1/22
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. A dielectric plate includes a tray support surface supporting a lower surface of the tray, substrate placement portions inserted from a lower surface side of the tray into the substrate accommodation holes and having a substrate placement surface at its upper end surface. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement surface. The substrate is retained on the substrate placement surface with high degree of adhesion. Cooling efficiency of the substrate is improved and processing is uniform at the entire region of the substrate surface.
摘要翻译： 用于干蚀刻装置的托盘包括穿透厚度方向的基板容纳孔和支撑基板的下表面的外周边缘部分的基板支撑部。 电介质板包括支撑托盘的下表面的托盘支撑表面，从托盘的下表面侧插入到基板容纳孔中的基板放置部分，并且在其上端表面具有基板放置表面。 直流电压施加机构对静电吸引电极施加直流电压。 导热气体供给机构在基板和基板配置面之间提供导热气体。 基板被保持在基板放置表面上，具有高度的附着力。 提高了基板的冷却效率，并且在基板表面的整个区域处理均匀。
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2.发明申请公开(公告)号：US20100173431A1
公开(公告)日：2010-07-08
申请号：US12676186
申请日：2008-08-25
IPC分类号： H01L21/31 , H01L21/3065
CPC分类号： H01L21/02032 , H01L21/3065
摘要： Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.
摘要翻译： 提供了通过去除不同的材料层来回收其上形成有不同材料层的半导体晶片的晶片回收方法。 晶片回收方法包括物理去除不同材料层的物理去除步骤，在物理去除步骤中在其上除去不同材料层的半导体晶片的表面上形成膜的成膜步骤，以及干燥 蚀刻步骤，通过等离子体与形成在膜形成步骤中的膜一起蚀刻半导体晶片。
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公开(公告)号：US07736528B2
公开(公告)日：2010-06-15
申请号：US12090214
申请日：2006-10-10
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.
摘要翻译： 用于干蚀刻装置1的托盘15具有穿透厚度方向的基板容纳孔19A至19D以及支撑基板2的下表面2a的外周边缘部分的基板支撑部21.电介质板23具有托盘支撑表面 28，支撑托盘15的下表面，从托盘15的下表面侧插入到基板容纳孔19A至19D中的基板放置部分29A至29D，并且在其上端面具有用于放置基板的基板放置表面31 直流电压施加机构43对静电吸引电极40施加直流电压。导热气体供给机构45在基板2和基板配置面31之间供给导热气体。基板2能够保持在基板 放置面31具有高度的粘合力。 这导致基板2的冷却效率提高，并且在包括外周边缘附近的基板表面的整个区域处理均匀。
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公开(公告)号：US08591754B2
公开(公告)日：2013-11-26
申请号：US13527807
申请日：2012-06-20
IPC分类号： B44C1/22
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.
摘要翻译： 用于干蚀刻装置的托盘包括穿透厚度方向的基板容纳孔和支撑基板的下表面的外周边缘部分的基板支撑部。 上部包括支撑托盘的下表面的托盘支撑表面，其中每个基板放置部分的基板放置部分以及用于容纳基板支撑部分的凹部。 直流电压施加机构对静电吸引电极施加直流电压。 导热气体供给机构在基板和基板配置部之间供给导热气体。 在承载基板期间，基板的下表面的外周缘由基板收纳孔支撑。 在基板的加工过程中，基板支撑部分容纳在凹部中。
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公开(公告)号：US20090218045A1
公开(公告)日：2009-09-03
申请号：US12092381
申请日：2006-11-01
申请人： Mitsuru Hiroshima , Hiromi Asakura , Syouzou Watanabe , Mitsuhiro Okune , Hiroyuki Suzuki , Ryuzou Houchin
发明人： Mitsuru Hiroshima , Hiromi Asakura , Syouzou Watanabe , Mitsuhiro Okune , Hiroyuki Suzuki , Ryuzou Houchin
CPC分类号： H01J37/32082
摘要： The plasma processing apparatus has a beam-shaped spacer 7 placed at the upper opening of the chamber 3 opposed to the substrate 2. The beam-shaped spacer 7 has an annular outer peripheral portion 7a whose lower surface 7d is supported by the chamber 3, a central portion 7b located at the center of a region surrounded by the outer peripheral portion 7a in plane view, and a plurality of beam portions 7c extending radially from the central portion 7b to the outer peripheral portion 7a. An entire of a dielectric plate 8 is uniformly supported by the beam-shaped spacer 7. The dielectric plate 8 can be reduces in thickness while securing a mechanical strength for supporting the atmospheric pressure when the chamber 3 is internally reduced in pressure.
摘要翻译： 等离子体处理装置具有放置在与基板2相对的室3的上开口处的波束形间隔件7.梁状间隔件7具有环形外周部7a，其下表面7d由室3支撑， 位于由平面内的外周部7a包围的区域的中心的中央部7b，以及从中央部7b向外周部7a径向延伸的多个梁部7c。 整个电介质板8均匀地被梁状间隔件7支撑。当室3在内部压力降低时，电介质板8的厚度可以减小，同时确保用于支撑大气压力的机械强度。
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公开(公告)号：US08563332B2
公开(公告)日：2013-10-22
申请号：US12676186
申请日：2008-08-25
IPC分类号： H01L21/31 , H01L21/3065
CPC分类号： H01L21/02032 , H01L21/3065
摘要： Provided is a wafer reclamation method for reclaiming a semiconductor wafer, on which a different material layer is formed, by removing the different material layer. The wafer reclamation method includes a physically removing step of physically removing the different material layer, a film forming step of forming a film on a surface of the semiconductor wafer from which the different material layer has been removed in the physically removing step, and a dry etching step of etching the semiconductor wafer by plasma together with the film formed in the film forming step.
摘要翻译： 提供了通过去除不同的材料层来回收其上形成有不同材料层的半导体晶片的晶片回收方法。 晶片回收方法包括物理去除不同材料层的物理去除步骤，在物理去除步骤中在其上除去不同材料层的半导体晶片的表面上形成膜的成膜步骤，以及干燥 蚀刻步骤，通过等离子体与形成在膜形成步骤中的膜一起蚀刻半导体晶片。
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公开(公告)号：US20120256363A1
公开(公告)日：2012-10-11
申请号：US13527807
申请日：2012-06-20
IPC分类号： B23Q3/00
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.
摘要翻译： 用于干蚀刻装置的托盘包括穿透厚度方向的基板容纳孔和支撑基板的下表面的外周边缘部分的基板支撑部。 上部包括支撑托盘的下表面的托盘支撑表面，其中每个基板放置部分的基板放置部分以及用于容纳基板支撑部分的凹部。 直流电压施加机构对静电吸引电极施加直流电压。 导热气体供给机构在基板和基板配置部之间供给导热气体。 在承载基板期间，基板的下表面的外周缘由基板收纳孔支撑。 在基板的加工过程中，基板支撑部分容纳在凹部中。
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公开(公告)号：US20100051584A1
公开(公告)日：2010-03-04
申请号：US12578844
申请日：2009-10-14
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.
摘要翻译： 用于干蚀刻装置1的托盘15具有穿透厚度方向的基板容纳孔19A至19D以及支撑基板2的下表面2a的外周边缘部分的基板支撑部21.电介质板23具有托盘支撑表面 28，支撑托盘15的下表面，从托盘15的下表面侧插入到基板容纳孔19A至19D中的基板放置部分29A至29D，并且在其上端面具有用于放置基板的基板放置表面31 直流电压施加机构43对静电吸引电极40施加直流电压。导热气体供给机构45在基板2和基板配置面31之间供给导热气体。基板2能够保持在基板 放置面31具有高度的粘合力。 这导致基板2的冷却效率提高，并且在包括外周边缘附近的基板表面的整个区域处理均匀。
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公开(公告)号：US20090255901A1
公开(公告)日：2009-10-15
申请号：US12090214
申请日：2006-10-11
IPC分类号： H01L21/306 , C23C16/453 , H05H1/24 , C23F1/00
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.
摘要翻译： 用于干蚀刻装置1的托盘15具有穿透厚度方向的基板容纳孔19A至19D以及支撑基板2的下表面2a的外周边缘部分的基板支撑部21.电介质板23具有托盘支撑表面 28，支撑托盘15的下表面，从托盘15的下表面侧插入到基板容纳孔19A至19D中的基板放置部分29A至29D，并且在其上端面具有用于放置基板的基板放置表面31 直流电压施加机构43对静电吸引电极40施加直流电压。导热气体供给机构45在基板2和基板配置面31之间供给导热气体。基板2能够保持在基板 放置面31具有高度的粘合力。 这导致基板2的冷却效率提高，并且在包括外周边缘附近的基板表面的整个区域处理均匀。
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