摘要:
The present invention relates to an electromechanical actuator comprising an electric motor (11) for driving an output shaft (4) in rotation via a reduction gear (20) and passive regulation means (30) allowing for control of the speed of rotation of the output shaft, and comprising a braking member (30), arranged between an output of the reduction gear and the output shaft to be driven, said braking member being arranged to ensure two different braking levels depending on the direction of rotation of the shaft, characterized in that the braking member is of hydraulic type and comprises fluid decantation means (33) between two chambers (34, 35) decanting under the effect of the rotation of the output shaft through a selective drawing member (41) which, depending on the direction of rotation of the actuator, opposes two distinct resistances to the decantation of the fluid from one chamber to the other.
摘要:
A method for determining diagnoses for a system having a plurality of pieces of equipment, the equipment being adapted to transmit signals indicating its operating state, includes the following steps: acquiring observations based on signals transmitted by the equipment of the system under diagnosis, and determining a global situation based on the acquired observations and predetermined failure trees associated with these observations, wherein a failure tree describes the relations between an observation and root causes, and a root cause indicates a failure in a piece of equipment; determining connected situations, a connected situation being a set of observations which, when considered in pairs, have at least one common root cause in their failure tree; determining partial diagnoses on the basis of each of the connected situations, the diagnoses including root causes associated with observations signalling a failure; and, displaying the diagnoses.
摘要:
The invention relates to a method for treating a silicon substrate for the production of photovoltaic cells against reduction in yield during the illumination of said photovoltaic cells. The invention also relates to a method for producing photovoltaic cells from the treated substrate. To said end, the invention relates to a method for treating a silicon substrate for the production of photovoltaic cells, said method including the following steps: a) providing a silicon substrate obtained from a metallurgically purified load, and b) annealing said substrate by heating the substrate to a temperature between 880° C. and 930° C. for a duration of between one and four hours, preferably at a temperature of 900° C., give or take 10° C., for two hours, give or take 10 minutes.
摘要:
Method for metallization of at least one photovoltaic cell comprising a substrate based on a semiconductor with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell. The method comprises at least the steps of: a) producing at least one metallization on the front face of the photovoltaic cell, b) a first annealing of the photovoltaic cell at a temperature between around 800° C. and 900° C., c) producing at least one metallization on the rear face of the substrate, d) a second annealing of the photovoltaic cell at a temperature between around 700° C. and 800° C.
摘要:
Methods of moving an aircraft undercarriage that is movable between a retracted position and a deployed position generally include: using a rotary electromechanical type drive actuator coupled to a portion of the aircraft undercarriage to raise it from the deployed position to the retracted position; disengaging the drive actuator during a descent of the undercarriage from the retracted position to the deployed position and using a hydraulic linear shock absorber coupled to a portion of the undercarriage to regulate the rate of descent and to absorb shock on arrival of the undercarriage in the deployed position; and neutralizing the shock absorber while raising the undercarriage.
摘要:
To reduce degradation, by the LID effect, of the conversion efficiency of photovoltaic cells made of crystalline silicon, one or more steps of controlled introduction of voids into the silicon are carried out by one or more steps chosen from among: siliciding, nitriding, ion implantation, laser irradiation, mechanical bending stress applied on one face of the silicon substrate, in combination with a temperature promoting the formation of voids in the substrate. These voids make it possible to reduce the level of interstitial oxygen by an effect of diffusion of VO complexes and precipitation of oxygen. The introduction of voids has the other effect of reducing the level of autointerstitials, and therefore of limiting the formation of interstitial boron. The phenomena of LID by activation of BiOi2 complexes are thus limited. This applies notably to photovoltaic cells based on monocrystalline or polycrystalline silicon having a high concentration of boron and oxygen.
摘要:
An ice skate blade assembly comprising: (a) an ice skate blade comprising first and second hooks projecting upwardly; (b) a blade holder having a bottom portion having a longitudinal groove extending therealong for receiving the upper edge of the ice skate blade and wherein the bottom portion further defines a recess extending upwardly from the longitudinal groove for receiving the first hook; and (c) a single actuator having a wall accessible by a finger of a user, a resilient portion having an end wall facing a section of the inner surface of the second pedestal and a base with an inner wall and a bottom wall having an upper surface, an end and a bottom surface, wherein the inner wall and the bottom wall define therebetween a channel opens to the bottom aperture for receiving the second hook.
摘要:
An ice skate blade assembly comprising: (a) an ice skate blade comprising first and second ends, an ice contacting surface and an upper edge opposed to the ice contacting surface, the upper edge comprising first and second hooks projecting upwardly proximate to one of the first and second ends respectively, the second hook having an upper surface, an end and a bottom surface; (b) a blade holder having first and second pedestals and a bottom portion having a longitudinal groove extending therealong for receiving the upper edge of the ice skate blade and wherein the bottom portion further defines a recess extending upwardly from the longitudinal groove for receiving the first hook and wherein the second pedestal has an inner surface defining a cavity with a bottom aperture opens to the longitudinal groove; and (c) a single actuator at least partially mounted within the cavity, the single actuator having a wall accessible by a finger of a user, a resilient portion having an end wall facing a section of the inner surface of the second pedestal and a base with an inner wall and a bottom wall having an upper surface, an end and a bottom surface, wherein the inner wall and the bottom wall define therebetween a channel opens to the bottom aperture for receiving the second hook.
摘要:
Method of processing a substrate containing at least one semiconductor of the SiXAY type and comprising at least four separate types of light elements, comprising at least the following steps: carrying out a first anneal of the substrate at a temperature T1 corresponding to a thermal activation temperature for a first one of the four types of light elements, carrying out a second anneal of the substrate at a temperature T2 corresponding to a thermal activation temperature for a second one of the four types of light elements, carrying out a third anneal of the substrate at a temperature T3 corresponding to a thermal activation temperature for a third one of the four types of light elements, carrying out a fourth anneal of the substrate at a temperature T4 corresponding to a thermal activation temperature for a fourth one of the four types of light elements, each anneal comprising a holding at the temperature T1, T2, T3 or T4 and the temperatures T1, T2, T3 and T4 being such that T1>T2>T3>T4.
摘要翻译:处理包含至少一种SiXay类型的半导体并且包括至少四种分离类型的光元件的衬底的方法,包括至少以下步骤:在对应于热活化温度的温度T1下进行衬底的第一退火 对于四种类型的光元件中的第一种,在与四种类型的光元件中的第二种类型的光元件的热激活温度相对应的温度T2下进行基板的第二退火,进行基板的第三退火 在与四种类型的光元件中的第三种类型的光元件的热活化温度相对应的温度T3下,在与四种类型的光中的第四种类型的光的热活化温度相对应的温度T4下进行基板的第四退火 元素,每个退火包括在温度T1,T2,T3或T4以及温度T1,T2,T3和T4的保持,使得T1> T2> T 3> T4。