公开(公告)号：US20080057202A1

公开(公告)日：2008-03-06

申请号：US11562064

申请日：2006-11-21

申请人： CHIEN-WEI WU ,  SHUO-WEI LIANG ,  WAN-CHI CHEN ,  CHENG-TZU YANG ,  SAI-CHANG LIU ,  PO-CHIU CHEN ,  MIN-CHUAN WANG ,  YUNG-CHIA KUAN

发明人： CHIEN-WEI WU ,  SHUO-WEI LIANG ,  WAN-CHI CHEN ,  CHENG-TZU YANG ,  SAI-CHANG LIU ,  PO-CHIU CHEN ,  MIN-CHUAN WANG ,  YUNG-CHIA KUAN

IPC分类号： B05D5/12 ,  B05D3/04 ,  B05D1/36

CPC分类号： H01L21/76838 ,  C23C18/1607 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1879 ,  C23C18/1882 ,  H01L21/288 ,  H01L21/76873 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： A method of fabricating of a metal line by a wet process is provided. A catalytic adhesive layer is formed on an insulating substrate. A fist metal layer is formed by an electoless plating process, and then, a second metal layer is formed by an electoless plating process or an electoplating process. The first and the second metal layers are patterned to form a metal line.

摘要翻译： 提供了一种通过湿法制造金属线的方法。 在绝缘基板上形成催化粘合剂层。 通过无电镀处理形成第一金属层，然后通过无电镀法或电镀法形成第二金属层。 将第一和第二金属层图案化以形成金属线。

公开(公告)号：US20090093093A1

公开(公告)日：2009-04-09

申请号：US11954082

申请日：2007-12-11

申请人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu

发明人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu

IPC分类号： H01L21/04 ,  H01L21/70 ,  H01L21/768

CPC分类号： H01L29/66765 ,  H01L21/28525 ,  H01L29/41733 ,  H01L29/458

摘要： A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

摘要翻译： 提供一种制造薄膜晶体管（TFT）的方法。 提供了具有形成在其上的栅极，电介质层，沟道层和欧姆接触层的衬底。 接下来，在覆盖欧姆接触层的基板上形成金属层。 接下来，通过湿蚀刻工艺同时蚀刻金属层和欧姆接触层，以形成源极/漏极并暴露沟道层。 因为湿蚀刻工艺可以用于选择性地蚀刻欧姆接触层，所以对下面的通道层的损坏可以忽略不计。 因此，可以提高装置的可靠性。 此外，可以简化该过程，可以提高TFT的产量和产量。

公开(公告)号：US20080067148A1

公开(公告)日：2008-03-20

申请号：US11670424

申请日：2007-02-02

申请人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu ,  Shuo-Wei Liang

发明人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu ,  Shuo-Wei Liang

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

摘要翻译： 提供了含有铜的图案化复合层的蚀刻剂。 蚀刻剂包括约5重量％至40重量％的过乙酸和用作主要组分，过乙酸稳定剂为约5重量％至15重量％，有机酸为约5重量％至10重量％，无机 酸为约5重量％至15重量％，盐为约8重量％至15重量％，基于蚀刻剂的总重量计。

公开(公告)号：US08669558B2

公开(公告)日：2014-03-11

申请号：US13349554

申请日：2012-01-12

申请人： Ching-Yang Liu ,  Wei-Hsiang Lin ,  Shu-Wei Chu ,  Hsiang-Chih Hsiao ,  Jhih-Jie Huang ,  Sai-Chang Liu ,  Yu-Hsing Liang

发明人： Ching-Yang Liu ,  Wei-Hsiang Lin ,  Shu-Wei Chu ,  Hsiang-Chih Hsiao ,  Jhih-Jie Huang ,  Sai-Chang Liu ,  Yu-Hsing Liang

IPC分类号： H01L29/04

CPC分类号： H01L27/3248

摘要： A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

摘要翻译： 像素结构包括薄膜晶体管器件，设置在薄膜晶体管器件上的绝缘层和设置在绝缘层上的像素电极。 薄膜晶体管器件包括设置在半导体层的一侧的浮置导电焊盘，并且电连接到源/漏电极。 绝缘层具有部分地暴露浮动导电焊盘的第一接触孔。 像素电极经由第一接触孔电连接到浮动导电焊盘。

公开(公告)号：US20120292622A1

公开(公告)日：2012-11-22

申请号：US13349554

申请日：2012-01-12

申请人： Ching-Yang Liu ,  Wei-Hsiang Lin ,  Shu-Wei Chu ,  Hsiang-Chih Hsiao ,  Jhih-Jie Huang ,  Sai-Chang Liu ,  Yu-Hsing Liang

发明人： Ching-Yang Liu ,  Wei-Hsiang Lin ,  Shu-Wei Chu ,  Hsiang-Chih Hsiao ,  Jhih-Jie Huang ,  Sai-Chang Liu ,  Yu-Hsing Liang

IPC分类号： H01L51/52 ,  H05K1/09

CPC分类号： H01L27/3248

摘要： A pixel structure includes a thin film transistor device, an insulating layer disposed on the thin film transistor device, and a pixel electrode disposed on the insulating layer. The thin film transistor device includes a floating conductive pad disposed at one side of a semiconductor layer, and electrically connected to a source/drain electrode. The insulating layer has a first contact hole partially exposing the floating conductive pad. The pixel electrode is electrically connected to the floating conductive pad via the first contact hole.

摘要翻译： 像素结构包括薄膜晶体管器件，设置在薄膜晶体管器件上的绝缘层和设置在绝缘层上的像素电极。 薄膜晶体管器件包括设置在半导体层的一侧的浮置导电焊盘，并且电连接到源/漏电极。 绝缘层具有部分地暴露浮动导电焊盘的第一接触孔。 像素电极经由第一接触孔电连接到浮动导电焊盘。

公开(公告)号：US07785941B2

公开(公告)日：2010-08-31

申请号：US11954082

申请日：2007-12-11

申请人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu

发明人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66765 ,  H01L21/28525 ,  H01L29/41733 ,  H01L29/458

摘要： A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

摘要翻译： 提供一种制造薄膜晶体管（TFT）的方法。 提供了具有形成在其上的栅极，电介质层，沟道层和欧姆接触层的衬底。 接下来，在覆盖欧姆接触层的基板上形成金属层。 接下来，通过湿蚀刻工艺同时蚀刻金属层和欧姆接触层，以形成源极/漏极并暴露沟道层。 因为湿蚀刻工艺可以用于选择性地蚀刻欧姆接触层，所以对下面的通道层的损坏可以忽略不计。 因此，可以提高装置的可靠性。 此外，可以简化该过程，可以提高TFT的产量和产量。

公开(公告)号：US07566404B2

公开(公告)日：2009-07-28

申请号：US11670424

申请日：2007-02-02

申请人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu ,  Shuo-Wei Liang

发明人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu ,  Shuo-Wei Liang

IPC分类号： C03C15/00

CPC分类号： C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

摘要翻译： 提供了一种用于图案化复合层含有铜的蚀刻剂。 蚀刻剂包括约5重量％至40重量％的过乙酸和用作主要组分，过乙酸稳定剂为约5重量％至15重量％，有机酸为约5重量％至10重量％，无机 酸为约5重量％至15重量％，盐为约8重量％至15重量％，基于蚀刻剂的总重量计。