LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING CELLS

    公开(公告)号:US20190280178A1

    公开(公告)日:2019-09-12

    申请号:US16424178

    申请日:2019-05-28

    Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.

    DEEP UV LIGHT EMITTING DIODE
    3.
    发明申请

    公开(公告)号:US20250169241A1

    公开(公告)日:2025-05-22

    申请号:US19027994

    申请日:2025-01-17

    Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

    Light emitting diode
    4.
    发明授权

    公开(公告)号:US12302679B2

    公开(公告)日:2025-05-13

    申请号:US18671619

    申请日:2024-05-22

    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

    Light emitting apparatus
    5.
    发明申请

    公开(公告)号:US20250089428A1

    公开(公告)日:2025-03-13

    申请号:US18824413

    申请日:2024-09-04

    Abstract: Disclosed is a light emitting apparatus. The light emitting apparatus includes a substrate, a plurality of emitters disposed on the substrate and configured to emit light, at least one color-determining layer disposed on the plurality of emitters, and a barrier layer surrounding the color-determining layer.

    Light radiation device for medical treatment

    公开(公告)号:US12233282B2

    公开(公告)日:2025-02-25

    申请号:US17965087

    申请日:2022-10-13

    Abstract: A light radiation device includes a housing, a substrate provided in the housing, and a light source mounted on the substrate. The light source includes a first light source including at least one first light source to emit first light having a blue wavelength band, a second light source including at least one second light source to emit second light having an ultraviolet wavelength band, and a control unit to control the first light source and the second light source such that the second light source sequentially emits the second light after the first light source emits the first light. A dose of the second light source is less than {right arrow over (1)}/10 of a dose of the first light source.

    Light module for plant cultivation and plant cultivation apparatus including the same

    公开(公告)号:US12225860B2

    公开(公告)日:2025-02-18

    申请号:US18219203

    申请日:2023-07-07

    Inventor: Hyun Su Song

    Abstract: A light source module includes at least one substrate, at least one main light source and at least one auxiliary light source. The at least one main light source and the at least one auxiliary light source are disposed on the at least one substrate. The main light source comprises a first main light emitter configured to emit a first main light having a first number of peak wavelengths and a second main light emitter configured to emit a second main light having a second number of peak wavelengths. In addition, the auxiliary light source is configured to emit a third auxiliary light having a third number of peak wavelengths. The first number of peak wavelengths can be different from the second number of peak wavelengths. A peak wavelength of the second main light can be longer than all of the peak wavelengths of the first main light.

    LED display apparatus
    8.
    发明授权

    公开(公告)号:US12199133B2

    公开(公告)日:2025-01-14

    申请号:US18527987

    申请日:2023-12-04

    Abstract: A display apparatus including a display substrate, light emitting devices disposed on the display substrate, circuit electrodes disposed between the light emitting devices and the display substrate, and a transparent layer covering the light emitting devices and the circuit electrodes, in which at least one of the light emitting devices includes a first LED sub-unit configured to emit light having a first wavelength, a second LED sub-unit adjacent to the first LED sub-unit and configured to emit light having a second wavelength, a third LED sub-unit adjacent to the second LED sub-unit and configured to emit light having a third wavelength, and a substrate disposed on the third LED sub-unit, in which a difference in refractive indices between the transparent layer and air is less than a difference in refractive indices between the substrate and a semiconductor layer of the third LED sub-unit.

    Light emitting device
    9.
    发明授权

    公开(公告)号:US12183848B2

    公开(公告)日:2024-12-31

    申请号:US17964056

    申请日:2022-10-12

    Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

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