公开(公告)号：US11183620B2

公开(公告)日：2021-11-23

申请号：US16424178

申请日：2019-05-28

Applicant: SEOUL VIOSYS CO., LTD. ,  SEOUL VIOSYS CO., LTD.

Inventor： Se Hee Oh ,  Hyun A Kim ,  Jong Kyu Kim ,  Jong Hyeon Chae

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/10 ,  H01L33/64 ,  H01L33/44 ,  H01L33/08 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60 ,  F21S41/141 ,  F21Y115/10

Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.

公开(公告)号：US12302679B2

公开(公告)日：2025-05-13

申请号：US18671619

申请日：2024-05-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Kwon Kim ,  Min Chan Heo ,  Kyoung Wan Kim ,  Jong Kyu Kim ,  Hyun A Kim ,  Joon Sup Lee

IPC: H10H20/857 ,  H10H20/814 ,  H10H20/841 ,  H10H29/14

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

公开(公告)号：US10749080B2

公开(公告)日：2020-08-18

申请号：US16660460

申请日：2019-10-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Daewoong Suh

IPC: H01L33/44 ,  H01L23/00 ,  H01L33/24 ,  H01L33/14 ,  H01L33/10 ,  H01L33/62 ,  H01L33/54 ,  H01L33/40 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075 ,  H01L33/08

Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.

公开(公告)号：US20170365638A9

公开(公告)日：2017-12-21

申请号：US15409306

申请日：2017-01-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu Kim ,  So Ra Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Joon Sup Lee ,  Min Woo Kang ,  Se Hee Oh ,  Hyun A Kim ,  Hyoung Jin Lim

IPC: H01L27/15 ,  H01L33/36 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00012

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US09847457B2

公开(公告)日：2017-12-19

申请号：US14985162

申请日：2015-12-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Se Hee Oh ,  Hyun A Kim

IPC: H01L33/00 ,  H01L29/06 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/16225

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US09397269B2

公开(公告)日：2016-07-19

申请号：US14677904

申请日：2015-04-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US09343644B2

公开(公告)日：2016-05-17

申请号：US14588878

申请日：2015-01-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L33/44 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/507 ,  H01L2224/16 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: Provided is a light emitting diode (LED) in which a side surface of a reflective metal layer has a predetermined angle, and occurrence of cracks in a conductive barrier layer formed on the reflective metal layer can be prevented. Also, an LED module using LEDs is disclosed. A reflection pattern electrically connected to a second semiconductor layer is partially exposed by patterning a first insulating layer. Accordingly, a first pad is formed through the partially opened first pad region. Also, a conductive reflection layer electrically connected to a first semiconductor layer forms a second pad region formed by patterning a second insulating layer. A second pad is formed on the second pad region.

Abstract translation: 提供了一种发光二极管（LED），其中反射金属层的侧表面具有预定的角度，并且可以防止在形成在反射金属层上的导电阻挡层中产生裂纹。 此外，公开了一种使用LED的LED模块。 电连接到第二半导体层的反射图案通过图案化第一绝缘层而被部分地曝光。 因此，通过部分打开的第一焊盘区域形成第一焊盘。 而且，电连接到第一半导体层的导电反射层形成通过图案化第二绝缘层形成的第二焊盘区域。 在第二焊盘区域上形成第二焊盘。

公开(公告)号：US11139338B2

公开(公告)日：2021-10-05

申请号：US16858560

申请日：2020-04-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min Jang ,  Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Hyun A Kim ,  Won Young Roh ,  Min Woo Kang

IPC: H01L27/15 ,  H01L33/60 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20 ,  H01L33/44

Abstract: A light emitting device including a substrate, first and second light emitting diodes disposed thereon and including a first semiconductor layer, an active layer, and a second semiconductor layer, a first upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the first light emitting diode, a second upper electrode electrically connected to the first semiconductor layer and insulated from the second semiconductor layer of the second light emitting diode, in which the first and second light emitting diodes are spaced apart from each other to expose the substrate, the first upper electrode has a protrusion electrically connected to the second semiconductor layer of the second light emitting diode and covering portions of the exposed substrate, the first light emitting diode, and the second light emitting diode, and the second upper electrode has a groove.

公开(公告)号：US10580933B2

公开(公告)日：2020-03-03

申请号：US15971931

申请日：2018-05-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee Oh ,  Jong Kyu Kim ,  Hyun A Kim

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/40 ,  H01L33/62 ,  H01L33/46 ,  H01L33/38 ,  H01L27/15 ,  H01L33/44 ,  H01L33/32

Abstract: Disclosed herein is a highly reliable light emitting diode. In the light emitting diode, a connector connecting light emitting cells to each other is spaced apart from bump pads in a lateral direction so as not to overlap each other. Accordingly, it is possible to provide a chip-scale flip-chip type light emitting diode having good properties in terms of heat dissipation performance and electrical reliability.

公开(公告)号：US09997673B2

公开(公告)日：2018-06-12

申请号：US15685888

申请日：2017-08-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/62 ,  H01L33/60 ,  H01L33/48 ,  H01L33/46 ,  H01L33/44 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first conductive layer disposed on a portion of the second semiconductor layer, a second conductive layer disposed on the second semiconductor layer, and an insulation layer including a first insulating layer and a second insulating layer disposed on the first insulating layer, and overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer, in which the insulation layer has a first region having different thicknesses and a second region having a substantially constant thickness.