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公开(公告)号:US10458014B2
公开(公告)日:2019-10-29
申请号:US15078605
申请日:2016-03-23
申请人: Siva Power, Inc.
IPC分类号: C23C14/24
摘要: In various embodiments, evaporation sources for deposition processes have disposed therearound an insulation material configurable to fit snugly around the source body of the evaporation source and to be at least partially distanced away from the source body to expedite heat transfer therefrom.
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公开(公告)号:US09932666B2
公开(公告)日:2018-04-03
申请号:US15082290
申请日:2016-03-28
申请人: Siva Power, Inc.
IPC分类号: H01L21/00 , C23C14/26 , H01L31/046 , C23C16/448 , F25B39/00 , H01L31/032 , H01L31/18 , H01L51/00 , H01L51/56 , C23C16/02 , C23C16/28 , C23C16/52 , C23C14/24 , C23C14/54 , F25D17/02 , F25B39/02 , H01L21/02
CPC分类号: C23C14/26 , C23C14/24 , C23C14/243 , C23C14/542 , C23C16/0209 , C23C16/28 , C23C16/448 , C23C16/4485 , C23C16/52 , F25B39/00 , F25B39/02 , F25D17/02 , F28D15/00 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0326 , H01L31/046 , H01L31/18 , H01L51/001 , H01L51/56 , Y02E10/541
摘要: In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.
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3.
公开(公告)号:US09816175B2
公开(公告)日:2017-11-14
申请号:US15082302
申请日:2016-03-28
申请人: Siva Power, Inc.
IPC分类号: H01L31/00 , C23C14/26 , H01L31/046 , C23C16/448 , F25B39/00 , H01L31/032 , H01L31/18 , H01L51/00 , H01L51/56 , C23C16/02 , C23C16/28 , C23C16/52 , C23C14/24 , C23C14/54 , F25D17/02 , F25B39/02 , H01L21/02
CPC分类号: C23C14/26 , C23C14/24 , C23C14/243 , C23C14/542 , C23C16/0209 , C23C16/28 , C23C16/448 , C23C16/4485 , C23C16/52 , F25B39/00 , F25B39/02 , F25D17/02 , F28D15/00 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0326 , H01L31/046 , H01L31/18 , H01L51/001 , H01L51/56 , Y02E10/541
摘要: In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.
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公开(公告)号:US20200165717A1
公开(公告)日:2020-05-28
申请号:US16572947
申请日:2019-09-17
申请人: Siva Power, Inc.
IPC分类号: C23C14/24
摘要: In various embodiments, evaporation sources for deposition processes have disposed therearound an insulation material configurable to fit snugly around the source body of the evaporation source and to be at least partially distanced away from the source body to expedite heat transfer therefrom.
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5.
公开(公告)号:US10174417B2
公开(公告)日:2019-01-08
申请号:US15728759
申请日:2017-10-10
申请人: SIVA POWER, INC.
IPC分类号: H01L21/00 , C23C14/26 , H01L31/046 , C23C16/448 , F25B39/00 , H01L31/032 , H01L31/18 , H01L51/00 , H01L51/56 , C23C16/02 , C23C16/28 , C23C16/52 , C23C14/24 , C23C14/54 , F25D17/02 , F28D15/00 , F25B39/02 , H01L21/02
摘要: In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.
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公开(公告)号:US20180245209A1
公开(公告)日:2018-08-30
申请号:US15904647
申请日:2018-02-26
申请人: SIVA POWER, INC.
IPC分类号: C23C14/26 , H01L51/56 , H01L31/046 , H01L31/18 , H01L31/032 , H01L51/00 , C23C14/24 , F28D15/00 , F25D17/02 , F25B39/00 , C23C16/52 , C23C16/448 , C23C16/28 , C23C16/02 , C23C14/54 , F25B39/02 , H01L21/02
CPC分类号: C23C14/26 , C23C14/24 , C23C14/243 , C23C14/542 , C23C16/0209 , C23C16/28 , C23C16/448 , C23C16/4485 , C23C16/52 , F25B39/00 , F25B39/02 , F25D17/02 , F28D15/00 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0326 , H01L31/046 , H01L31/18 , H01L51/001 , H01L51/56 , Y02E10/541
摘要: In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.
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7.THIN-FILM DEPOSITION METHODS WITH THERMAL MANAGEMENT OF EVAPORATION SOURCES 审中-公开
标题翻译: 薄膜沉积方法与蒸发源的热管理公开(公告)号:US20160281211A1
公开(公告)日:2016-09-29
申请号:US15078605
申请日:2016-03-23
申请人: Siva Power, Inc.
IPC分类号: C23C14/24
摘要: In various embodiments, evaporation sources for deposition processes have disposed therearound an insulation material configurable to fit snugly around the source body of the evaporation source and to be at least partially distanced away from the source body to expedite heat transfer therefrom.
摘要翻译: 在各种实施例中,用于沉积工艺的蒸发源在其周围设置绝缘材料,该绝缘材料可配置成紧密地配合在蒸发源的源体周围,并且至少部分地远离源体远离源体以加速从其传热。
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公开(公告)号:US20160281212A1
公开(公告)日:2016-09-29
申请号:US15078626
申请日:2016-03-23
申请人: Siva Power, Inc.
IPC分类号: C23C14/24
CPC分类号: C23C14/243
摘要: In various embodiments, evaporation sources for deposition processes have disposed therearound an insulation material configurable to fit snugly around the source body of the evaporation source and to be at least partially distanced away from the source body to expedite heat transfer therefrom.
摘要翻译: 在各种实施例中,用于沉积工艺的蒸发源在其周围设置绝缘材料,该绝缘材料可配置成紧密地配合在蒸发源的源体周围,并且至少部分地远离源体远离源体以加速从其传热。
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9.THIN-FILM DEPOSITION METHODS WITH FLUID-ASSISTED THERMAL MANAGEMENT OF EVAPORATION SOURCES 有权
标题翻译: 具有流体辅助热蒸发源热管理的薄膜沉积方法公开(公告)号:US20160289817A1
公开(公告)日:2016-10-06
申请号:US15082302
申请日:2016-03-28
申请人: Siva Power, Inc.
IPC分类号: C23C14/26 , F25B39/00 , H01L31/046 , H01L31/18 , H01L51/00 , H01L31/032 , C23C16/448 , H01L51/56
CPC分类号: C23C14/26 , C23C14/24 , C23C14/243 , C23C14/542 , C23C16/0209 , C23C16/28 , C23C16/448 , C23C16/4485 , C23C16/52 , F25B39/00 , F25B39/02 , F25D17/02 , F28D15/00 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0326 , H01L31/046 , H01L31/18 , H01L51/001 , H01L51/56 , Y02E10/541
摘要: In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.
摘要翻译: 在各种实施例中,在沉积薄膜期间,通过基于流体的热管理系统来加热和/或冷却蒸发源。
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10.
公开(公告)号:US20180073127A1
公开(公告)日:2018-03-15
申请号:US15728759
申请日:2017-10-10
申请人: SIVA POWER, INC.
IPC分类号: C23C14/26 , H01L51/56 , H01L31/046 , H01L31/18 , H01L31/032 , H01L51/00 , C23C14/24 , F25D17/02 , F25B39/00 , C23C16/52 , C23C16/448 , C23C16/28 , C23C16/02 , C23C14/54 , F25B39/02 , H01L21/02
CPC分类号: C23C14/26 , C23C14/24 , C23C14/243 , C23C14/542 , C23C16/0209 , C23C16/28 , C23C16/448 , C23C16/4485 , C23C16/52 , F25B39/00 , F25B39/02 , F25D17/02 , F28D15/00 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0326 , H01L31/046 , H01L31/18 , H01L51/001 , H01L51/56 , Y02E10/541
摘要: In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.
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