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公开(公告)号:US20210109708A1
公开(公告)日:2021-04-15
申请号:US17039108
申请日:2020-09-30
Inventor: Rene Peyrard , Fabrice Romain
IPC: G06F7/40
Abstract: An embodiment method for determining a carry digit indicator bit of a first binary datum includes a step for processing of the first binary datum masked by a masking operation, and not including any processing step of the first binary datum.
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公开(公告)号:US12272922B2
公开(公告)日:2025-04-08
申请号:US18408149
申请日:2024-01-09
Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS
Inventor: Fabien Quercia , Jean-Michel Riviere
IPC: H01S5/02345 , H01L23/00
Abstract: Electronic device comprising a support substrate having a mounting face and an electronic chip having a rear face bonded on the mounting face by a volume of adhesive, wherein the support substrate comprises a plurality of wedging elements projecting from the mounting face so as to hold the chip bearing on contact areas of the wedging elements in a position substantially parallel to the mounting face of the support substrate.
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公开(公告)号:US12266613B2
公开(公告)日:2025-04-01
申请号:US17847330
申请日:2022-06-23
Inventor: Claire Laporte , Laurent Schwartz , Godfrey Dimayuga
IPC: H01L23/49 , H01L23/498 , H01L23/538 , H01L23/552
Abstract: A support substrate has a mounting face and a connection face opposite to the mounting face. An electronic chip is mounted to the mounting face and a matrix of connectors is mounted to the connection face. The support substrate includes an interconnection structure formed by a pair of conductive interconnection tracks that electrically connect the electronic chip to the matrix of connectors and circulate differential signals. The two interconnection tracks of the pair of conductive interconnection tracks extend facing each other at different depths of the support substrate. An isolation structure in the support substrate laterally isolates the pair of conductive interconnection tracks. Isolation plates above and below the pair of conductive interconnection tracks provide further isolation.
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公开(公告)号:US12249549B2
公开(公告)日:2025-03-11
申请号:US18630676
申请日:2024-04-09
Applicant: STMicroelectronics (Grenoble 2) SAS
Inventor: Jerome Lopez
Abstract: An encapsulation hood is fastened onto electrically conductive zones of a support substrate using springs. Each spring has a region in contact with an electrically conductive path contained in the encapsulation hood and another region in contact with a corresponding one of the electrically conductive zones. The fastening of the part of the encapsulation hood onto the support substrate compresses the springs and further utilizes a bead of insulating glue located between the compressed springs.
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公开(公告)号:US20250070081A1
公开(公告)日:2025-02-27
申请号:US18947819
申请日:2024-11-14
Applicant: STMicroelectronics (Grenoble 2) SAS
Inventor: David AUCHERE , Asma HAJJI , Fabien QUERCIA , Jerome LOPEZ
IPC: H01L23/00 , H01L23/31 , H01L23/552
Abstract: An electrical connection wire connects an electrical connection pad of an electrical chip and an electrical connection pad of a carrier substrate to which the electronic chip is mounted. A dielectric layer surrounds at least the bonding wire. The dielectric layer may be a dielectric sheath or a hardened liquid dielectric material. A dielectric material may also cover at least a portion of the electrical chip and carrier substrate. A liquid electrically conductive material is deposited and hardened to form a local conductive shield surrounding the dielectric layer at the bonding wire.
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公开(公告)号:US20250004051A1
公开(公告)日:2025-01-02
申请号:US18883619
申请日:2024-09-12
Applicant: STMicroelectronics (Grenoble 2) SAS
Inventor: Mark Trimmer
IPC: G01R31/317 , G01R31/3185 , G06F12/14 , G11C29/10
Abstract: The present disclosure relates to a method wherein a state of an integrated circuit between a first state (e.g., CLOSED), allowing a reading access to the first area of fuse-type non-volatile memory by a processor, and a second state (e.g., OPEN), forbidding the reading access to the memory to the processor, is conditioned to a verification, by a finite state machine, of values of a first fuse word of the memory, representative of a number of transitions to the first state and of a second fuse word of the memory, representative of a number of transitions to the second state.
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公开(公告)号:US20240402778A1
公开(公告)日:2024-12-05
申请号:US18798023
申请日:2024-08-08
Applicant: STMicroelectronics (Grenoble 2) SAS
Inventor: Christophe Lorin , Nathalie Ballot
Abstract: The present disclosure relates to an USB PD-type interface including a first node receiving a first potential, a second node delivering a second potential, and a third node at a reference potential; a resistor connected between a fourth node coupled to the first node, and a fifth node; a MOS transistor connected between the fifth node and the second node; a bipolar transistor having a collector connected to a gate of the MOS transistor and an emitter connected to the fourth node or the fifth node; and a circuit configured to deliver a control potential to a base of the bipolar transistor determined from a current in the first resistor.
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公开(公告)号:US12158483B2
公开(公告)日:2024-12-03
申请号:US18053974
申请日:2022-11-09
Applicant: STMicroelectronics (Grenoble 2) SAS
Inventor: Christophe Lorin
Abstract: In accordance with an embodiment, an integrated circuit chip includes a first input configured to receive a rectified potential and a second input configured to receive a reference potential; a first circuit configured to maintain the rectified potential at a constant value on the first input; a second circuit having a power supply input coupled to the first node; a first resistor series-connected to the first circuit between the second input and the first node, or connected between the first input and the first node; a third circuit connected across the first resistor and configured to deliver a signal which is an image of a current in the first resistor; and a fourth circuit configured to determine a mains frequency and/or a mains voltage based at least on the signal which is the image of the current in the first resistor.
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公开(公告)号:US12148503B2
公开(公告)日:2024-11-19
申请号:US17932694
申请日:2022-09-16
Applicant: STMicroelectronics (Grenoble 2) SAS
Inventor: Xavier Lecoq
Abstract: In an embodiment an integrated circuit includes a non-volatile memory having a plurality of memory cells, wherein each memory cell is configured to store information, and wherein each memory cell is configured to provide a reading current having an intensity dependent on a value stored in the memory cell when the memory cell is selected for reading; and a sense amplifier including a first amplifier configured to amplify the reading current of each memory cell selected for reading, an oscillation generator configured to generate on basis of the amplified signal a signal having oscillations according to a frequency dependent on the intensity of the current of the amplified signal, a counter configured to count the oscillations of the signal generated by the oscillation generator over at least one given period of time and a digital processing circuit configured to determine a value represented by the amplified signal on basis of the value counted during the at least one given period of time using a lookup table between values countable by the counter and values representable by the amplified signal.
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公开(公告)号:US12130651B2
公开(公告)日:2024-10-29
申请号:US17822266
申请日:2022-08-25
Applicant: STMicroelectronics (Grenoble 2) SAS
Inventor: Renald Boulestin
IPC: H03M1/66 , G05F3/26 , H01L27/088 , H01L29/423
CPC classification number: G05F3/262 , H01L27/088 , H01L29/42376 , H03M1/66
Abstract: A current mirror circuit includes a first MOS-type transistor and a second MOS-type transistor assembled as a current mirror, wherein the first transistor has a first gate length different from a second gate length of the second transistor.
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