摘要:
A 3D image display apparatus includes a display panel including a plurality of pixels to display an image and a lenticular lens plate disposed in front of the display panel and including a plurality of lenticular lenses. The pixels are arranged to have an arrangement axis inclined with respect to a vertical axis of the display panel, and the lenticular lenses have a lens axis inclined with respect to the vertical axis of the display panel.
摘要:
A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.
摘要:
A method of treating a soda-lime glass (SLG) substrate includes cleaning the SLG substrate using an alkali cleaning solution and cleaning the cleaned SLG substrate using a plasma process. The SLG substrate is cleaned using the alkali cleaning solution to remove particles adhered to the SLG substrate. Thus, defects due to the adhering particles may be reduced.
摘要:
A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.
摘要:
The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
摘要:
A soda-lime glass substrate formed through a heat-treatment method has an absorption coefficient ranging from about 0.15 λ,W/m·K to about 0.54 λ,W/m·K, and a free path length ranging from about 0.12 cm to about 0.24 cm. The heat-treated soda-lime glass substrate is formed by heating for a selected time at a pre-specified maximum temperature of about 270° C. to about 330° C. so as to remove thermally induced residual deformations from the substrate and then the substrate is slowly cooled so as to substantially avoid reintroducing thermally induced residual deformations into the cooling substrate. Thus, the soda-lime glass substrate is transformed to one at or close to its contraction saturation point. This allows the heat-treated soda-lime glass substrate to serve in a practical way as a substrate of a flat display panel.
摘要:
A 3D image display apparatus includes a display panel including a plurality of pixels to display an image and a lenticular lens plate disposed in front of the display panel and including a plurality of lenticular lenses. The pixels are arranged to have an arrangement axis inclined with respect to a vertical axis of the display panel, and the lenticular lenses have a lens axis inclined with respect to the vertical axis of the display panel.
摘要:
A lens substrate includes a base substrate, a first lens electrode and a first signal line. The base substrate includes a lens area and a peripheral area surrounding the lens area. The first signal line in the peripheral area and includes a layered structure in which a first transparent conductive layer and a metal layer directly contact each other. The first lens electrode is in the lens area and includes the first transparent conductive layer excluding the metal layer. The first signal line is in the peripheral area. The first signal line is connected to the first lens electrode and includes a layered structure in which the first transparent conductive layer and the metal layer directly contact each other.
摘要:
The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
摘要:
A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.