公开(公告)号：US20100163931A1

公开(公告)日：2010-07-01

申请号：US12293643

申请日：2007-03-19

申请人： Hiroshi Fujioka ,  Atsushi Kobayashi ,  Hideyoshi Horie ,  Hidetaka Amanai ,  Satoru Magao

发明人： Hiroshi Fujioka ,  Atsushi Kobayashi ,  Hideyoshi Horie ,  Hidetaka Amanai ,  Satoru Magao

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C23C14/0026 ,  C23C14/0617 ,  C23C14/28 ,  C30B23/02 ,  C30B23/025 ,  C30B29/403 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658

摘要： There is disclosed a hexagonal Group III-V nitride layer exhibiting high quality crystallinity capable of improving the properties of a semiconductor device such as a light emitting element. This nitride layer is a Group III-V nitride layer belonging to hexagonal crystal formed by growth on a substrate having a different lattice constant, which has a growth-plane orientation of {1-100} and in which a full width at half maximum b1 of angle dependence of X-ray diffraction intensity in a {1-210} plane perpendicular to the growth-plane upon X-ray incident angle from a direction parallel to the growth-plane satisfies the condition of 0.01°≦b1≦0.5°, or the full width at half maximum b2 of angle dependence of X-ray diffraction intensity in a {0001} plane upon X-ray incident angle from a direction parallel to the growth-plane satisfies the condition of 0.01°≦b2≦0.5°.

摘要翻译： 公开了能够改善诸如发光元件的半导体器件的性能的显示高质量结晶度的六边形III-V族氮化物层。 该氮化物层是属于六方晶的III-V族氮化物层，其通过在具有不同晶格常数的基板上生长形成，其具有{1-100}的生长面取向，并且其中半峰全宽度b1 在与生长面平行的X射线入射角的垂直于生长面的{1-210}面中的X射线衍射强度的角度依赖性满足条件为0.01°＆lt; nlE; b1＆nlE; 0.5° 或者从与生长面平行的方向的X射线入射角的{0001}面内的X射线衍射强度的角度依赖性的半高度b2的全宽满足0.01°＆lt; N1E; b2＆nlE; 0.5的条件 °。