公开(公告)号：US06607991B1

公开(公告)日：2003-08-19

申请号：US09474399

申请日：1999-12-29

申请人： William R. Livesay ,  Matthew F. Ross ,  Anthony L. Rubiales ,  Heike Thompson ,  Selmer Wong ,  Trey Marlowe ,  Mark Narcy

发明人： William R. Livesay ,  Matthew F. Ross ,  Anthony L. Rubiales ,  Heike Thompson ,  Selmer Wong ,  Trey Marlowe ,  Mark Narcy

IPC分类号： H01L21469

CPC分类号： H01L21/3105 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/316 ,  H01L21/76825 ,  H01L21/76828

摘要： An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured dielectric material is irradiated with electrons of sufficient energy to penetrate the entire thickness of the dielectric material and is simultaneously heated by infrared heaters. By adjusting the process conditions, such as electron beam total dose and energy, temperature of the wafer, and ambient atmosphere, the properties of the cured dielectric material can be modified.

摘要翻译： 描述了一种电子束曝光方法，其提供了固化在半导体晶片上形成的旋涂玻璃或旋涂聚合物电介质材料的方法。 在制造多层集成电路的过程中，电介质材料绝缘导电金属层并平面化形貌。 该方法在软真空环境中利用大面积均匀的电子束曝光系统。 用未固化的介电材料涂覆的晶片被照射具有足够能量的电子以穿透介电材料的整个厚度，同时被红外加热器加热。 通过调整工艺条件，例如电子束总剂量和能量，晶片的温度和环境气氛，可以改变固化的电介质材料的性质。

公开(公告)号：US06358670B1

公开(公告)日：2002-03-19

申请号：US09473373

申请日：1999-12-28

申请人： Selmer Wong ,  Matthew Ross

发明人： Selmer Wong ,  Matthew Ross

IPC分类号： G03C500

CPC分类号： G03F7/40 ,  G03F7/427 ,  Y10S430/143

摘要： A process for increasing the etch resistance of the upper surface of photoresists by a surface-intensive dose of electron beam radiation. Such imparts increased surface etch resistance to the photoresist without causing as much shrinkage in the bulk of the film. A photographic image is produced by imagewise exposing a photographic composition layer on a substrate to activating energy to produce a latent pattern on the layer. This is followed by developing the photographic layer to thereby remove the nonimage areas thereof and leaving the image areas thereof in the form of a pattern on the substrate. The imaged layer is then overall irradiated to electron beam radiation for the full depth of the layer and then overall irradiated to electron beam radiation one or more additional times at a depth which is less than the full depth of the layer.

摘要翻译： 通过表面密集剂量的电子束辐射来提高光致抗蚀剂的上表面的耐蚀刻性的方法。 这样赋予对光致抗蚀剂增加的表面蚀刻阻力，而不会在膜的大部分中产生太多的收缩。 通过在衬底上成像曝光照相组合物层以激活能量以在该层上产生潜在图案来产生摄影图像。 接下来是显影照相层，从而去除其非图像区域，并将图像区域以图案的形式留在基板上。 然后将成像层整体照射到电子束辐射用于层的整个深度，然后在小于该层的整个深度的深度处将其全部照射到电子束辐射一次或多次。

公开(公告)号：US06340556B1

公开(公告)日：2002-01-22

申请号：US09590065

申请日：2000-06-08

申请人： Selmer Wong

发明人： Selmer Wong

IPC分类号： G03C500

CPC分类号： G03F7/40 ,  G03F7/0392 ,  G03F7/2024 ,  Y10S430/143

摘要： A process for decreasing the linewidth of photoresist images which are suitable for use in the production of microelectronic devices such as integrated circuits. A photosensitive composition is coated onto a substrate, exposed to activating energy to decompose the polymer in the imagewise exposed areas; and developed to remove the exposed nonimage areas thus producing a pattern of lines having a linewidth of from about 100 nm to about 200 nm. Then the image areas are controllably irradiated to sufficient electron beam radiation to thereby reduce the linewidth by an amount of from about 5% to about 50%.

摘要翻译： 一种降低光致抗蚀剂图像的线宽的方法，其适用于微电子器件如集成电路的生产。 将光敏组合物涂布在基材上，暴露于活化能以分解图像曝光区域中的聚合物; 并显影以去除曝光的非图像区域，从而产生线宽为约100nm至约200nm的线图案。 然后，图像区域被可控地照射到足够的电子束辐射，从而将线宽减小约5％至约50％。

公开(公告)号：US06319655B1

公开(公告)日：2001-11-20

申请号：US09330710

申请日：1999-06-11

申请人： Selmer Wong ,  Matthew Ross

发明人： Selmer Wong ,  Matthew Ross

IPC分类号： G03F700

CPC分类号： G03F7/40 ,  Y10S430/143

摘要： A process for increasing the etch resistance of photoresists, especially positive working 193 nm sensitive photoresists which are suitable for use in the production of microelectronic devices such as integrated circuits. A 193 nm photosensitive composition is coated onto a substrate, exposed to activating energy at a wavelength of 193 nm to decompose the polymer in the imagewise exposed areas; and developed to remove the exposed nonimage areas. Then the image areas are exposed to sufficient electron beam radiation to increase the resistance of the image areas to an etchant.

摘要翻译： 一种提高光致抗蚀剂的抗蚀刻性的方法，特别是适用于生产微电子器件如集成电路的正性工作的193nm敏感光刻胶。 将193nm光敏组合物涂布在基材上，暴露于波长193nm的活化能，以在图像曝光区域中分解聚合物; 并开发出去除暴露的非图像区域。 然后，图像区域暴露于足够的电子束辐射，以将图像区域的电阻增加到蚀刻剂。