Method for fabricating high-jc thallium-based superconducting tape
    3.
    发明授权
    Method for fabricating high-jc thallium-based superconducting tape 失效
    制造高c铊基超导胶带的方法

    公开(公告)号:US5399312A

    公开(公告)日:1995-03-21

    申请号:US131471

    申请日:1993-10-04

    摘要: A process for fabricating Thallium-based superconducting tapes comprising the steps of: (1) preparing a powder mixture having a nominal composition of (Tl.sub.1-x-y Bi.sub.y Pb.sub.z)(Ba.sub.2-z Sr.sub.z)Ca.sub.2 Cu.sub.3 O.sub.9 ; (2) placing the powder mixture into a silver tube and drawing and/or swaging the silver tube containing the powder mixture into a wire having a pre-determined diameter, wherein x and y are real numbers between 0.2 and 0.4, and z is a real number between 0 and 2; (3) rolling the wire into a tape having a pre-determined thickness; and (4) subjecting the tape to a two-stage single-sintering process at two respective sintering temperatures. The two-stage single-sintering process of the present invention allows Thallium-based superconducting tapes to be fabricated which exhibit substantially increased critical current density, without causing a substantially increased cost and complexity, as do other prior art processes, such as the double-sintering process.

    摘要翻译: 一种制备铊基超导带的方法,包括以下步骤:(1)制备标称组成为(T11-x-yBiyPbz)(Ba2-zSrz)Ca2Cu3O9的粉末混合物; (2)将粉末混合物放入银管中,并将含有粉末混合物的银管拉伸和/或成型为具有预定直径的导线,其中x和y为0.2至0.4之间的实数,z为 0到2之间的实数; (3)将线材轧制成具有预定厚度的带材; 和(4)在两个相应的烧结温度下使带进行两阶段单一烧结工艺。 本发明的两阶段单烧结方法允许制造表现出显着增加的临界电流密度的基于铊的超导带,而不会引起显着增加的成本和复杂性,如其它现有技术方法, 烧结工艺。

    Method to enhance critical temperature of thallium-based superconductors
    5.
    发明授权
    Method to enhance critical temperature of thallium-based superconductors 失效
    提高铊基超导体临界温度的方法

    公开(公告)号:US5376623A

    公开(公告)日:1994-12-27

    申请号:US117497

    申请日:1993-09-07

    IPC分类号: H01L39/24 H01D12/06 H01L39/12

    摘要: Unexpected results were obtained when Tl-1223 and Tl=-2223 superconductive materials were annealed at respectively pre-determined annealing temperatures. The optimum annealing temperatures for Tl-1223 and Tl-2223 superconductive materials are found to be 860.degree. C. and 820.degree. C., respectively. By incorporating the optimum annealing temperature and an optimum annealing envirenment, which is expressed in terms of oxygen partial pressure, into the manufacturing process, the present invention presents a method which can substantially increase the critical temperature of thallium based superconductive materials with greatly reduced annealing time and with improved reproducibility, and is thus superior to any method disclosed in the prior art.

    摘要翻译: 当Tl-1223和Tl = -2223超导材料分别在预定的退火温度下退火时,获得了意想不到的结果。 Tl-1223和Tl-2223超导材料的最佳退火温度分别为860℃和820℃。 通过将最佳退火温度和以氧分压表示的最佳退火环境纳入制造过程中,本发明提出了一种可以显着提高铊基超导材料的临界温度并大大降低退火时间的方法 并且具有改进的再现性,因此优于现有技术中公开的任何方法。