公开(公告)号：US5731070A

公开(公告)日：1998-03-24

申请号：US575527

申请日：1995-12-20

申请人： Daizo Endo ,  Masato Fukushima ,  Shin-ichi Ogawa

发明人： Daizo Endo ,  Masato Fukushima ,  Shin-ichi Ogawa

IPC分类号： G11B5/73 ,  G11B5/66

CPC分类号： G11B5/7325 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/12674 ,  Y10T428/12875 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678

摘要： A magnetic recording medium comprised of (i) a non-magnetic substrate such as glass or carbon, (ii) a silicon layer preferably having a thickness of about 20-3,000 angstroms, formed on the substrate, (iii) a layer composed of at least one element of the platinum group of the periodic table or its alloy or carbon, formed on the silicon layer, wherein the platinum group element or alloy is at least partially silicified with silicon diffusing from the adjacent silicon layer, and the carbon is rendered at least partially amorphous with silicon diffusing from the adjacent silicon layer, (iv) an undercoat composed of chromium or its alloy, formed on the layer of a platinum group element or alloy or carbon, (v) a magnetic layer composed of a cobalt alloy, formed on the undercoat, (vi) a protective carbon overcoat formed on the magnetic layer, and (vii) an optional lubricating layer formed on the protective overcoat.

摘要翻译： 一种磁记录介质，包括（i）诸如玻璃或碳之类的非磁性基底，（ii）优选地具有约20-3,000埃厚度的硅层，其形成在所述基底上，（iii）由 形成在硅层上的元素周期表的铂族元素或其合金或碳中的至少一种元素，其中铂族元素或合金至少部分地硅化硅，从邻近的硅层扩散硅，碳 （iv）由铂或其合金形成的底层，其形成在铂族元素或合金或碳的层上，（v）由钴合金构成的磁性层， 形成在底涂层上，（vi）形成在磁性层上的保护性碳外涂层，和（vii）形成在保护性外涂层上的任选的润滑层。

公开(公告)号：US06949552B2

公开(公告)日：2005-09-27

申请号：US10311429

申请日：2001-06-27

申请人： Atsuro Nakazato ,  Shigeyuki Chaki ,  Taketoshi Okubo ,  Shin-ichi Ogawa ,  Takaaki Ishii

发明人： Atsuro Nakazato ,  Shigeyuki Chaki ,  Taketoshi Okubo ,  Shin-ichi Ogawa ,  Takaaki Ishii

IPC分类号： A61K31/495 ,  A61K31/496 ,  A61K45/06 ,  A61P25/22 ,  A61P25/24 ,  C07D295/125 ,  C07D401/06 ,  C07D403/06 ,  C07D413/14

CPC分类号： C07D295/125 ,  A61K31/495 ,  A61K31/496 ,  A61K45/06 ,  C07C2601/02 ,  C07C2601/08 ,  C07C2601/14

摘要： There are provided a therapeutic preparation for anxiety neurosis or depression which comprises a MC4 receptor antagonist as an effective ingredient; and a piperazine derivative represented by Formula [1]: [wherein Ar1 is a phenyl group, a substituted phenyl group, a naphthyl group or a substituted naphthyl group; Ar2 is a naphthyl group, a substituted naphthyl group, a quinolyl group, a group represented by the formula: (wherein R4 is a hydrogen atom or a halogen atom; and X—Y is CH—NH, CH—O, CH—S or N—O) or a group represented by the formula: (wherein R5 is a hydrogen atom, a hydroxyl group or a C1-10 alkoxy group); R1 is a hydrogen atom, a C1-10 alkyl group, a C3-8 cycloalkyl group, a C3-10 alkenyl group, a phenyl group, a 1-cyanoethyl group, a pyrimidin-2-yl group or an amidyl group; R2 and R3 are the same or different, and are each a hydrogen atom or a C1-10 alkyl group; A-B is N—CH2, CH—CH2, C(OH)—CH2 or C═CH; T1 is a single bond, —N(R6)— (wherein R6 is a hydrogen atom or a C1-10 alkyl group), —O—, —CH═CH— or —C(═O)—; n is an integer of from 1 to 10 and when T1 is a single bond, —CH═CH— or —C(═O)—, n is an integer of from 2 to 10 when T1 is —N(R6)— or —O—], or a pharmaceutically acceptable salt thereof.

摘要翻译： 提供焦虑性神经症或抑郁症的治疗剂，其包含作为有效成分的MC 4受体拮抗剂; 和由式[1]表示的哌嗪衍生物：其中Ar 1是苯基，取代的苯基，萘基或取代的萘基; Ar 2是萘基，取代的萘基，喹啉基，由下式表示的基团：（其中R 4是氢原子或卤素原子; 并且XY是CH-NH，CH-O，CH-S或NO）或由下式表示的基团：（其中R 5是氢原子，羟基或C 1-10个烷氧基）; R 1是氢原子，C 1-10烷基，C 3-8环烷基，C 3 -10个链烯基，苯基，1-氰基乙基，嘧啶-2-基或酰氨基; R 2和R 3相同或不同，并且各自为氢原子或C 1-10烷基; A-B是N-CH 2，CH-CH 2，C（OH）-CH 2或C-CH; T 1是单键，-N（R 6） - （其中R 6是氢原子或C 1 -10个烷基），-O - ， - CH-CH-或-C（ - O） - ; n是1〜10的整数，当T 1是单键时，-CH-CH-或-C（-O） - ，n是2〜10的整数，当T 或其药学上可接受的盐，其中R 1是-N（R 6） - 或-O-]。

公开(公告)号：US06468428B1

公开(公告)日：2002-10-22

申请号：US08930536

申请日：1997-10-27

申请人： Yoshikazu Nishii ,  Nobuhiro Maeda ,  Shin-ichi Ogawa ,  Yoichi Hachitani ,  Masayuki Higashida ,  Itaru Watanabe

发明人： Yoshikazu Nishii ,  Nobuhiro Maeda ,  Shin-ichi Ogawa ,  Yoichi Hachitani ,  Masayuki Higashida ,  Itaru Watanabe

IPC分类号： B01D2911

CPC分类号： B01D53/88 ,  B01D53/885 ,  B01D53/94 ,  B01D2255/802 ,  B01J35/004 ,  B01J35/06 ,  C03C3/083 ,  C03C13/00 ,  C03C25/1061 ,  C03C25/42 ,  F01N3/2086 ,  G02B6/0001 ,  G02B6/04 ,  Y02T10/26

摘要： A photocatalyst is carried on a surface of a light guiding body for guiding light needed to activate the photocatalyst in such a manner the light guided by the light guiding body irradiates directly from the surface of the light guiding body the photocatalyst.

摘要翻译： 在导光体的表面上承载光催化剂，用于引导光催化剂所需的光，导光体引导的光直接从光导体的表面照射光催化剂。

公开(公告)号：US5914152A

公开(公告)日：1999-06-22

申请号：US966026

申请日：1997-11-07

申请人： Daizo Endo ,  Masato Fukushima ,  Shin-ichi Ogawa

发明人： Daizo Endo ,  Masato Fukushima ,  Shin-ichi Ogawa

IPC分类号： G11B5/73 ,  G11B5/85

CPC分类号： G11B5/7325 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/12674 ,  Y10T428/12875 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30 ,  Y10T428/31678

摘要： A magnetic recording medium comprised of (i) a non-magnetic substrate such as glass or carbon, (ii) a silicon layer preferably having a thickness of about 20-3,000 angstroms, formed on the substrate, (iii) a layer composed of at least one element of the platinum group of the periodic table or its alloy or carbon, formed on the silicon layer, wherein the platinum group element or alloy is at least partially silicified with silicon diffusing from the adjacent silicon layer, and the carbon is rendered at least partially amorphous with silicon diffusing from the adjacent silicon layer, (iv) an undercoat composed of chromium or its alloy, formed on the layer of a platinum group element or alloy or carbon, (v) a magnetic layer composed of a cobalt alloy, formed on the undercoat, (vi) a protective carbon overcoat formed on the magnetic layer, and (vii) an optional lubricating layer formed on the protective overcoat.

摘要翻译： 一种磁记录介质，包括（i）诸如玻璃或碳之类的非磁性基底，（ii）优选地具有约20-3,000埃厚度的硅层，其形成在所述基底上，（iii）由 形成在硅层上的元素周期表的铂族元素或其合金或碳中的至少一种元素，其中铂族元素或合金至少部分地硅化硅，从邻近的硅层扩散硅，碳 （iv）由铂或其合金形成的底层，其形成在铂族元素或合金或碳的层上，（v）由钴合金构成的磁性层， 形成在底涂层上，（vi）形成在磁性层上的保护性碳外涂层，和（vii）形成在保护性外涂层上的任选的润滑层。

公开(公告)号：US5582878A

公开(公告)日：1996-12-10

申请号：US621450

申请日：1996-03-25

申请人： Shin-ichi Ogawa ,  Hiroshi Ohsawa ,  Hideo Yashima

发明人： Shin-ichi Ogawa ,  Hiroshi Ohsawa ,  Hideo Yashima

IPC分类号： G11B5/84 ,  B05D3/00

CPC分类号： G11B5/8404

摘要： A magnetic recording medium having an improved CSS characteristics is made by a process including a surface texture treatment step of either (1) focusing an ultraviolet laser beam in a ring-shaped band, or (2) focusing a pulsed ultraviolet laser beam at an energy density of at least 0.01 J/cm.sup.2 but lower than the threshold level successively at least two times but up to 1,000 times, on a substrate composed of glass or silicon, followed by the formation of an undercoat, a magnetic layer, and a protective coating in this order on the surface-textured substrate.

摘要翻译： 具有改进的CSS特性的磁记录介质通过包括（1）将紫外激光束聚焦在环带中的表面纹理处理步骤或（2）以脉冲紫外激光束聚焦的能量 在由玻璃或硅构成的基板上，至少为0.01J / cm 2且低于阈值水平的密度为至少两倍但高达1,000倍，然后形成底涂层，磁性层和保护涂层 在表面纹理化衬底上。

公开(公告)号：US4596604A

公开(公告)日：1986-06-24

申请号：US661709

申请日：1984-10-17

申请人： Shigenobu Akiyama ,  Yasuaki Terui ,  Shin-ichi Ogawa

发明人： Shigenobu Akiyama ,  Yasuaki Terui ,  Shin-ichi Ogawa

IPC分类号： H01L27/00 ,  H01L21/20 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/265 ,  C30B33/00

CPC分类号： H01L21/8221 ,  Y10S438/98

摘要： A method of obtaining a multilayer semiconductor device by forming a semiconductor crystallized layer through an insulative material over a semiconductor substrate in which a semiconductor device is formed. The insulative material is formed on the semiconductor substrate in which the semiconductor device is fabricated and a first semiconductor layer is formed on the insulative material. Thereafter, the surface of the first semiconductor layer is planarized and an insulative material is formed on this planarized surface, then a second semiconductor layer is formed on this insulative material. Next, the second semiconductor layer is crystallized by the irradiation of an energy beam, thereby fabricating a device in the second crystallized semiconductor layer.

摘要翻译： 一种通过在形成有半导体器件的半导体衬底上的绝缘材料形成半导体结晶层来获得多层半导体器件的方法。 绝缘材料形成在其上制造半导体器件的半导体衬底上，并且在绝缘材料上形成第一半导体层。 此后，第一半导体层的表面被平坦化，并且在该平坦化表面上形成绝缘材料，然后在该绝缘材料上形成第二半导体层。 接下来，通过照射能量束使第二半导体层结晶，从而在第二结晶半导体层中制造器件。

公开(公告)号：US4115796A

公开(公告)日：1978-09-19

申请号：US784715

申请日：1977-04-05

申请人： Takeo Fujimoto ,  Yasuo Torimaru ,  Shin-ichi Ogawa ,  Shinya Yasue

发明人： Takeo Fujimoto ,  Yasuo Torimaru ,  Shin-ichi Ogawa ,  Shinya Yasue

IPC分类号： H01L27/088 ,  H01L27/092 ,  H01L27/04

CPC分类号： H01L27/088 ,  H01L27/0927

摘要： Formation of well-regions of a conductivity type opposite to that of a substrate is achieved in such a manner to determine a first threshold voltage level. Ion implantation is effected on desirably selected gates in the respective channels formed on the substrate and the well-regions. Two channels on the ion implanted substrate and on the well-region in which the ion implantation is not effected, are coupled to form a complementary-MOS transistor pair having a first threshold voltage level. The channels on the substrate in which the ion implantation is not effected and on the ion implanted well-region are coupled to form another complementary-MOS transistor pair having a second threshold voltage level.

摘要翻译： 以确定第一阈值电压电平的方式实现与基板的导电类型相反的导电类型的阱区的形成。 在形成在衬底和阱区上的相应沟道中的期望选择的栅极上实现离子注入。 离子注入基板上的两个通道和不影响离子注入的阱区被耦合以形成具有第一阈值电压电平的互补MOS晶体管对。 不影响离子注入的衬底上的通道和离子注入的阱区被耦合以形成具有第二阈值电压电平的另一个互补MOS晶体管对。