POWER SUPPLY DEVICE, CONTROL CIRCUIT, ELECTRONIC DEVICE AND CONTROL METHOD FOR POWER SUPPLY
    1.
    发明申请
    POWER SUPPLY DEVICE, CONTROL CIRCUIT, ELECTRONIC DEVICE AND CONTROL METHOD FOR POWER SUPPLY 有权
    电源装置,控制电路,电子装置及电源控制方法

    公开(公告)号:US20120306465A1

    公开(公告)日:2012-12-06

    申请号:US13471604

    申请日:2012-05-15

    IPC分类号: G05F1/46

    摘要: A power supply device that includes a switch circuit to which an input voltage is supplied, a coil coupled between the switch circuit and an output terminal from which an output voltage is outputted. A voltage adding circuit adds a slope voltage to a reference voltage. A control unit compares a feedback voltage corresponding to the output voltage and the reference voltage and switches the switch circuit at a timing corresponding to a comparison result of the feedback voltage and the reference voltage. A slope adjustment circuit differentiates a current flowing in the coil and adjusts a slope amount of the slope based on a differentiation result of the current.

    摘要翻译: 一种电源装置,包括提供输入电压的开关电路,耦合在开关电路和输出端之间的线圈,输出端从输出端输出。 电压加法电路将斜率电压加到基准电压上。 控制单元将对应于输出电压的反馈电压和参考电压进行比较,并在与反馈电压和参考电压的比较结果相对应的定时切换开关电路。 斜率调整电路对流过线圈的电流进行微分,并根据电流的微分结果调整斜率的斜率。

    Horizontal MOS transistor
    2.
    发明授权
    Horizontal MOS transistor 失效
    水平MOS晶体管

    公开(公告)号:US07075159B2

    公开(公告)日:2006-07-11

    申请号:US10911630

    申请日:2004-08-05

    摘要: This invention provides a horizontal MOS transistor capable of improving current drivability and reducing ON resistance by optimizing the gate wiring structure and the disposition structure of source/drain layers. First gate wirings are disposed in the X direction at a pitch Y1 in the Y direction and second gate wirings 12 are disposed in the Y direction with two pieces as a pair such that they meander at a pitch X1 in the X direction. The meandering of the second gate wiring 12 is formed so as to sandwich the bent portions 14 substantially in the center of the pitch Y1. A bottle-like shape diffusion layer region in which the wide-width region and narrow-width region are combined is sectioned by adjacent first and second wirings. A contact 16 for connecting the diffusion layer region to the wiring layer 18 is disposed in the wide-width region and wiring layers 18 are disposed such that two rows run in parallel in the X direction. A diffusion layer region is a different electrode region from diffusion layer regions adjacent on four sides thereby forming a MOS transistor. Consequently, a horizontal MOS transistor excellent in current drivability for each unit region and having a slight ON resistance is constructed.

    摘要翻译: 本发明提供一种水平MOS晶体管,其能够通过优化栅极布线结构和源极/漏极层的配置结构来改善电流驱动能力并降低导通电阻。 第一栅极布线沿Y方向以​​间距Y 1在X方向上设置,第二栅极布线12沿着Y方向设置成两对,使得它们以X方向上的间距X 1弯曲。 第二栅极布线12的曲折形成为将弯曲部14大致夹在间距Y 1的中心。 其宽度区域和窄宽度区域组合的瓶状形状扩散层区域被相邻的第一和第二配线分段。 用于将扩散层区域连接到布线层18的触点16设置在宽幅区域中,布线层18被布置成使得两行在X方向上平行地延伸。 扩散层区域是与四边相邻的扩散层区域的不同的电极区域,从而形成MOS晶体管。 因此,构成了对每个单位区域的电流驱动性优异且具有轻微的导通电阻的水平MOS晶体管。

    Horizontal MOS transistor
    3.
    发明申请
    Horizontal MOS transistor 失效
    水平MOS晶体管

    公开(公告)号:US20050212012A1

    公开(公告)日:2005-09-29

    申请号:US10911630

    申请日:2004-08-05

    摘要: This invention provides a horizontal MOS transistor capable of improving current drivability and reducing ON resistance by optimizing the gate wiring structure and the disposition structure of source/drain layers. First gate wirings are disposed in the X direction at a pitch Y1 in the Y direction and second gate wirings 12 are disposed in the Y direction with two pieces as a pair such that they meander at a pitch X1 in the X direction. The meandering of the second gate wiring 12 is formed so as to sandwich the bent portions 14 substantially in the center of the pitch Y1. A bottle-like shape diffusion layer region in which the wide-width region and narrow-width region are combined is sectioned by adjacent first and second wirings. A contact 16 for connecting the diffusion layer region to the wiring layer 18 is disposed in the wide-width region and wiring layers 18 are disposed such that two rows run in parallel in the X direction. A diffusion layer region is a different electrode region from diffusion layer regions adjacent on four sides thereby forming a MOS transistor. Consequently, a horizontal MOS transistor excellent in current drivability for each unit region and having a slight ON resistance is constructed.

    摘要翻译: 本发明提供一种水平MOS晶体管,其能够通过优化栅极布线结构和源极/漏极层的配置结构来改善电流驱动能力并降低导通电阻。 第一栅极布线沿Y方向以​​间距Y 1在X方向上设置,第二栅极布线12沿着Y方向设置成两对,使得它们以X方向上的间距X 1弯曲。 第二栅极布线12的曲折形成为将弯曲部14大致夹在间距Y 1的中心。 其宽度区域和窄宽度区域组合的瓶状形状扩散层区域被相邻的第一和第二配线分段。 用于将扩散层区域连接到布线层18的触点16设置在宽幅区域中,布线层18被布置成使得两行在X方向上平行地延伸。 扩散层区域是与四边相邻的扩散层区域的不同的电极区域,从而形成MOS晶体管。 因此,构成了对每个单位区域的电流驱动性优异且具有轻微的导通电阻的水平MOS晶体管。

    Power supply device, control circuit, electronic device and control method for power supply
    4.
    发明授权
    Power supply device, control circuit, electronic device and control method for power supply 有权
    电源装置,控制电路,电子装置及电源控制方法

    公开(公告)号:US08593126B2

    公开(公告)日:2013-11-26

    申请号:US13471604

    申请日:2012-05-15

    IPC分类号: G05F1/575 G05F1/618

    摘要: A power supply device that includes a switch circuit to which an input voltage is supplied, a coil coupled between the switch circuit and an output terminal from which an output voltage is outputted. A voltage adding circuit adds a slope voltage to a reference voltage. A control unit compares a feedback voltage corresponding to the output voltage and the reference voltage and switches the switch circuit at a timing corresponding to a comparison result of the feedback voltage and the reference voltage. A slope adjustment circuit differentiates a current flowing in the coil and adjusts a slope amount of the slope based on a differentiation result of the current.

    摘要翻译: 一种电源装置,包括提供输入电压的开关电路,耦合在开关电路和输出端之间的线圈,输出端从输出端输出。 电压加法电路将斜率电压加到基准电压上。 控制单元将对应于输出电压的反馈电压和参考电压进行比较,并在与反馈电压和参考电压的比较结果相对应的定时切换开关电路。 斜率调整电路对流过线圈的电流进行微分,并根据电流的微分结果调整斜率的斜率。