公开(公告)号：US20130313547A1

公开(公告)日：2013-11-28

申请号：US13729495

申请日：2012-12-28

申请人： Shintaro NAKANO ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

发明人： Shintaro NAKANO ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

IPC分类号： H01L51/52

CPC分类号： H01L51/5203 ,  H01L27/1248 ,  H01L27/3262 ,  H01L51/5253 ,  H01L51/5256

摘要： According to one embodiment, a display device includes a substrate, a thin film transistor, a pixel electrode, an organic light emitting layer, a common electrode, and a sealing unit. The thin film transistor is provided on the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The common electrode is provided on the organic light emitting layer. The sealing unit is provided on the common electrode. The sealing unit includes a first sealing film and a second sealing film. A refractive index of the second sealing film is different from a refractive index of the first sealing film.

摘要翻译： 根据一个实施例，显示装置包括基板，薄膜晶体管，像素电极，有机发光层，公共电极和密封单元。 薄膜晶体管设置在基板上。 薄膜晶体管包括栅电极，栅极绝缘膜，半导体膜，第一导电部分和第二导电部分。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 公共电极设置在有机发光层上。 密封单元设置在公共电极上。 密封单元包括第一密封膜和第二密封膜。 第二密封膜的折射率与第一密封膜的折射率不同。

公开(公告)号：US20130078752A1

公开(公告)日：2013-03-28

申请号：US13483672

申请日：2012-05-30

申请人： Tatsunori SAKANO ,  Kentaro MIURA ,  Nobuyoshi SAITO ,  Shintaro NAKANO ,  Tomomasa UEDA ,  Hajime YAMAGUCHI

发明人： Tatsunori SAKANO ,  Kentaro MIURA ,  Nobuyoshi SAITO ,  Shintaro NAKANO ,  Tomomasa UEDA ,  Hajime YAMAGUCHI

IPC分类号： H01L33/08

CPC分类号： H05K3/10 ,  G02F1/133305 ,  G02F1/1362 ,  H01L27/1266 ,  H01L2227/326

摘要： According to one embodiment, a method is disclosed for manufacturing a display device. A film material layer is formed on a support substrate. A first heating process for the film material layer at a first temperature to form a film layer and a second heating process for a second region surrounding a first region at a second temperature higher than the first temperature are performed. The first region is provided in a central part of the film layer. A display layer is formed in the first region and a peripheral circuit section is formed at least in a part of the second region. A third heating process is performed for at least a part of the film layer at a third temperature higher than the second temperature. In addition, the film layer is peeled off from the support substrate.

公开(公告)号：US20130075719A1

公开(公告)日：2013-03-28

申请号：US13483593

申请日：2012-05-30

申请人： Shintaro NAKANO ,  Tomomasa UEDA ,  Kentaro MIURA ,  Nobuyoshi SAITO ,  Tatsunori SAKANO ,  Hajime YAMAGUCHI

发明人： Shintaro NAKANO ,  Tomomasa UEDA ,  Kentaro MIURA ,  Nobuyoshi SAITO ,  Tatsunori SAKANO ,  Hajime YAMAGUCHI

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/12 ,  H01L29/22 ,  B82Y99/00

CPC分类号： H01L29/7869 ,  H01L21/02266 ,  H01L21/02565 ,  H01L27/3244 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L51/0096 ,  H01L2251/5338

摘要： According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×1020 atm/cm3, and not more than 1019 atm/cm3, respectively.

公开(公告)号：US20130313545A1

公开(公告)日：2013-11-28

申请号：US13724294

申请日：2012-12-21

申请人： Nobuyoshi SAITO ,  Kentaro MIURA ,  Shintaro NAKANO ,  Tatsunori SAKANO ,  Tomomasa UEDA ,  Hajime YAMAGUCHI

发明人： Nobuyoshi SAITO ,  Kentaro MIURA ,  Shintaro NAKANO ,  Tatsunori SAKANO ,  Tomomasa UEDA ,  Hajime YAMAGUCHI

IPC分类号： H01L51/52 ,  H01L29/786

CPC分类号： H01L51/5203 ,  H01L27/3262 ,  H01L29/7869

摘要： According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.

摘要翻译： 根据一个实施例，显示装置包括基板，薄膜晶体管，钝化膜，氢阻挡膜，像素电极，有机发光层，相对电极和密封膜。 薄膜晶体管设置在基板的主表面上。 薄膜晶体管包括栅电极，栅极绝缘膜，半导体膜，第一导电部分和第二导电部分。 钝化膜设置在薄膜晶体管上。 氢屏障膜设置在钝化膜上。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 密封膜设置在氢阻挡膜和相对电极上。