High-frequency amplifier
    3.
    发明授权
    High-frequency amplifier 失效
    高频放大器

    公开(公告)号:US06750720B1

    公开(公告)日:2004-06-15

    申请号:US10149390

    申请日:2002-06-12

    IPC分类号: H03F304

    摘要: Between resistors 13, 14 and an NPN bipolar transistor 12 are interposed PNP bipolar transistors 21, 22 forming a current mirror 20 that uses a collector current of the NPN bipolar transistor 12 as a reference current, and determines a collector current of an NPN bipolar transistor 11. This makes possible to design a size ratio A of the PNP bipolar transistors 21, 22 so as to approximate a voltage drop &Dgr;Vb to a value close to zero, and to suppress the voltage drop &Dgr;Vb of the base voltage Vb accordingly to achieve a high power output and high efficiency when a high frequency input signal Pin increases and generates a base rectified current.

    摘要翻译: 在电阻器13,14和NPN双极晶体管12之间插入形成使用NPN双极晶体管12的集电极电流作为参考电流的电流镜20的PNP双极晶体管21,22,并且确定NPN双极晶体管的集电极电流 这使得可以设计PNP双极晶体管21,22的尺寸比A,以将电压降ΔVV近似为接近于零的值,并且相应地抑制基极电压Vb的电压降DeltaVb以实现 当高频输入信号Pin增加并产生基极整流电流时,高功率输出和高效率。