公开(公告)号：US06750720B1

公开(公告)日：2004-06-15

申请号：US10149390

申请日：2002-06-12

申请人： Kazutomi Mori ,  Shintarou Shinjo ,  Hiroyuki Joba ,  Yoshinori Takahashi ,  Yukio Ikeda ,  Tadashi Takagi

发明人： Kazutomi Mori ,  Shintarou Shinjo ,  Hiroyuki Joba ,  Yoshinori Takahashi ,  Yukio Ikeda ,  Tadashi Takagi

IPC分类号： H03F304

CPC分类号： H03F1/0261 ,  H03F1/302 ,  H03F3/19 ,  H03F3/343

摘要： Between resistors 13, 14 and an NPN bipolar transistor 12 are interposed PNP bipolar transistors 21, 22 forming a current mirror 20 that uses a collector current of the NPN bipolar transistor 12 as a reference current, and determines a collector current of an NPN bipolar transistor 11. This makes possible to design a size ratio A of the PNP bipolar transistors 21, 22 so as to approximate a voltage drop &Dgr;Vb to a value close to zero, and to suppress the voltage drop &Dgr;Vb of the base voltage Vb accordingly to achieve a high power output and high efficiency when a high frequency input signal Pin increases and generates a base rectified current.

摘要翻译： 在电阻器13,14和NPN双极晶体管12之间插入形成使用NPN双极晶体管12的集电极电流作为参考电流的电流镜20的PNP双极晶体管21,22，并且确定NPN双极晶体管的集电极电流 这使得可以设计PNP双极晶体管21,22的尺寸比A，以将电压降ΔVV近似为接近于零的值，并且相应地抑制基极电压Vb的电压降DeltaVb以实现 当高频输入信号Pin增加并产生基极整流电流时，高功率输出和高效率。

公开(公告)号：US06674341B2

公开(公告)日：2004-01-06

申请号：US10220150

申请日：2002-08-27

申请人： Morishige Hieda ,  Kenichi Miyaguchi ,  Kazutomi Mori ,  Michiaki Kasahara ,  Tadashi Takagi ,  Hiroshi Ikematsu ,  Norio Takeuchi ,  Hiromasa Nakaguro ,  Kazuyoshi Inami

发明人： Morishige Hieda ,  Kenichi Miyaguchi ,  Kazutomi Mori ,  Michiaki Kasahara ,  Tadashi Takagi ,  Hiroshi Ikematsu ,  Norio Takeuchi ,  Hiromasa Nakaguro ,  Kazuyoshi Inami

IPC分类号： H01P118

CPC分类号： H03H11/18 ,  H03H11/20

摘要： A miniaturized phase shifter and a multi-bit phase shifter are provided, in which filters are constructed using capacitors at FET pinch-off and pass phase can be shifted by turning the FET on and off, the phase shifter including: a first FET having a drain electrode connected to an input terminal and a source electrode connected to an output terminal; a second FET, in which one of a drain electrode and a source electrode thereof is connected to the source electrode of the first FET and the other is connected to ground via a first inductor; and a third FET, in which one of a drain electrode and a source electrode thereof is connected to the drain electrode of the first FET and the other is connected to ground via a second inductor.

摘要翻译： 提供了一种小型化移相器和多位移相器，其中使用FET夹断电容器构建滤波器，并且可以通过打开和关闭FET来移动通过相位，该移相器包括：第一FET，具有 漏极连接到输入端子，源电极连接到输出端子; 第二FET，其漏极电极和源电极中的一个连接到第一FET的源电极，另一个通过第一电感器连接到地; 以及第三FET，其中漏电极和源电极中的一个连接到第一FET的漏电极，另一个通过第二电感器连接到地。

公开(公告)号：US06861906B2

公开(公告)日：2005-03-01

申请号：US10204446

申请日：2001-05-11

申请人： Kazutomi Mori ,  Shintaro Shinjo ,  Kousei Maemura ,  Teruyuki Shimura ,  Kazuhiko Nakahara ,  Tadashi Takagi

发明人： Kazutomi Mori ,  Shintaro Shinjo ,  Kousei Maemura ,  Teruyuki Shimura ,  Kazuhiko Nakahara ,  Tadashi Takagi

IPC分类号： H01L27/06 ,  H03F3/19 ,  H03F3/21 ,  H03F3/68

CPC分类号： H01L27/0605 ,  H03F3/19 ,  H03F3/211 ,  H03F2203/21178

摘要： A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.

摘要翻译： 根据本发明的高频半导体器件实现了噪声特性的降低和增益的降低的改善，并且在抑制电流到多焦HBT的浓度的同时，提高了功率效率的降低。 在构成放大器10的第一级和输出级的多画面HBT中，构成对应于第一级的多画面HBT 12的基本HBT 14分别由连接到相应发射极的HBT 14a和发射极电阻14b组成 而构成与输出级相对应的多功能HBT16的基本HBT 18分别由连接到HBT 18a的相应基座的HBT 18a和基极电阻18c组成。 根据本发明的高频半导体器件可用作卫星通信，地面微波通信，移动通信等中使用的高输出功率放大器。

公开(公告)号：US06784743B2

公开(公告)日：2004-08-31

申请号：US10182397

申请日：2002-07-30

申请人： Eiji Taniguchi ,  Noriharu Suematsu ,  Chiemi Sawaumi ,  Kenichi Maeda ,  Takayuki Ikushima ,  Hiroyuki Joba ,  Tadashi Takagi

发明人： Eiji Taniguchi ,  Noriharu Suematsu ,  Chiemi Sawaumi ,  Kenichi Maeda ,  Takayuki Ikushima ,  Hiroyuki Joba ,  Tadashi Takagi

IPC分类号： H03F319

CPC分类号： H03F3/72 ,  H03D7/1408 ,  H03D7/1433 ,  H03D7/1458 ,  H03D7/1491 ,  H03D2200/0033 ,  H03D2200/0043 ,  H03F1/302 ,  H03F3/19 ,  H03F3/45089 ,  H03F2200/249 ,  H03F2200/301 ,  H03F2200/492 ,  H03F2200/54 ,  H03F2203/7206

摘要： A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.

摘要翻译： 使用公共发射极双极晶体管的高频放大器，并且切换恒流源和恒压源，以根据高电平的功率电平向双极晶体管的基极端施加DC偏置 输入到双极晶体管的高频信号或从其输出的高频信号的功率电平，以及混频器，其中DC偏压被施加到用于输入高频信号的双极晶体管中的至少一个的基极，以及 用于通过使用将DC偏压施加到在高频放大器中使用的放大双极晶体管的基极的配置来输入本地振荡波的双极晶体管。

公开(公告)号：US06462622B1

公开(公告)日：2002-10-08

申请号：US09988326

申请日：2001-11-19

申请人： Kazutomi Mori ,  Kazuhisa Yamauchi ,  Koji Yamanaka ,  Kazuhiko Nakahara ,  Tadashi Takagi

发明人： Kazutomi Mori ,  Kazuhisa Yamauchi ,  Koji Yamanaka ,  Kazuhiko Nakahara ,  Tadashi Takagi

IPC分类号： H03F304

CPC分类号： H03F1/3205 ,  H03F3/1935 ,  H03F2200/294 ,  H03F2200/372

摘要： A T-type circuit having series resistors and a parallel resistor is arranged on the outside of an amplifier, a signal is amplified in the amplifier while stabilizing the signal by using the T-type circuit functioning as a stabilizing circuit, and the amplified signal is output. In this case, values of the series resistors and the parallel resistor of the T-type circuit are determined so as to set an output load impedance obtained by seeing the output side of the high-frequency amplifier from the amplifier to a value near to or slightly lower than a value of the conjugate complex impedance of an output impedance of the amplifier. Therefore, the output signal having a high output electric power and a low distortion can be obtained in the high-frequency amplifier while keeping a gain and a noise characteristic of the high-frequency amplifier.

摘要翻译： 具有串联电阻器和并联电阻器的T型电路布置在放大器的外部，通过使用用作稳定电路的T型电路稳定信号，放大器中的信号被放大，放大的信号为 输出。 在这种情况下，确定T型电路的串联电阻器和并联电阻器的值，​​以便将通过从放大器看到高频放大器的输出侧而获得的输出负载阻抗设置为接近或等于 略低于放大器的输出阻抗的共轭复阻抗的值。 因此，在保持高频放大器的增益和噪声特性的同时，可以在高频放大器中获得具有高输出功率和低失真的输出信号。

公开(公告)号：US6133791A

公开(公告)日：2000-10-17

申请号：US177651

申请日：1998-10-23

申请人： Kenichi Horiguchi ,  Masatoshi Nakayama ,  Yukio Ikeda ,  Tadashi Takagi ,  Haruyasu Senda

发明人： Kenichi Horiguchi ,  Masatoshi Nakayama ,  Yukio Ikeda ,  Tadashi Takagi ,  Haruyasu Senda

IPC分类号： H03F1/32 ,  H03F1/00

CPC分类号： H03F1/3229

摘要： A feedforward amplifier which includes a distortion detector, a distortion eliminator, an error power extractor, a first level detector and a first controller. The error power extractor extracts output error power due to variations in the distortion eliminator by combining the output signal from the distortion eliminator with the signal from a first linear signal path in the distortion detector in opposite phases. The first level detector detects the output error power extracted by the error power extractor, and the first controller controls a first variable attenuator and a first phase shifter which are interposed in the distortion eliminator such that the output error power is maintained at zero. This can solve a problem of a conventional feedforward amplifier in that the power level of the pilot signal must be increased to heighten the detection sensitivity of the pilot signal because the detection level of the pilot signal becomes minimum at an optimum operation point, and that the increasing power of the pilot signal degrades the communication quality of a system employing the conventional feedforward amplifier.

摘要翻译： 一种前馈放大器，包括失真检测器，失真消除器，误差功率提取器，第一电平检测器和第一控制器。 误差功率提取器通过将来自失真消除器的输出信号与来自失真检测器中的第一线性信号路径的信号相反地组合，由于失真消除器的变化而提取输出误差功率。 第一电平检测器检测由误差电力提取器提取的输出误差功率，并且第一控制器控制插入失真消除器中的第一可变衰减器和第一移相器，使得输出误差功率保持为零。 这可以解决常规前馈放大器的问题，因为导频信号的检测电平在最佳操作点变为最小时必须提高导频信号的功率电平，以提高导频信号的检测灵敏度， 导频信号的增加功率降低了采用常规前馈放大器的系统的通信质量。

公开(公告)号：US5101172A

公开(公告)日：1992-03-31

申请号：US630474

申请日：1990-12-19

申请人： Yukio Ikeda ,  Gen Toyoshima ,  Noriharu Suematsu ,  Yoji Isota ,  Tadashi Takagi ,  Shuji Urasaki

发明人： Yukio Ikeda ,  Gen Toyoshima ,  Noriharu Suematsu ,  Yoji Isota ,  Tadashi Takagi ,  Shuji Urasaki

IPC分类号： H03F1/02 ,  H03F1/32 ,  H03F3/189

CPC分类号： H03F1/3247 ,  H03F1/0238 ,  H03F1/3282 ,  H03F2200/102 ,  H03F2200/438

摘要： A linear amplifier includes a variable attenuator and a phase shifter for modifying the amplitude and phase of an input signal to compensate for amplitude and phase distortion caused by non-linear characteristics of a high-powered amplifier utilized in a microwave band communications system. An amplitude comparator and a phase comparator compare the amplitudes and phases of input and output signals of the linear amplifier circuit to develop control signals for controlling the operation of the variable attenuator and phase shifter. The elimination of digital signal processing circuitry allows increased speed of operation that is essential for use in the microwave bands.

摘要翻译： 线性放大器包括可变衰减器和移相器，用于修改输入信号的幅度和相位，以补偿由微波频带通信系统中使用的高功率放大器的非线性特性引起的幅度和相位失真。 振幅比较器和相位比较器比较线性放大器电路的输入和输出信号的幅度和相位，以产生用于控制可变衰减器和移相器的操作的控制信号。 数字信号处理电路的消除允许增加在微波带中使用所必需的操作速度。

公开(公告)号：US5093637A

公开(公告)日：1992-03-03

申请号：US631506

申请日：1990-12-21

申请人： Yoji Isota ,  Gen Toyoshima ,  Noriharu Suematsu ,  Yukio Ikeda ,  Tadashi Takagi ,  Shuji Urasaki

发明人： Yoji Isota ,  Gen Toyoshima ,  Noriharu Suematsu ,  Yukio Ikeda ,  Tadashi Takagi ,  Shuji Urasaki

IPC分类号： H04L27/36 ,  H03C3/02 ,  H03C3/08 ,  H03F1/32 ,  H04L27/01 ,  H04L27/20

CPC分类号： H03F1/3247 ,  H03C3/08 ,  H03F1/3288 ,  H04L27/2071 ,  H03C3/02 ,  H03F2200/102 ,  H03F2201/3227 ,  H03F2201/3233

摘要： In a modulation system using an amplitude and a phase of a carrier wave as information such as a QPSK system, a modulation device modifies an input signal series to compensate the nonlinear characteristics of an amplifier located at a later stage, and provides a carrier wave modulated by the modified signal series to the amplifier. A first arithmetic circuit obtains an amplitude and a phase of an input signal by calculation. A ROM is set with correction data corresponding to the calculated amplitude so as to compensate the nonlinearity of the amplifier. A modification value generating circuit and a RAM output an amount of compensation so as to further modify the correction data according to part of an output signal from the amplifier to compensate amplifier characteristic changes due to temperature variations and the like. A second arithmetic circuit provides a signal series produced from the modified amplitude and phase to a quadrature modulator.

摘要翻译： 在使用载波的振幅和相位作为诸如QPSK系统的信息的调制系统中，调制装置修改输入信号序列以补偿位于后期的放大器的非线性特性，并提供载波调制 通过改进的信号系列到放大器。 第一算术电路通过计算获得输入信号的振幅和相位。 ROM设置有与所计算的幅度对应的校正数据，以补偿放大器的非线性。 修改值产生电路和RAM输出补偿量，以便根据来自放大器的输出信号的一部分进一步修改校正数据，以补偿由于温度变化等引起的放大器特性变化。 第二运算电路提供从修正的幅度和相位产生的信号到正交调制器。

公开(公告)号：US4853649A

公开(公告)日：1989-08-01

申请号：US151625

申请日：1988-02-02

申请人： Kiyoharu Seino ,  Tadashi Takagi ,  Fumio Takeda ,  Yukio Ikeda

发明人： Kiyoharu Seino ,  Tadashi Takagi ,  Fumio Takeda ,  Yukio Ikeda

IPC分类号： H03F1/30 ,  H01L27/06 ,  H01P1/00 ,  H03F3/60

CPC分类号： H01L27/0605 ,  H03F3/607

摘要： A distributed FET amplifier comprising an array of FET elements each having a gate terminal, a drain terminal and a source terminal. The gate terminals of the adjacent FET elements are connected by a first inductor, and the drain terminals of the adjacent FET elements are connected by a second inductor. Between the source terminals of each of the FET elements and the ground is connected a parallel circuit comprising a capacitor having a capacitance greater than the gate-source capacitance of the FET element and an impedance element connected in parallel to the capacitor for grounding the direct current. A bias voltage supply circuit for supplying a bias voltage to such as distributed amplifier is also disclosed.

摘要翻译： 一种分布式FET放大器，包括各自具有栅极端子，漏极端子和源极端子的FET元件阵列。 相邻FET元件的栅极端子通过第一电感器连接，并且相邻FET元件的漏极端子通过第二电感器连接。 在每个FET元件的源极端子和地之间连接有并联电路，该并联电路包括具有大于FET元件的栅极 - 源极电容的电容的电容器和与电容器并联连接的用于接地直流电的阻抗元件 。 还公开了一种用于向分布式放大器提供偏置电压的偏置电压供应电路。

公开(公告)号：US5093629A

公开(公告)日：1992-03-03

申请号：US631845

申请日：1990-12-21

申请人： Gen Toyoshima ,  Yukio Ikeda ,  Noriharu Suematsu ,  Yoji Isota ,  Tadashi Takagi ,  Shuji Urasaki

发明人： Gen Toyoshima ,  Yukio Ikeda ,  Noriharu Suematsu ,  Yoji Isota ,  Tadashi Takagi ,  Shuji Urasaki

IPC分类号： H03F1/32

CPC分类号： H03F1/3223

摘要： An amplifier circuit suitable for use in various types of communication devices, radar systems and the like, wherein a fundamental-wave signal extracted from an input side is converted into a second order signal and the second order signal is shifted so as to be opposite in phase and equal in amplitude to a second order signal produced by an amplifier such as an FET or multistage operational amplifier. The phase shifted signal is applied to the amplifier output, whereby the second order signal produced by the amplifier can assuredly be equivalently short-circuited and the operation efficiency of the amplifier can be improved.

摘要翻译： 一种适用于各种通信装置，雷达系统等的放大电路，其中从输入侧提取的基波信号被转换为二阶信号，并且第二级信号被移位以相对于 相位等于由诸如FET或多级运算放大器的放大器产生的二阶信号。 相位移信号被施加到放大器输出，由放大器产生的二阶信号可以确实等效地短路，并且可以提高放大器的工作效率。