公开(公告)号：US20120234356A1

公开(公告)日：2012-09-20

申请号：US13417388

申请日：2012-03-12

申请人： Kenji Nishi ,  Kazuhiro Takeshita ,  Nobuhiro Ogata ,  Satoru Tanaka ,  Shogo Mizota

发明人： Kenji Nishi ,  Kazuhiro Takeshita ,  Nobuhiro Ogata ,  Satoru Tanaka ,  Shogo Mizota

IPC分类号： B08B3/10 ,  B08B3/02

CPC分类号： H01L21/02052 ,  H01L21/67051 ,  H01L21/6708

摘要： There is provided a liquid processing apparatus including a rotation unit configured to hold the target substrate and rotate the target substrate around a vertical axis; a processing solution supply nozzle configured to supply the processing solution to the surface of the target substrate being rotated; a first gas supply unit configured to form a downward flow of a first gas that flows over the entire surface of the target substrate and is introduced into a cup in order to form a processing atmosphere suitable for a liquid process to be performed; and a second gas supply unit configured to form a downward flow of a second gas different from the first gas in a region outside the downward flow of the first gas. The first gas supply unit and the second gas supply unit are provided at a ceiling portion of the housing serving as the processing space.

摘要翻译： 提供了一种液体处理装置，包括：旋转单元，被配置为保持目标基板并使目标基板绕垂直轴旋转; 处理溶液供给喷嘴，被配置为将所述处理溶液供给到正在旋转的所述目标基板的表面; 第一气体供给单元，被配置为形成在目标基板的整个表面上流动的第一气体的向下流动并被引入杯中以形成适合于要进行的液体处理的处理气氛; 以及第二气体供给单元，被配置为在所述第一气体的向下流动的外部区域中形成与所述第一气体不同的第二气体的向下流动。 第一气体供给单元和第二气体供给单元设置在用作处理空间的壳体的顶部。

公开(公告)号：US07678199B2

公开(公告)日：2010-03-16

申请号：US11470353

申请日：2006-09-06

申请人： Shogo Mizota ,  Minami Teruomi ,  Kenji Yokomizo ,  Taira Masaki

发明人： Shogo Mizota ,  Minami Teruomi ,  Kenji Yokomizo ,  Taira Masaki

IPC分类号： B08B3/04

CPC分类号： H01L21/02052 ,  H01L21/02057 ,  Y10S134/902

摘要： A method is provided for reducing the amount of film fragments discharged into a processing liquid circulation system during removal of films from wafers, thereby reducing the frequency of filter cleaning or filter replacement. The method includes exposing a wafer containing a film formed thereon in a process chamber of a substrate processing system to a processing liquid, where the wafer is not rotated or is rotated at a first speed and the processing liquid is discharged from the process chamber to a processing liquid circulation system. Subsequently, exposure of the wafer to the processing liquid is discontinued and the wafer is rotated at a second speed greater than the first speed to centrifugally remove fragments of the film from the wafer. Next, the wafer is exposed to the same or a different processing liquid and the processing liquid is discharged from the process chamber to a processing liquid drain.

摘要翻译： 提供了一种减少在从晶片去除薄膜期间排出到处理液循环系统中的薄膜碎片的量的方法，从而降低了过滤器清洁或过滤器更换的频率。 该方法包括将其上形成的膜的晶片暴露于基板处理系统的处理室中的处理液体中，其中晶片不以第一速度旋转或旋转，并且处理液体从处理室排出到 处理液体循环系统。 随后，停止将晶片暴露于处理液体，并以大于第一速度的第二速度转动晶片，从晶片离心分离膜片。 接下来，将晶片暴露于相同或不同的处理液体，并且处理液体从处理室排出到处理液体排出口。

公开(公告)号：US20100319734A1

公开(公告)日：2010-12-23

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi MINAMI ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi MINAMI ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US09305767B2

公开(公告)日：2016-04-05

申请号：US13417388

申请日：2012-03-12

申请人： Kenji Nishi ,  Kazuhiro Takeshita ,  Nobuhiro Ogata ,  Satoru Tanaka ,  Shogo Mizota

发明人： Kenji Nishi ,  Kazuhiro Takeshita ,  Nobuhiro Ogata ,  Satoru Tanaka ,  Shogo Mizota

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02052 ,  H01L21/67051 ,  H01L21/6708

摘要： There is provided a liquid processing apparatus including a rotation unit configured to hold the target substrate and rotate the target substrate around a vertical axis; a processing solution supply nozzle configured to supply the processing solution to the surface of the target substrate being rotated; a first gas supply unit configured to form a downward flow of a first gas that flows over the entire surface of the target substrate and is introduced into a cup in order to form a processing atmosphere suitable for a liquid process to be performed; and a second gas supply unit configured to form a downward flow of a second gas different from the first gas in a region outside the downward flow of the first gas. The first gas supply unit and the second gas supply unit are provided at a ceiling portion of the housing serving as the processing space.

摘要翻译： 提供了一种液体处理装置，包括：旋转单元，被配置为保持目标基板并使目标基板绕垂直轴旋转; 处理溶液供给喷嘴，被配置为将所述处理溶液供给到正在旋转的所述目标基板的表面; 第一气体供给单元，被配置为形成在目标基板的整个表面上流动的第一气体的向下流动并被引入杯中以形成适合于要进行的液体处理的处理气氛; 以及第二气体供给单元，被配置为在所述第一气体的向下流动的外部区域中形成与所述第一气体不同的第二气体的向下流动。 第一气体供给单元和第二气体供给单元设置在用作处理空间的壳体的顶部。

公开(公告)号：US08303723B2

公开(公告)日：2012-11-06

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US20080053489A1

公开(公告)日：2008-03-06

申请号：US11470353

申请日：2006-09-06

申请人： Shogo Mizota ,  Minami Teruomi ,  Kenji Yokomizo ,  Taira Masaki

发明人： Shogo Mizota ,  Minami Teruomi ,  Kenji Yokomizo ,  Taira Masaki

IPC分类号： B08B7/00

CPC分类号： H01L21/02052 ,  H01L21/02057 ,  Y10S134/902

摘要： A method is provided for reducing the amount of film fragments discharged into a processing liquid circulation system during removal of films from wafers, thereby reducing the frequency of filter cleaning or filter placement. The method includes exposing a wafer containing a film formed thereon in a process chamber of a substrate processing system to a processing liquid, where the wafer is not rotated or is rotated at a first speed and the processing liquid is discharged from the process chamber to a processing liquid circulation system. Subsequently, exposure of the wafer to the processing liquid is discontinued and the wafer is rotated at a second speed greater than the first speed to centrifugally remove fragments of the film from the wafer. Next, the wafer is exposed to the same or a different processing liquid and the processing liquid is discharged from the process chamber to a processing liquid drain.

摘要翻译： 提供了一种减少在从晶片去除薄膜期间排出到处理液循环系统中的薄膜碎片的量的方法，从而降低了过滤器清洁或过滤器放置的频率。 该方法包括将其上形成的膜的晶片暴露于基板处理系统的处理室中的处理液体中，其中晶片不以第一速度旋转或旋转，并且处理液体从处理室排出到 处理液体循环系统。 随后，停止将晶片暴露于处理液体，并以大于第一速度的第二速度转动晶片，从晶片离心分离膜片。 接下来，将晶片暴露于相同或不同的处理液体，并且处理液体从处理室排出到处理液体排出口。