公开(公告)号：US08303723B2

公开(公告)日：2012-11-06

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US08475668B2

公开(公告)日：2013-07-02

申请号：US12902721

申请日：2010-10-12

申请人： Hiroshi Tanaka ,  Teruomi Minami ,  Yosuke Kawabuchi ,  Norihiro Ito ,  Fumihiro Kamimura ,  Takashi Yabuta ,  Kazuki Kosai ,  Takeshi Uno ,  Kenji Sekiguchi ,  Yasushi Fujii

发明人： Hiroshi Tanaka ,  Teruomi Minami ,  Yosuke Kawabuchi ,  Norihiro Ito ,  Fumihiro Kamimura ,  Takashi Yabuta ,  Kazuki Kosai ,  Takeshi Uno ,  Kenji Sekiguchi ,  Yasushi Fujii

IPC分类号： H01B13/00

CPC分类号： H01L21/02057 ,  H01L21/67051

摘要： Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

摘要翻译： 提供一种基板液体处理装置，基板液体处理方法以及其中存储有基板液体处理程序的计算机可读存储介质，其可以防止由基板中的电荷放电引起的静电破坏的发生。 基板液体处理装置用化学液体处理基板的电路形成表面。 此外，在用化学液体处理基板之前，基板液体处理装置通过防静电液体对与基板的电路形成面相反的表面进行防静电处理，从而将电荷 基质。

公开(公告)号：US20100108096A1

公开(公告)日：2010-05-06

申请号：US12320536

申请日：2009-01-28

申请人： Teruomi Minami ,  Takashi Yabuta ,  Kazuki Kosai

发明人： Teruomi Minami ,  Takashi Yabuta ,  Kazuki Kosai

IPC分类号： B08B3/10 ,  B08B3/08 ,  B08B13/00

CPC分类号： H01L21/6708 ,  H01L21/02057

摘要： A liquid processing method performs a liquid process after an etching target film formed on a surface of a substrate is etched through a hard mask layer used as an etching mask and having a predetermined pattern formed therein. The liquid process is used for removing the hard mask layer and a polymer deposited due to etching. The method includes a second step of switching from a discard side to a collection side for collecting a chemical liquid used in the liquid process and recycling the chemical liquid in the liquid process, when the hard mask layer is removed by a first step to a residual quantity at which the chemical liquid used in the liquid process becomes collectable for reuse.

摘要翻译： 在通过用作蚀刻掩模并形成有预定图案的硬掩模层蚀刻形成在基板表面上的蚀刻目标膜之后，液体处理方法进行液体处理。 液体方法用于去除硬掩模层和由于蚀刻沉积的聚合物。 该方法包括第二步骤，当将硬掩模层通过第一步骤移除到残余物时，从丢弃侧切换到收集侧，用于收集液体处理中使用的化学液体并循环液体过程中的化学液体 在液体处理中使用的化学液体可以收集用于再利用的量。

公开(公告)号：US5671544A

公开(公告)日：1997-09-30

申请号：US697132

申请日：1996-08-20

申请人： Kenji Yokomizo ,  Hiroshi Tanaka ,  Shori Mokuo ,  Teruomi Minami

发明人： Kenji Yokomizo ,  Hiroshi Tanaka ,  Shori Mokuo ,  Teruomi Minami

IPC分类号： H01L21/304 ,  F26B21/14 ,  H01L21/00 ,  F26B21/06

CPC分类号： H01L21/67034 ,  F26B21/145

摘要： A substrate drying apparatus includes a process bath having an object containing region for containing an object to be treated, a treatment liquid containing region for containing a volatile treatment liquid, and heating member for evaporating the treatment liquid, a receiving container, provided below the object containing region, for receiving water removed from the object with use of the evaporated treatment liquid, an exhaust pipe, attached to the container, for exhausting the water from the container to the outside of the process bath, and a cooling device, provided above the object containing region of the process bath, for condensing the evaporated treatment liquid, wherein the exhaust pipe has a valve and a branch pipe branched from the exhaust pipe such that the branch pipe is closer to the container than the valve is.

摘要翻译： 基材干燥装置包括具有含有待处理物体的被检体容纳区域的处理槽，含有挥发性处理液的处理液含有区域和蒸发处理液的加热部件，设置在物体的下方的接收容器 用于接收使用所述蒸发处理液从所述物体除去的水;附接到所述容器的用于将水从所述容器排出到所述处理槽的外部的排气管，以及设置在所述容器的上方的冷却装置 用于使蒸发的处理液冷凝的排出管，其特征在于，所述排气管具有从所述排气管分支的阀和分支管，使得所述分支管比所述阀更靠近所述容器。

公开(公告)号：US5575079A

公开(公告)日：1996-11-19

申请号：US330793

申请日：1994-10-28

申请人： Kenji Yokomizo ,  Hiroshi Tanaka ,  Shori Mokuo ,  Teruomi Minami

发明人： Kenji Yokomizo ,  Hiroshi Tanaka ,  Shori Mokuo ,  Teruomi Minami

IPC分类号： H01L21/304 ,  F26B21/14 ,  H01L21/00 ,  F26B21/06

CPC分类号： H01L21/67034 ,  F26B21/145

摘要： A substrate drying apparatus includes a process bath having an object containing region for containing an object to be treated, a treatment liquid containing region for containing a volatile treatment liquid, and heating member for evaporating the treatment liquid, a receiving container, provided below the object containing region, for receiving water removed from the object with use of the evaporated treatment liquid, an exhaust pipe, attached to the container, for exhausting the water from the container to the outside of the process bath, and a cooling device, provided above the object containing region of the process bath, for condensing the evaporated treatment liquid, wherein the exhaust pipe has a valve and a branch pipe branched from the exhaust pipe such that the branch pipe is closer to the container than the valve is.

摘要翻译： 基材干燥装置包括具有含有待处理物体的被检体容纳区域的处理槽，含有挥发性处理液的处理液含有区域和蒸发处理液的加热部件，设置在物体的下方的接收容器 用于接收使用所述蒸发处理液从所述物体除去的水;附接到所述容器的用于将水从所述容器排出到所述处理槽的外部的排气管，以及设置在所述容器的上方的冷却装置 用于使蒸发的处理液冷凝的排出管，其特征在于，所述排气管具有从所述排气管分支的阀和分支管，使得所述分支管比所述阀更靠近所述容器。

公开(公告)号：US08308870B2

公开(公告)日：2012-11-13

申请号：US12610599

申请日：2009-11-02

申请人： Teruomi Minami ,  Takashi Yabuta ,  Satoru Tanaka ,  Hirotaka Maruyama ,  Kouichi Eguchi

发明人： Teruomi Minami ,  Takashi Yabuta ,  Satoru Tanaka ,  Hirotaka Maruyama ,  Kouichi Eguchi

IPC分类号： B08B3/08

CPC分类号： H01L21/67051

摘要： Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.

摘要翻译： 公开了一种清洁装置和清洁方法，其可以在基板经受清洁处理之后收集化学液体而不降低生产量，并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理，漂洗处理和IPA干燥处理，并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯，在清洗液未供给到晶片的状态下。 此外，该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后，控制单元在进行清洁处理，然后进行晶片W的漂洗处理之后，控制向排水杯供给的清洗液。

公开(公告)号：US08545640B2

公开(公告)日：2013-10-01

申请号：US13161721

申请日：2011-06-16

申请人： Teruomi Minami ,  Naoyuki Okamura ,  Yosuke Kawabuchi

发明人： Teruomi Minami ,  Naoyuki Okamura ,  Yosuke Kawabuchi

IPC分类号： B08B3/02

CPC分类号： H01L21/67028 ,  H01L21/67051

摘要： In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

摘要翻译： 在根据本发明的基板处理方法中，清洗液喷嘴将冲洗液体提供到基板的中心部分，然后从与基板的中心部分相对应的位置移动到对应于周边边缘部分的位置 同时在与周缘部对应的位置停止前供给冲洗液。 接着，在供给干燥液的同时，将干燥液喷嘴从对应于周缘部的位置移动到与中央部对应的位置。 然后，在供给干燥液体的同时，将干燥液喷嘴保持静止在与中央部分对应的位置一段预定的时间。 此后，在供给惰性气体的同时，气体喷嘴从对应于中心部分的位置移动到对应于周边边缘部分的位置。

公开(公告)号：US20120164840A1

公开(公告)日：2012-06-28

申请号：US13332652

申请日：2011-12-21

申请人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

发明人： Satoru Tanaka ,  Takehiko Orii ,  Hirotaka Maruyama ,  Teruomi Minami ,  Mitsunori Nakamori

IPC分类号： H01L21/306 ,  B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67028 ,  H01L21/67051

摘要： A substrate processing method includes a liquid processing process that supplies a processing liquid onto a substrate to process the substrate; a heating process that heats the substrate on which a liquid film of the processing liquid is formed; a supplying process that supplies a volatile processing liquid to the substrate on which the liquid film of the processing liquid is formed; a stopping process that stops the supply of the volatile processing liquid to the substrate; and a drying process that dries the substrate by removing the volatile processing liquid, in which the heating process starts before the supplying process that supplies the volatile processing liquid and the substrate is heated so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

摘要翻译： 基板处理方法包括将处理液供给到基板上以处理基板的液体处理工序; 对形成有处理液的液膜的基板进行加热的加热工序; 向形成处理液的液膜的基板供给挥发性处理液的供给工序; 停止向基板供应挥发性处理液的停止处理; 以及通过除去挥发性处理液体而干燥基板的干燥工序，其中加热过程在供应挥发性处理液和基板的供应过程开始之前开始，使得基板的表面温度高于露点 在基板的表面从挥发性处理液体露出之前。

公开(公告)号：US08371318B2

公开(公告)日：2013-02-12

申请号：US13591877

申请日：2012-08-22

申请人： Teruomi Minami ,  Norihiro Ito ,  Yuji Kamikawa

发明人： Teruomi Minami ,  Norihiro Ito ,  Yuji Kamikawa

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

摘要： A liquid processing apparatus 1 comprises a casing 5, a substrate holding mechanism 20 that holds a wafer (substrate to be processed) W, a process-liquid supplying mechanism 30 that supplies a process liquid, a draining cup 12 that receives a process liquid, and a draining pipe 13 that discharges a process liquid outside. The process-liquid supplying mechanism 30 includes a first chemical-liquid supply mechanism that supplies a hydrofluoric process liquid, and a drying-liquid supplying mechanism that supplies an organic solvent for drying a wafer W. A control part 50 causes the first chemical-liquid supplying mechanism to supply a hydrofluoric process liquid, and then causes the drying-liquid supplying mechanism to supply an organic solvent. In addition, before the control part 50 causes the drying-liquid supplying mechanism to supply an organic solvent, the control part causes a cleaning mechanism 10 to remove an alkaline component in a casing 5.

公开(公告)号：US07669472B2

公开(公告)日：2010-03-02

申请号：US11604890

申请日：2006-11-28

申请人： Koji Tanaka ,  Teruomi Minami

发明人： Koji Tanaka ,  Teruomi Minami

IPC分类号： G01F23/00

CPC分类号： G01F23/02 ,  G01F23/2927

摘要： A liquid level detector 10 includes a liquid guiding pipe 14 that guides a liquid in a tank to an inside thereof in such a manner that a liquid level of the guided liquid conforms to a liquid level of the liquid in the tank, and a branching liquid guiding pipe 15 for detecting a liquid level, which branches off from the liquid guiding pipe to guide the liquid into an inside thereof in such a manner that a liquid level of the guided liquid conforms to a liquid level of the liquid in the tank. The branching liquid guiding pipe 15 is provided with position sensors 16 (16a, 16b, 16c, 16d) for detecting the liquid level of the liquid in the branching liquid guiding pipe 15. On a part where the liquid guiding pipe 14 and the branching liquid guiding pipe 15 are connected to each other, there is disposed a bubble passage prevention member 17 of a porous plate shape, which prevents bubble generated in the liquid from entering the branching liquid guiding pipe 15.

摘要翻译： 液面检测器10包括：液体引导管14，其将罐中的液体引导到其内部，使得被引导液体的液面与罐中液体的液面一致;以及分支液体 引导管15，用于检测从液体引导管分支的液面，以将液体引导到其内部，使得被引导液体的液面与罐中液体的液面一致。 分支液引导管15设置有用于检测分支液引导管15中的液体液位的位置传感器16（16a，16b，16c，16d）。在液体引导管14和分支液体 引导管15彼此连接，设置有防止液体中产生的气泡进入分支液引导管15的多孔板形状的气泡通道防止部件17。