公开(公告)号：US08303723B2

公开(公告)日：2012-11-06

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US20100319734A1

公开(公告)日：2010-12-23

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi MINAMI ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi MINAMI ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US08475668B2

公开(公告)日：2013-07-02

申请号：US12902721

申请日：2010-10-12

申请人： Hiroshi Tanaka ,  Teruomi Minami ,  Yosuke Kawabuchi ,  Norihiro Ito ,  Fumihiro Kamimura ,  Takashi Yabuta ,  Kazuki Kosai ,  Takeshi Uno ,  Kenji Sekiguchi ,  Yasushi Fujii

发明人： Hiroshi Tanaka ,  Teruomi Minami ,  Yosuke Kawabuchi ,  Norihiro Ito ,  Fumihiro Kamimura ,  Takashi Yabuta ,  Kazuki Kosai ,  Takeshi Uno ,  Kenji Sekiguchi ,  Yasushi Fujii

IPC分类号： H01B13/00

CPC分类号： H01L21/02057 ,  H01L21/67051

摘要： Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

摘要翻译： 提供一种基板液体处理装置，基板液体处理方法以及其中存储有基板液体处理程序的计算机可读存储介质，其可以防止由基板中的电荷放电引起的静电破坏的发生。 基板液体处理装置用化学液体处理基板的电路形成表面。 此外，在用化学液体处理基板之前，基板液体处理装置通过防静电液体对与基板的电路形成面相反的表面进行防静电处理，从而将电荷 基质。

公开(公告)号：US20100108096A1

公开(公告)日：2010-05-06

申请号：US12320536

申请日：2009-01-28

申请人： Teruomi Minami ,  Takashi Yabuta ,  Kazuki Kosai

发明人： Teruomi Minami ,  Takashi Yabuta ,  Kazuki Kosai

IPC分类号： B08B3/10 ,  B08B3/08 ,  B08B13/00

CPC分类号： H01L21/6708 ,  H01L21/02057

摘要： A liquid processing method performs a liquid process after an etching target film formed on a surface of a substrate is etched through a hard mask layer used as an etching mask and having a predetermined pattern formed therein. The liquid process is used for removing the hard mask layer and a polymer deposited due to etching. The method includes a second step of switching from a discard side to a collection side for collecting a chemical liquid used in the liquid process and recycling the chemical liquid in the liquid process, when the hard mask layer is removed by a first step to a residual quantity at which the chemical liquid used in the liquid process becomes collectable for reuse.

摘要翻译： 在通过用作蚀刻掩模并形成有预定图案的硬掩模层蚀刻形成在基板表面上的蚀刻目标膜之后，液体处理方法进行液体处理。 液体方法用于去除硬掩模层和由于蚀刻沉积的聚合物。 该方法包括第二步骤，当将硬掩模层通过第一步骤移除到残余物时，从丢弃侧切换到收集侧，用于收集液体处理中使用的化学液体并循环液体过程中的化学液体 在液体处理中使用的化学液体可以收集用于再利用的量。

公开(公告)号：US20090286399A1

公开(公告)日：2009-11-19

申请号：US12086298

申请日：2007-09-04

申请人： Yasushi Fujii ,  Kazuki Kosai

发明人： Yasushi Fujii ,  Kazuki Kosai

IPC分类号： H01L21/4757 ,  H01L21/467 ,  G06F17/00

CPC分类号： H01L21/31144 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67225 ,  H01L21/76808 ,  H01L21/76814

摘要： A substrate processing method includes performing an etching process on a low dielectric constant film disposed on a substrate, thereby forming a predetermined pattern thereon; denaturing a remaining substance to be soluble in a predetermined liquid after the etching process; dissolving and removing the substance thus denatured, by supplying the predetermined liquid thereon; then, performing a silylation process on a surface of the low dielectric constant film, by supplying a silylation agent thereon, after said dissolving and removing the substance denatured; and baking the substrate after the silylation process.

摘要翻译： 衬底处理方法包括对设置在衬底上的低介电常数膜进行蚀刻处理，从而在其上形成预定图案; 在蚀刻处理之后使残留物质变得可溶于预定液体; 通过在其上供应预定液体来溶解和除去因此变性的物质; 然后，在所述低介电常数膜的表面上，通过在所述溶解和去除所述物质变性之后向其上供给甲硅烷基化剂进行甲硅烷基化处理; 并在甲硅烷基化处理后烘烤底物。