公开(公告)号：US20110097843A1

公开(公告)日：2011-04-28

申请号：US12954316

申请日：2010-11-24

申请人： Yoshito Jin ,  Hideaki Sakai ,  Masaru Shimada

发明人： Yoshito Jin ,  Hideaki Sakai ,  Masaru Shimada

IPC分类号： H01L21/20

CPC分类号： C23C14/08 ,  C23C14/357 ,  G11C13/0007 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/147 ,  H01L45/1625

摘要： A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104) to switch a stable high resistance mode and low resistance mode, a memory operation is obtained. A read can easily be done by reading a current value when a predetermined voltage is applied to the upper electrode (105).

摘要翻译： 铁电层（104）夹在下电极层（103）和上电极（105）之间。 当在下电极层（103）和上电极（105）之间施加预定电压（DC或脉冲）以改变强电介质层（104）的电阻值以切换稳定的高电阻模式和低电阻模式时， 获得存储器操作。 当向上电极（105）施加预定电压时，通过读取当前值可容易地进行读取。

公开(公告)号：US20100190033A1

公开(公告)日：2010-07-29

申请号：US12712024

申请日：2010-02-24

申请人： Yoshito JIN ,  Hideaki Sakai ,  Masaru Shimada

发明人： Yoshito JIN ,  Hideaki Sakai ,  Masaru Shimada

IPC分类号： B32B9/00

CPC分类号： C23C14/08 ,  C23C14/357 ,  G11C13/0007 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/147 ,  H01L45/1625

摘要： A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104) to switch a stable high resistance mode and low resistance mode, a memory operation is obtained. A read can easily be done by reading a current value when a predetermined voltage is applied to the upper electrode (105).

摘要翻译： 铁电层（104）夹在下电极层（103）和上电极（105）之间。 当在下电极层（103）和上电极（105）之间施加预定电压（DC或脉冲）以改变强电介质层（104）的电阻值以切换稳定的高电阻模式和低电阻模式时， 获得存储器操作。 当向上电极（105）施加预定电压时，通过读取当前值可容易地进行读取。

公开(公告)号：US20040168631A1

公开(公告)日：2004-09-02

申请号：US10736783

申请日：2003-12-17

发明人： Fumikane Honjou ,  Kazunori Hasegawa ,  Hiroki Okunishi

IPC分类号： C23C016/00

CPC分类号： H01J37/32477 ,  C23C14/357 ,  C23C14/564 ,  C23C16/4401 ,  H01J37/32192 ,  H01J37/32678

摘要： Disclosed is a plasma processing apparatus provided with a plasma chamber in which a plasma is generated by electron cyclotron resonance, and a sample chamber for housing a sample to be processed with the plasma. The plasma chamber is provided with a protection tube for protecting the inner walls of the plasma chamber from deposition of products resulting from the plasma processing. The protection tube is composed of a plurality of sub-tubes formed in relation to the temperature distribution at the time of the plasma processing.

摘要翻译： 公开了一种等离子体处理装置，其具有通过电子回旋共振产生等离子体的等离子体室，以及用于容纳待处理样品的等离子体的样品室。 等离子体室设置有用于保护等离子体室的内壁的保护管不会由等离子体处理产生的产物的沉积。 保护管由在等离子体处理时相对于温度分布形成的多个子管构成。

公开(公告)号：US20030180572A1

公开(公告)日：2003-09-25

申请号：US10379731

申请日：2003-03-06

申请人： Daido Metal Company Ltd.

发明人： Akinori Norito ,  Toshiaki Kawachi ,  Hideo Ishikawa ,  Takayuki Shibayama ,  Kunihiko Iwasaki ,  Cristian Petrica Lungu

IPC分类号： B32B015/04

CPC分类号： C23C28/046 ,  C23C14/06 ,  C23C14/357 ,  C23C28/048 ,  C23C30/00 ,  F16C33/10 ,  F16C33/12 ,  Y10S384/907 ,  Y10S384/912 ,  Y10S384/913 ,  Y10T428/12535 ,  Y10T428/12576 ,  Y10T428/12625 ,  Y10T428/12896

摘要： In a slide member comprising a base member and a slide layer including a first surface fixed to the base member and a second surface being opposite to the first surface in a thickness direction of the slide layer and capable of contacting another member in such a manner that the another member is movable on the second surface, the slide layer includes silver as a main component of the slide layer and a solid lubricant.

摘要翻译： 在包括基部构件和滑动层的滑动构件中，滑动层包括固定到基座构件的第一表面和在滑动层的厚度方向上与第一表面相对的第二表面，并且能够以这样的方式接触另一构件： 另一个构件可在第二表面上移动，滑动层包括作为滑动层的主要成分的银和固体润滑剂。

公开(公告)号：US5302266A

公开(公告)日：1994-04-12

申请号：US951924

申请日：1992-09-25

申请人： Henry J. Grabarz ,  Alfred Grill ,  William M. Holber ,  Joseph S. Logan ,  James T. C. Yeh

发明人： Henry J. Grabarz ,  Alfred Grill ,  William M. Holber ,  Joseph S. Logan ,  James T. C. Yeh

IPC分类号： C23C14/34 ,  C23C14/04 ,  C23C14/32 ,  C23C14/35 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768 ,  H05H1/18

CPC分类号： C23C14/046 ,  C23C14/32 ,  C23C14/357 ,  H01J37/32009 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/76877 ,  H01J2237/3327

摘要： An electron cyclotron resonance plasma heating apparatus system and process in which microwave energy is transmitted directly in an axial direction through an evacuated chamber to generate energetic electrons. These energetic electrons spiral around the magnetic field lines formed by the solenoid and spiral substantially parallel to the axis. A metal atom vapor source transmits the metal atom vapor into the chamber through a housing port in the chamber wall. The metal atom vapor source in the housing is out of the line of sight of the substrate. The metal atoms are ionized by the energized electrons, and these ionized metal atoms are confined to the plasma column substantially free of neutral atoms as such ionized metal approaches and contacts the substrate in said evacuated chamber. In this way, the ionized metal atoms substantially avoid contact with the wall of chamber. A sputter target of a second metal may be placed in the plane of the substrate and a bias voltage applied to the target. Atoms of the second metal are then sputtered off and ionized by the plasma and are deposited on the substrate with the first metal ions.

摘要翻译： 电子回旋共振等离子体加热装置系统和微波能量通过真空室沿轴向直接传递以产生高能电子的过程。 这些高能电子围绕由螺线管形成的磁场线与螺旋线基本平行。 金属原子蒸汽源通过室壁中的壳体端口将金属原子蒸气传输到室中。 壳体中的金属原子蒸汽源不在衬底的视线之内。 金属原子被激发电子电离，这些离子化的金属原子被限制在基本上不含中性原子的等离子体柱上，因为这样的电离金属靠近并接触所述真空室中的衬底。 以这种方式，电离金属原子基本上避免与室的壁接触。 可以将第二金属的溅射靶放置在基板的平面中，并将偏置电压施加到靶。 然后将第二金属的原子溅射并通过等离子体离子化，并用第一金属离子沉积在基底上。

公开(公告)号：US5232569A

公开(公告)日：1993-08-03

申请号：US848251

申请日：1992-03-09

申请人： Carl W. Nelson ,  Richard D. Weir

发明人： Carl W. Nelson ,  Richard D. Weir

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/357 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32623 ,  H01J37/32678 ,  H01J37/32688 ,  H01J37/34 ,  H01J37/3402

摘要： Disclosed is a sputtering apparatus and method for deposition of a film on a substrate with means for exciting a plasma by ultrahigh radio frequency or microwave at the electron cyclotron resonance to create a region of plasma which is devoid of magnetic field and at least one high-radio frequency planar disk diode positioned within the region devoid of magnetic field, a target attached to said rf planar diode, and a high-radio frequency substrate biasing electrode parallel to the planar diode.

摘要翻译： 公开了一种用于在基板上沉积膜的溅射装置和方法，该装置用于在电子回旋共振下通过超高频射频或微波激发等离子体，以产生无磁场的等离子体区域， 位于没有磁场的区域内的射频平面盘二极管，附着于所述平面二极管的目标以及与平面二极管平行的高射频基板偏置电极。

公开(公告)号：US5074985A

公开(公告)日：1991-12-24

申请号：US592283

申请日：1990-10-03

申请人： Hitoshi Tamura ,  Tamotsu Shimizu

发明人： Hitoshi Tamura ,  Tamotsu Shimizu

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C16/511 ,  H01J37/32 ,  H01L21/203 ,  H01L21/285

CPC分类号： H01J37/32238 ,  C23C14/357 ,  C23C16/511 ,  H01J37/32192

摘要： A film forming apparatus comprises of a microwave generating device and processing chamber. The processing chamber has a substrate therein, holds the pressure of atmosphere gas therein at a predetermined value, and generates plasma while introducing the microwave generated by the microwave generating device for forming a film on the substrate. The microwave is introduced in the processing chamber through a dielectric member disposed in the processing chamber. Further a shielding member is disposed in the processing chamber so as to be opposite to the dielectric member for preventing the attachment of film forming material to the dielectric member.

公开(公告)号：US4874497A

公开(公告)日：1989-10-17

申请号：US210511

申请日：1988-06-08

申请人： Morito Matsuoka ,  Ken'ichi Ono

发明人： Morito Matsuoka ,  Ken'ichi Ono

IPC分类号： H01L21/31 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01L21/203 ,  H01L21/285 ,  H05H1/46

CPC分类号： H01J37/32623 ,  C23C14/352 ,  C23C14/357 ,  H01J37/32357 ,  H01J37/3266 ,  H01J37/32678

摘要： Plasma is generated by electron cyclotron resonance utilizing microwave energy and is confined within a plasma generation chamber by a mirror magnetic field, whereby high density plasma is obtained. Targets are disposed within the plasma generation chamber in the direction perpendicular to the magnetic flux and sputtered by the ions in the high density plasma, whereby a large amount of ions are sputtered and neutral particles produced. The ions and neutral particles are extracted in the direction perpendicular to the magnetic flux and deposited over the surface of a substrate so that it is possible to form a thin film at a high deposition rate without the bombardment of high-energy particles upon the substrate. Furthermore, the ions and neutral particles can be extracted through a slit-like opening formed through the cylindrical wall of the plasma generation chamber, so that a thin film is continuously formed on the surface of a tape-like substrate.

摘要翻译： PCT No.PCT / JP87 / 00759 Sec。 371日期：1988年6月8日 102（e）日期1988年6月8日PCT提交1987年10月8日PCT公布。 出版物WO88 / 02791 日期：1988年04月21日。通过使用微波能量的电子回旋共振产生波片，并通过镜面磁场限制在等离子体发生室内，由此获得高密度等离子体。 目标在垂直于磁通的方向设置在等离子体发生室内，并由高密度等离子体中的离子溅射，由此大量的离子被溅射并产生中性粒子。 离子和中性粒子在与磁通垂直的方向上被提取并沉积在基片的表面上，使得可以以高沉积速率形成薄膜而不会在基底上轰击高能粒子。 此外，离子和中性粒子可以通过通过等离子体产生室的圆筒壁形成的狭缝状开口被提取，从而在带状基底的表面上连续地形成薄膜。

公开(公告)号：US09506142B2

公开(公告)日：2016-11-29

申请号：US13913643

申请日：2013-06-10

申请人： TOKAI RUBBER INDUSTRIES, LTD. ,  NAT'L UNIVERSITY CORPORATION NAGOYA UNIVERSITY

发明人： Kensuke Sasai ,  Hirotaka Toyoda

IPC分类号： C23C14/35 ,  H05H1/46 ,  H01J37/32 ,  H01J37/34 ,  C23C14/08

CPC分类号： C23C14/357 ,  C23C14/086 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32678 ,  H01J37/3405 ,  H05H1/46

摘要： A microwave plasma generation apparatus (4) includes: a rectangular waveguide (41) that transmits a microwave; a slot antenna (42) that has a slot (420) through which the microwave passes; and a dielectric portion (43) that is arranged so as to cover the slot (420) and of which a plasma generating region-side front face is parallel to an incident direction in which the microwave enters from the slot (420). The microwave plasma generation apparatus (4) is able to generate microwave plasma (P1) under a low pressure of lower than or equal to 1 Pa. A magnetron sputtering deposition system (1) includes the microwave plasma generation apparatus (4), and carries out film deposition using magnetron plasma (P2) while radiating microwave plasma (P1) between a base material (20) and a target (30). With the magnetron sputtering deposition system (1), it is possible to form a thin film having small asperities on its surface.

摘要翻译： 微波等离子体产生装置（4）包括：发送微波的矩形波导（41）; 缝隙天线（42），其具有微波通过的槽（420）; 以及布置成覆盖所述槽（420）并且等离子体产生区域侧前表面平行于微波从所述槽（420）进入的入射方向的电介质部分（43）。 微波等离子体生成装置（4）能够在低于或等于1Pa的低压下产生微波等离子体（P1）。磁控溅射沉积系统（1）包括微波等离子体产生装置（4），并携带 同时在基材（20）和靶（30）之间辐射微波等离子体（P1）时使用磁控管等离子体（P2）进行薄膜沉积。 利用磁控溅射沉积系统（1），可以在其表面上形成具有小凹凸的薄膜。

公开(公告)号：US09147557B2

公开(公告)日：2015-09-29

申请号：US13446873

申请日：2012-04-13

申请人： Yong-Sup Choi ,  Myung-Soo Huh

发明人： Yong-Sup Choi ,  Myung-Soo Huh

IPC分类号： C23C14/28 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

CPC分类号： H01J37/32229 ,  C23C14/352 ,  C23C14/357 ,  H01J37/32275 ,  H01J37/3405

摘要： A sputter device including a plurality of targets having magnetism; a reflector having magnetism and arranged between neighboring targets of the plurality of targets; a wave guide having magnetism and arranged adjacent the targets, the wave guide forming a guide space for guiding microwaves; and a limiter having magnetism and arranged adjacent the wave guide, the limiter forming an electron cyclotron resonance area together with the targets, the reflector, and the wave guide.

摘要翻译： 一种包括具有磁性的多个靶的溅射装置; 具有磁性并布置在所述多个靶的相邻靶之间的反射器; 具有磁性并布置成邻近靶的波导，波导形成用于引导微波的引导空间; 以及具有磁性并且布置成邻近波导的限幅器，限制器与靶，反射器和波导一起形成电子回旋共振区域。