公开(公告)号：US20120244649A1

公开(公告)日：2012-09-27

申请号：US13511802

申请日：2010-12-14

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/32125 ,  B24B37/0053 ,  B24B37/042 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  H01L21/02024

Abstract: A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).

Abstract translation: 一种抛光方法和抛光装置，特别适用于将包含诸如Ga等的元素的化合物半导体的基板的表面整理到期望的平坦度，使得含有元素的化合物半导体的基板的表面 的Ga可以在实际的处理时间内以高表面精度平坦化。 在存在水（232）如弱酸水，溶于其中的空气的水或电解离子水的存在下，由包含Ga，Al和In中的任一个的化合物半导体制成的基板（142）的表面和 在与基板（142）保持接触的表面的区域中具有导电构件（264）的抛光垫（242）的表面相对移动，同时保持彼此接触，从而抛光表面 衬底（142）。

公开(公告)号：US08912095B2

公开(公告)日：2014-12-16

申请号：US13511802

申请日：2010-12-14

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L21/302 ,  H01L21/461 ,  B24B49/12 ,  B24B37/30 ,  B24B37/04 ,  H01L21/02 ,  B24B37/005 ,  B24B37/10

CPC classification number: H01L21/32125 ,  B24B37/0053 ,  B24B37/042 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  H01L21/02024

Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.

Abstract translation: 抛光方法和抛光装置将包含诸如Ga等的元素的化合物半导体的基板的表面整理到所需的平坦度，使得在实际处理时间内可以以高的表面精度使表面变平。 在存在水的情况下，例如弱酸性水，溶于其中的空气的水或电解离子水，由包含Ga，Al和In中的任何一种的化合物半导体制成的基板的表面和抛光垫的表面 在保持与基板保持接触的表面的区域中具有导电构件）相对移动，同时保持彼此接触，从而抛光基板的表面。

公开(公告)号：US20120001193A1

公开(公告)日：2012-01-05

申请号：US13138635

申请日：2010-03-19

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L29/20 ,  B24B41/06 ,  B24B1/00

CPC classification number: B24B37/0056

Abstract: A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.

Abstract translation: 抛光方法可以在实际的处理时间和高表面精度处理和平坦化含Ga元素的化合物半导体的衬底的表面。 抛光方法包括：在包含含有Ga离子的中性pH缓冲溶液的处理溶液（14）的存在下，使含Ga元素的化合物半导体衬底（16）与抛光工具（10）接触; 用光照射衬底的表面或向衬底施加偏置电位，或者在用衬底照射衬底的表面的同时向衬底施加偏置电位，从而在衬底的表面上形成Ga氧化物（16a）; 并且同时相对于彼此移动基板和抛光工具以抛光和去除形成在基板表面上的Ga氧化物。

公开(公告)号：US09233449B2

公开(公告)日：2016-01-12

申请号：US13138635

申请日：2010-03-19

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L21/461 ,  B24B37/005

CPC classification number: B24B37/0056

Abstract: A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.

Abstract translation: 抛光方法可以在实际的处理时间和高表面精度处理和平坦化含Ga元素的化合物半导体的衬底的表面。 抛光方法包括：在包含含有Ga离子的中性pH缓冲溶液的处理溶液（14）的存在下，使含Ga元素的化合物半导体衬底（16）与抛光工具（10）接触; 用光照射衬底的表面或向衬底施加偏置电位，或者在用衬底照射衬底的表面的同时向衬底施加偏置电位，从而在衬底的表面上形成Ga氧化物（16a）; 并且同时相对于彼此移动基板和抛光工具以抛光和去除形成在基板表面上的Ga氧化物。