公开(公告)号：US08436494B2

公开(公告)日：2013-05-07

申请号：US12744449

申请日：2008-10-09

Applicant: Kazuto Yamauchi ,  Yasunori Murayama ,  Sadahiko Tanaka ,  Keitaro Takizawa ,  Kouichi Yamanoue ,  Arihiro Isomura ,  Kenji Kishiue

Inventor： Kazuto Yamauchi ,  Yasunori Murayama ,  Sadahiko Tanaka ,  Keitaro Takizawa ,  Kouichi Yamanoue ,  Arihiro Isomura ,  Kenji Kishiue

IPC: H02B1/24 ,  H01H83/00

CPC classification number: H03K17/962 ,  H03K2217/960705 ,  Y10T307/74 ,  Y10T307/766

Abstract: A touch sensor device comprises: a touch sensor 1 for sending out an output voltage signal S1 representing the presence or absence of an operation; an operation presence/absence determination unit 2 which, when the output voltage signal has a value equal to or more than a predetermined threshold value, determines that the operation has occurred; a stability determination unit 5 for detecting whether a differential signal S3 representing a differential value obtained by differentiating the output voltage signal is limited within a predetermined range or not; and a count-up timer 4 which, when a period during which the differential signal is limited within the predetermined range becomes a predetermined time period or longer on the premise that the output voltage signal has the value equal to or more than the predetermined threshold value, sends out an ON determination signal S5 and allows an external device 7 to operate.

Abstract translation: 触摸传感器装置包括：触摸传感器1，用于发出代表操作存在或不存在的输出电压信号S1; 操作存在/不存在确定单元2，当输出电压信号具有等于或大于预定阈值的值时，确定操作已经发生; 用于检测表示通过对输出电压信号进行微分而获得的差分值的差分信号S3是否被限制在预定范围内的稳定性确定单元5; 以及在输出电压信号具有等于或大于预定阈值的前提下，当差分信号被限制在预定范围内的时段变为预定时间段或更长时间的计数计时器4 发出ON确定信号S5并允许外部设备7操作。

公开(公告)号：US20130010929A1

公开(公告)日：2013-01-10

申请号：US13519175

申请日：2010-12-28

Applicant: Kazuto Yamauchi ,  Takashi Kimura ,  Takashi Tsumura

Inventor： Kazuto Yamauchi ,  Takashi Kimura ,  Takashi Tsumura

IPC: G21K1/06 ,  G21K1/087 ,  H01L41/22

CPC classification number: G21K1/06 ,  G21K2201/064 ,  G21K2201/067 ,  Y10T29/42

Abstract: The device is configured from: a reflective surface shape controllable mirror in which a band-shaped X-ray reflective surface 2 is formed on a central portion of a front surface of a substrate 1, reference planes 3 are formed along both sides of the X-ray reflective surface, and a plurality of piezoelectric elements 4 are attached to at least one of front and back surfaces of the substrate so as to be arranged in the longitudinal direction of the X-ray reflective surface on both side portions of the substrate, and a multichannel control system for applying a voltage to each of the piezoelectric elements.

Abstract translation: 该装置由以下部件构成：反射面形状可控反射镜，其中在基板1的前表面的中心部分上形成带状X射线反射表面2，基准平面3沿X的两侧形成 射线反射表面，并且多个压电元件4被附着到基板的前表面和后表面中的至少一个上，以便被布置在基板的两侧部分上的X射线反射表面的纵向方向上， 以及用于向每个压电元件施加电压的多通道控制系统。

公开(公告)号：US20120276474A1

公开(公告)日：2012-11-01

申请号：US13455740

申请日：2012-04-25

Applicant: Kazuto YAMAUCHI ,  Tsutomu SHOKI ,  Takeyuki YAMADA

Inventor： Kazuto YAMAUCHI ,  Tsutomu SHOKI ,  Takeyuki YAMADA

IPC: G03F1/76 ,  G03F1/50 ,  B08B5/00 ,  B08B3/02 ,  B08B3/08

CPC classification number: H01L21/02052 ,  B08B3/02 ,  B24C1/04 ,  B24C7/0007 ,  G03F1/82 ,  H01L21/67051 ,  H01L21/67057

Abstract: The present invention is a method of cleaning a substrate, comprising cleaning at least one surface of a substrate located in a liquid by injecting pressurized cleaning liquid containing bubbles or cleaning particles from a injection nozzle to at least one surface of the substrate.

Abstract translation: 本发明是一种清洗基材的方法，包括通过将含有气泡或清洁颗粒的加压清洗液从注射喷嘴注入基材的至少一个表面来清洗位于液体中的基材的至少一个表面。

公开(公告)号：US20120244649A1

公开(公告)日：2012-09-27

申请号：US13511802

申请日：2010-12-14

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/32125 ,  B24B37/0053 ,  B24B37/042 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  H01L21/02024

Abstract: A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).

Abstract translation: 一种抛光方法和抛光装置，特别适用于将包含诸如Ga等的元素的化合物半导体的基板的表面整理到期望的平坦度，使得含有元素的化合物半导体的基板的表面 的Ga可以在实际的处理时间内以高表面精度平坦化。 在存在水（232）如弱酸水，溶于其中的空气的水或电解离子水的存在下，由包含Ga，Al和In中的任一个的化合物半导体制成的基板（142）的表面和 在与基板（142）保持接触的表面的区域中具有导电构件（264）的抛光垫（242）的表面相对移动，同时保持彼此接触，从而抛光表面 衬底（142）。

公开(公告)号：US20120241087A1

公开(公告)日：2012-09-27

申请号：US13449622

申请日：2012-04-18

Applicant: Kazuto YAMAUCHI ,  Yasuhisa Sano

Inventor： Kazuto YAMAUCHI ,  Yasuhisa Sano

IPC: C23F1/08

CPC classification number: B81C1/00539 ,  Y10T428/31678 ,  Y10T442/20

Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.

Abstract translation: 催化剂辅助化学处理方法是一种具有高处理效率并且适于在不小于几十μm的空间波长范围内进行处理的新型加工方法。 催化剂辅助化学处理方法包括：将工件浸入其中溶解有含卤素分子的处理溶液中，所述工件通常不溶于所述处理溶液; 并将铂，金或陶瓷固体催化剂与工件的加工表面接近或接触，从而通过溶解在通过在表面上产生的卤素自由基之间的化学反应产生的卤化物的处理溶液中来处理工件 催化剂和工件的表面原子。

公开(公告)号：US20100273381A1

公开(公告)日：2010-10-28

申请号：US12832194

申请日：2010-07-08

Applicant: Kazuto YAMAUCHI ,  Yasuhisa Sano

Inventor： Kazuto YAMAUCHI ,  Yasuhisa Sano

IPC: B32B5/02 ,  B32B15/08 ,  B32B18/00

CPC classification number: B81C1/00539 ,  Y10T428/31678 ,  Y10T442/20

Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.

Abstract translation: 催化剂辅助化学处理方法是一种具有高处理效率并且适于在不小于几十μm的空间波长范围内进行处理的新型加工方法。 催化剂辅助化学处理方法包括：将工件浸入其中溶解有含卤素分子的处理溶液中，所述工件通常不溶于所述处理溶液; 并将铂，金或陶瓷固体催化剂与工件的加工表面接近或接触，从而通过溶解在通过在表面上产生的卤素自由基之间的化学反应产生的卤化物的处理溶液中来处理工件 催化剂和工件的表面原子。

公开(公告)号：US20100183122A1

公开(公告)日：2010-07-22

申请号：US12440121

申请日：2007-12-27

Applicant: Kazuto Yamauchi ,  Hidekazu Mimura ,  Hiromi Okada

Inventor： Kazuto Yamauchi ,  Hidekazu Mimura ,  Hiromi Okada

IPC: G21K1/06

CPC classification number: G21K1/06 ,  G02B5/0891 ,  G02B5/10 ,  G21K2201/067

Abstract: An X-ray condensing method and its device are provided with an X-ray mirror that has a wavefront adjustable function to finely adjust a wavefront of a reflecting X-ray, measure an X-ray intensity distribution in the vicinity of a focus, measure an X-ray intensity distribution in the vicinity of the X-ray mirror or use a known X-ray intensity distribution of an incident X-ray, calculate a complex amplitude distribution at the reflective surface by using a phase restoration method from the X-ray intensity distribution in the vicinity of the focus and the X-ray intensity distribution in the vicinity of the reflective surface, calculate a wavefront aberration of an X-ray condensing optical system from the complex amplitude distribution, and control the reflective surface of the X-ray mirror with the wavefront adjustable function so that the wavefront aberration is minimized.

Abstract translation: X射线聚焦方法及其装置设置有具有波前可调功能的X射线镜，以精细地调整反射X射线的波前，测量焦点附近的X射线强度分布，测量 在X射线反射镜附近的X射线强度分布或使用已知的入射X射线的X射线强度分布，通过使用来自X射线透镜的相位恢复方法计算出反射面上的复振幅分布， 在焦点附近的射线强度分布和反射面附近的X射线强度分布，从复振幅分布计算出X射线聚光光学系统的波前像差，并控制X的反射面 具有波前可调功能的光镜，使波前像差最小化。

公开(公告)号：US07616324B2

公开(公告)日：2009-11-10

申请号：US11992096

申请日：2007-02-15

Applicant: Kazuto Yamauchi ,  Hidekazu Mimura

Inventor： Kazuto Yamauchi ,  Hidekazu Mimura

IPC: G01B11/02

CPC classification number: G01B11/2441 ,  G01B9/02085 ,  G01B2290/60 ,  G01M11/005

Abstract: To provide a method for measuring a plane mirror or a curved surface mirror close to plane mirror for condensing hard X-rays or soft X-rays used in a radiation light facility, especially an elliptical or tubular object having a steep profile exceeding 1×10−4 rad, ultra precisely with a precision on nano order or sub-nano order. Overall profile is measured by using overall profile data obtained from a Fizeau interferometer and stitching a plurality of micromeasurement data from a Michelson microinterferometer. A curved surface measured and a reference plane are measured simultaneously by the Fizeau interferometer, a plurality of pieces of partial profile data in a region narrower than the curved surface measured are acquired simultaneously by inclining the curved surface measured and the reference plane simultaneously and sequentially with respect to a reference plane, relative angle between the pieces of partial profile data is measured as the inclination angle of the reference plane, and adjoining pieces of partial profile data are stitched by utilizing coincidence between the inclination angle and an overlapped region thus obtaining overall profile data.

Abstract translation: 提供一种用于测量靠近平面镜的平面镜或曲面镜的方法，用于冷凝在辐射光设备中使用的硬X射线或软X射线，特别是具有超过1×10 -4的陡峭轮廓的椭圆形或管状物体 rad，超精密，具有纳米级或亚纳米级的精度。 通过使用从Fizeau干涉仪获得的总体轮廓数据并拼接来自迈克尔逊微型干涉仪的多个测微数据来测量总体轮廓。 通过Fizeau干涉仪同时测量弯曲表面和参考平面，通过将测量的曲面和参考平面同时并顺序地倾斜并测量的曲面比通过测量的曲面更窄的区域中的多个部分轮廓数据被同时获取 测量部分轮廓数据之间的相对角度作为参考平面的倾斜角度，并且通过利用倾斜角度和重叠区域之间的一致来缝合相邻的部分轮廓数据片段，从而获得总体轮廓 数据。

公开(公告)号：US20090135431A1

公开(公告)日：2009-05-28

申请号：US11992096

申请日：2007-02-15

Applicant: Kazuto Yamauchi ,  Hidekazu Mimura

Inventor： Kazuto Yamauchi ,  Hidekazu Mimura

IPC: G01B11/24

CPC classification number: G01B11/2441 ,  G01B9/02085 ,  G01B2290/60 ,  G01M11/005

Abstract: To provide a method for measuring a plane mirror or a curved surface mirror close to plane mirror for condensing hard X-rays or soft X-rays used in a radiation light facility, especially an elliptical or tubular object having a steep profile exceeding 1×10−4 rad, ultra precisely with a precision on nano order or sub-nano order. Overall profile is measured by using overall profile data obtained from a Fizeau interferometer and stitching a plurality of micromeasurement data from a Michelson microinterferometer. A curved surface measured and a reference plane are measured simultaneously by the Fizeau interferometer, a plurality of pieces of partial profile data in a region narrower than the curved surface measured are acquired simultaneously by inclining the curved surface measured and the reference plane simultaneously and sequentially with respect to a reference plane, relative angle between the pieces of partial profile data is measured as the inclination angle of the reference plane, and adjoining pieces of partial profile data are stitched by utilizing coincidence between the inclination angle and an overlapped region thus obtaining overall profile data.

Abstract translation: 提供一种用于测量靠近平面镜的平面镜或曲面镜的方法，用于冷凝在辐射光设备中使用的硬X射线或软X射线，特别是具有超过1×10 -4的陡峭轮廓的椭圆形或管状物体 rad，超精密，具有纳米级或亚纳米级的精度。 通过使用从Fizeau干涉仪获得的总体轮廓数据并拼接来自迈克尔逊微型干涉仪的多个测微数据来测量总体轮廓。 通过Fizeau干涉仪同时测量弯曲表面和参考平面，通过将测量的曲面和参考平面同时并顺序地倾斜并测量的曲面比通过测量的曲面更窄的区域中的多个部分轮廓数据被同时获取 测量部分轮廓数据之间的相对角度作为参考平面的倾斜角度，并且通过利用倾斜角度和重叠区域之间的一致来缝合相邻的部分轮廓数据片段，从而获得总体轮廓 数据。

公开(公告)号：US20080265788A1

公开(公告)日：2008-10-30

申请号：US12109143

申请日：2008-04-24

Applicant: Kazuto YAMAUCHI ,  Yasunori MURAYAMA ,  Sadahiko TANAKA ,  Keitaro TAKIZAWA ,  Kouichi YAMANOUE

Inventor： Kazuto YAMAUCHI ,  Yasunori MURAYAMA ,  Sadahiko TANAKA ,  Keitaro TAKIZAWA ,  Kouichi YAMANOUE

IPC: G09G3/00

CPC classification number: H03K17/962 ,  H03K2217/960795 ,  Y10S323/904

Abstract: A touch switch is composed of an EL light emitting layer configured by stacking a fluorescent layer and an insulation layer between first electrodes and a second electrode, a judgment means for making a judgment on touch manipulation with the first electrode by an operator and an EL driving unit for driving the EL light emitting layer for light emitting, with each of a plurality of first electrodes, each of plurality of fluorescent layers and each of plurality of insulation layers being provided as a set and the second electrode being provided as a single electrode with respect to the plurality of first electrodes, wherein the judgment means makes a judgment on which of the plurality of first electrodes has been touched by an operator on the basis of a high-frequency component inputted from the second electrode through the first electrode each time the touch switch is touched by an operator.

Abstract translation: 触摸开关由通过在第一电极和第二电极之间堆叠荧光层和绝缘层而构成的EL发光层构成，用于通过操作者判断与第一电极的触摸操作的判断装置和EL驱动 用于驱动用于发光的EL发光层的单元，其中多个第一电极中的每一个，多个荧光层中的每一个以及多个绝缘层中的每一个设置为一组，并且所述第二电极设置为单个电极， 相对于多个第一电极，其中判断装置基于从每个第一电极从第二电极输入的高频分量来判断操作者已经接触了多个第一电极中的哪一个， 触摸开关被操作者触摸。