Polishing method, polishing apparatus and GaN wafer
    1.
    发明授权
    Polishing method, polishing apparatus and GaN wafer 有权
    抛光方法,抛光装置和GaN晶圆

    公开(公告)号:US09233449B2

    公开(公告)日:2016-01-12

    申请号:US13138635

    申请日:2010-03-19

    CPC classification number: B24B37/0056

    Abstract: A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.

    Abstract translation: 抛光方法可以在实际的处理时间和高表面精度处理和平坦化含Ga元素的化合物半导体的衬底的表面。 抛光方法包括:在包含含有Ga离子的中性pH缓冲溶液的处理溶液(14)的存在下,使含Ga元素的化合物半导体衬底(16)与抛光工具(10)接触; 用光照射衬底的表面或向衬底施加偏置电位,或者在用衬底照射衬底的表面的同时向衬底施加偏置电位,从而在衬底的表面上形成Ga氧化物(16a); 并且同时相对于彼此移动基板和抛光工具以抛光和去除形成在基板表面上的Ga氧化物。

    Flattening method and flattening apparatus
    2.
    发明授权
    Flattening method and flattening apparatus 有权
    扁平化方法和压平装置

    公开(公告)号:US08734661B2

    公开(公告)日:2014-05-27

    申请号:US12285737

    申请日:2008-10-14

    Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

    Abstract translation: 通过利用CARE方法的优点并弥补缺点的扁平化方法可以以足够的加工速率进行工件表面的去除处理,并且可以提供具有增强的平坦度的加工表面,而不会在加工表面中留下损伤 。 平坦化方法包括至少两个表面去除步骤和至少两个清洁步骤,最终表面去除步骤是催化剂参考的蚀刻步骤,包括将工件浸入包含氢卤酸,过氧化氢水和臭氧中的至少一种的处理溶液中 水,并且使催化剂压板的表面与待加工表面接触或靠近工件表面进行处理,所述催化剂压板在表面上具有选自铂,金, 陶瓷固体催化剂,过渡金属,玻璃和酸性或碱性固体催化剂。

    Bearing apparatus
    3.
    发明授权
    Bearing apparatus 有权
    轴承装置

    公开(公告)号:US08136998B2

    公开(公告)日:2012-03-20

    申请号:US12314366

    申请日:2008-12-09

    CPC classification number: F16C33/60 F16C33/4694 F16C33/516 F16C33/565

    Abstract: A bearing apparatus includes: two split outer ring halves which are mounted to the housing; a plurality of rolling elements which are provided so as to roll on the two split outer ring halves; and a cage which holds the rolling elements such that the rolling elements are disposed at substantially equal intervals in a circumferential direction of the cage and which is split at a position of the cage to form joint surfaces, an outside diameter of the cage being guided by inner circumferential surfaces of the split outer ring halves. An outside diametrical dimension in a normal direction to the joint surfaces is made larger than an outside diametrical dimension of the cage in a direction parallel to the joint surface, and vicinity of an outside diametrical position of the cage lying in the normal direction is made to be guided by the outer ring halves.

    Abstract translation: 轴承装置包括:两个分开的外圈半部,其安装在壳体上; 多个滚动元件,其设置成在两个分割的外圈半部上滚动; 以及保持所述滚动元件的保持架,使得所述滚动元件在所述保持架的圆周方向上以大致相等的间隔设置,并且在所述保持架的位置处被分割以形成接合面,所述保持架的外径由 分割外圈半部的内圆周表面。 在接合面的法线方向上的外径尺寸比保持架的与接合面平行的方向的外径尺寸大,使沿着法线方向的保持架的外径位置附近 由外圈引导。

    Evaluation apparatus of hub unit and evaluating method of hub unit
    4.
    发明授权
    Evaluation apparatus of hub unit and evaluating method of hub unit 有权
    集线器单元评估装置和集线器单元评估方法

    公开(公告)号:US07821950B2

    公开(公告)日:2010-10-26

    申请号:US12219586

    申请日:2008-07-24

    CPC classification number: G01M13/045

    Abstract: In an evaluation apparatus of a hub unit, a signal processing unit outputs frequency analysis signals which indicate such a result obtained by that an output signal of an acceleration sensor fixed on a hub unit by a magnet is processed via an A/D converting unit and an envelope detecting unit, and thereafter, the processed sensor signal is analyzed for a frequency analysis by an FFT unit. Then, an evaluation output unit evaluates damage conditions of the hub unit based upon signal strengths of specific frequencies, and overall values, which are acquired from the frequency analysis signals, and then, outputs the evaluated damage condition to a display unit.

    Abstract translation: 在集线器单元的评估装置中,信号处理单元输出表示通过A / D转换单元处理通过磁体固定在集线器单元上的加速度传感器的输出信号得到的结果的频率分析信号, 包络检测单元,此后,对经处理的传感器信号进行FFT单元的频率分析。 然后,评价输出单元基于特定频率的信号强度和从频率分析信号获取的总体值来评估集线器单元的损坏状况,然后将评估的损坏状况输出到显示单元。

    CATALYST-AIDED CHEMICAL PROCESSING METHOD AND APPARATUS
    5.
    发明申请
    CATALYST-AIDED CHEMICAL PROCESSING METHOD AND APPARATUS 审中-公开
    催化辅助化学处理方法和装置

    公开(公告)号:US20100147463A1

    公开(公告)日:2010-06-17

    申请号:US12636069

    申请日:2009-12-11

    Abstract: A catalyst-aided chemical processing method can process hard-to-process materials, especially SiC, GaN, etc. whose importance as electronic device materials is increasing these days, with high processing efficiency and high precision even for a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: putting a workpiece in a processing liquid in which halogen-containing molecules are dissolved; and moving the workpiece and a catalyst composed of molybdenum or a molybdenum compound relative to each other while keeping the catalyst in contact with or close proximity to a surface to be processed of the workpiece, thereby processing the surface of the workpiece.

    Abstract translation: 催化剂辅助化学处理方法可以处理难加工材料,特别是SiC,GaN等,其电子器件材料的重要性日益增加,即使对于不小于等于的空间波长范围,处理效率高,精度高 比几十μm。 催化剂辅助化学处理方法包括:将工件放入其中溶解含卤素分子的处理液中; 并且使工件和由钼或钼化合物组成的催化剂相对于彼此移动,同时保持催化剂与待加工的表面接触或接近工件,从而处理工件的表面。

    Bearing apparatus
    6.
    发明申请
    Bearing apparatus 有权
    轴承装置

    公开(公告)号:US20090154862A1

    公开(公告)日:2009-06-18

    申请号:US12314366

    申请日:2008-12-09

    CPC classification number: F16C33/60 F16C33/4694 F16C33/516 F16C33/565

    Abstract: A bearing apparatus includes: two split outer ring halves which are mounted to the housing; a plurality of rolling elements which are provided so as to roll on the two split outer ring halves; and a cage which holds the rolling elements such that the rolling elements are disposed at substantially equal intervals in a circumferential direction of the cage and which is split at a position of the cage to form joint surfaces, an outside diameter of the cage being guided by inner circumferential surfaces of the split outer ring halves. An outside diametrical dimension in a normal direction to the joint surfaces is made larger than an outside diametrical dimension of the cage in a direction parallel to the joint surface, and vicinity of an outside diametrical position of the cage lying in the normal direction is made to be guided by the outer ring halves.

    Abstract translation: 轴承装置包括:两个分开的外圈半部,其安装在壳体上; 多个滚动元件,其设置成在两个分割的外圈半部上滚动; 以及保持所述滚动元件的保持架,使得所述滚动元件在所述保持架的圆周方向上以大致相等的间隔设置,并且在所述保持架的位置处被分割以形成接合面,所述保持架的外径由 分割外圈半部的内圆周表面。 在接合面的法线方向上的外径尺寸比保持架的与接合面平行的方向的外径尺寸大,使沿着法线方向的保持架的外径位置附近 由外圈引导。

    Catalyst-aided chemical processing method and apparatus
    7.
    发明申请
    Catalyst-aided chemical processing method and apparatus 有权
    催化辅助化学处理方法和装置

    公开(公告)号:US20080073222A1

    公开(公告)日:2008-03-27

    申请号:US11892780

    申请日:2007-08-27

    Abstract: A catalyst-aided chemical processing method can process hard-to-process materials, especially SiC, GaN, etc. whose importance as electronic device materials is increasing these days, with high processing efficiency and high precision even for a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: putting a workpiece in a processing liquid in which halogen-containing molecules are dissolved; and moving the workpiece and a catalyst composed of molybdenum or a molybdenum compound relative to each other while keeping the catalyst in contact with or close proximity to a surface to be processed of the workpiece, thereby processing the surface of the workpiece.

    Abstract translation: 催化剂辅助化学处理方法可以处理难加工材料,特别是SiC,GaN等,其电子器件材料的重要性日益增加,即使对于不小于等于的空间波长范围,处理效率高,精度高 比几十个妈妈。 催化剂辅助化学处理方法包括:将工件放入其中溶解含卤素分子的处理液中; 并且使工件和由钼或钼化合物组成的催化剂相对于彼此移动,同时保持催化剂与待加工的表面接触或接近工件,从而处理工件的表面。

    POLISHING METHOD, POLISHING APPARATUS AND POLISHING TOOL
    8.
    发明申请
    POLISHING METHOD, POLISHING APPARATUS AND POLISHING TOOL 有权
    抛光方法,抛光装置和抛光工具

    公开(公告)号:US20120244649A1

    公开(公告)日:2012-09-27

    申请号:US13511802

    申请日:2010-12-14

    Abstract: A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).

    Abstract translation: 一种抛光方法和抛光装置,特别适用于将包含诸如Ga等的元素的化合物半导体的基板的表面整理到期望的平坦度,使得含有元素的化合物半导体的基板的表面 的Ga可以在实际的处理时间内以高表面精度平坦化。 在存在水(232)如弱酸水,溶于其中的空气的水或电解离子水的存在下,由包含Ga,Al和In中的任一个的化合物半导体制成的基板(142)的表面和 在与基板(142)保持接触的表面的区域中具有导电构件(264)的抛光垫(242)的表面相对移动,同时保持彼此接触,从而抛光表面 衬底(142)。

    SPLIT OUTER RING, SPLIT ROLLING BEARING USING THE SAME RING AND CONSTRUCTION AND METHOD OF MOUNTING THE SAME ROLLING BEARING
    9.
    发明申请
    SPLIT OUTER RING, SPLIT ROLLING BEARING USING THE SAME RING AND CONSTRUCTION AND METHOD OF MOUNTING THE SAME ROLLING BEARING 有权
    分离外圈,使用相同的环的分离滚动轴承和安装相同的滚动轴承的构造和方法

    公开(公告)号:US20110064350A1

    公开(公告)日:2011-03-17

    申请号:US12736880

    申请日:2009-05-18

    CPC classification number: F16C9/02 F16C19/466 F16C33/60 F16C2240/46

    Abstract: There are provided a split outer ring which can suppress the reduction in durability and which can suppress largely the generation of noise or vibration which is caused in association with the passage of rolling elements over a mating surface and a split rolling bearing which employs the same outer ring.A split outer ring 2 according to the invention has first and second split outer ring members 5, 6 which are formed into a cylindrical shape by being butted against each other at circumferential end portions. First flat plane portions 7 and a V-shaped recess portion 8 which is recessed in a circumferential direction are formed at one end portion 5a of the circumferential end portions which are butted against each other. Secondary flat plane portions 9 which are to be brought into abutment with the first flat plane portions 7 and a projecting portion 10 which projects in the circumferential direction from the second flat plane portion 9 so as to be introduced into the recess portion 8 are formed at an end portion 6a which is to be butted against the end portion 5a. A space S is formed between the recess portion 8 and the projecting portion 10 so as to avoid a contact between a bottom portion 8b of the recess portion 8 and a vertex portion 10b of the projecting portion 10.

    Abstract translation: 提供了一种能够抑制耐久性降低的分割外圈,并且能够大大抑制与滚动体在配合面上的通过相关联的噪音或振动的产生以及采用相同外部的分离滚动轴承 环。 根据本发明的分割外圈2具有通过在周向端部彼此对接而形成为圆筒形的第一和第二分割外圈构件5,6。 第一平面部7和在圆周方向上凹陷的V形凹部8形成在彼此对接的周向端部的一个端部5a处。 要与第一平面部分7抵接的次平面部分9和从第二平面部分9沿圆周方向突出以引入凹部8的突出部分10形成在 与顶端部5a抵接的端部6a。 在凹部8与突出部10之间形成有空间S,以避免凹部8的底部8b与突出部10的顶点10b的接触。

Patent Agency Ranking