公开(公告)号：US08912095B2

公开(公告)日：2014-12-16

申请号：US13511802

申请日：2010-12-14

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L21/302 ,  H01L21/461 ,  B24B49/12 ,  B24B37/30 ,  B24B37/04 ,  H01L21/02 ,  B24B37/005 ,  B24B37/10

CPC classification number: H01L21/32125 ,  B24B37/0053 ,  B24B37/042 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  H01L21/02024

Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.

Abstract translation: 抛光方法和抛光装置将包含诸如Ga等的元素的化合物半导体的基板的表面整理到所需的平坦度，使得在实际处理时间内可以以高的表面精度使表面变平。 在存在水的情况下，例如弱酸性水，溶于其中的空气的水或电解离子水，由包含Ga，Al和In中的任何一种的化合物半导体制成的基板的表面和抛光垫的表面 在保持与基板保持接触的表面的区域中具有导电构件）相对移动，同时保持彼此接触，从而抛光基板的表面。

公开(公告)号：US08119320B2

公开(公告)日：2012-02-21

申请号：US12057157

申请日：2008-03-27

Applicant: Ryuji Shinohara ,  Yasuhisa Sano ,  Kazuma Takeno ,  Hiroshi Takehara

Inventor： Ryuji Shinohara ,  Yasuhisa Sano ,  Kazuma Takeno ,  Hiroshi Takehara

IPC: G03C8/00 ,  B65D30/00

CPC classification number: B41M5/52 ,  B41M5/44 ,  B41M5/5254 ,  B41M2205/02 ,  B41M2205/28 ,  B41M2205/32 ,  B41M2205/38

Abstract: A heat-sensitive transfer image-receiving sheet, in which the heat-sensitive transfer image-receiving sheet is provided in a form that it is wound into a roll and all periphery of the roll is covered with a protective sheet, and in which the heat-sensitive transfer image-receiving sheet contains, on a support, at least one receptor layer containing a latex polymer, and at least one heat-insulating layer containing hollow polymer particles.

Abstract translation: 一种热敏转印图像接收片，其中热敏转印图像接收片以卷绕成卷的形式设置，并且卷的全部周边被保护片覆盖，并且其中 热敏转印图像接收片材在载体上含有至少一个含有胶乳聚合物的受体层和至少一个含有中空聚合物颗粒的绝热层。

公开(公告)号：US20120001193A1

公开(公告)日：2012-01-05

申请号：US13138635

申请日：2010-03-19

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L29/20 ,  B24B41/06 ,  B24B1/00

CPC classification number: B24B37/0056

Abstract: A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.

Abstract translation: 抛光方法可以在实际的处理时间和高表面精度处理和平坦化含Ga元素的化合物半导体的衬底的表面。 抛光方法包括：在包含含有Ga离子的中性pH缓冲溶液的处理溶液（14）的存在下，使含Ga元素的化合物半导体衬底（16）与抛光工具（10）接触; 用光照射衬底的表面或向衬底施加偏置电位，或者在用衬底照射衬底的表面的同时向衬底施加偏置电位，从而在衬底的表面上形成Ga氧化物（16a）; 并且同时相对于彼此移动基板和抛光工具以抛光和去除形成在基板表面上的Ga氧化物。

公开(公告)号：US20080241439A1

公开(公告)日：2008-10-02

申请号：US12056091

申请日：2008-03-26

Applicant: Kiyoshi IRITA ,  Yasuhisa Sano

Inventor： Kiyoshi IRITA ,  Yasuhisa Sano

IPC: B41M5/40

CPC classification number: B41M5/5227 ,  B41M5/42

Abstract: A heat-sensitive transfer image-receiving sheet, containing, on a support, at least one dye-receptive layer containing latex polymer and at least one heat-insulating layer, at least said receptive layer and a layer adjacent thereto being formed by a water-based simultaneous multilayer coating method, wherein said sheet contains at least one solid dispersion having an average particle diameter of 1.0 g μm or less of at least one material selected from a compound represented by formula (L1) and wax: wherein R01 represents —C(═O)R or a hydrogen atom, in which R represents an aliphatic group which may have a substituent, and a plurality of Rol 's are the same as or different from each other, but at least one of R01's is —C(═O)R; and n represents 0 or 1.

Abstract translation: 一种热敏转印图像接受片，其在载体上含有至少一个含有胶乳聚合物和至少一个绝热层的染料接受层，至少所述接收层和与其相邻的层由水形成 的同时多层涂布方法，其中所述片材含有平均粒径为1.0g或更少的至少一种选自式（L1）表示的化合物和蜡的至少一种固体分散体：其中R 1， 01表示-C（-O）R或氢原子，其中R表示可以具有取代基的脂肪族基团，多个Rol's彼此相同或不同，但在 R 01中的至少一个是-C（-O）R; n表示0或1。

公开(公告)号：US4607006A

公开(公告)日：1986-08-19

申请号：US658955

申请日：1984-10-09

Applicant: Shigeo Hirano ,  Yasuhisa Sano ,  Haruo Takei ,  Tsutomu Miyasaka ,  Shinsaku Fujita

Inventor： Shigeo Hirano ,  Yasuhisa Sano ,  Haruo Takei ,  Tsutomu Miyasaka ,  Shinsaku Fujita

IPC: G03C1/10 ,  G03C1/28 ,  G03C1/02 ,  G03C1/06 ,  G03C1/08

CPC classification number: G03C1/28 ,  G03C1/10

Abstract: A silver halide photographic light-sensitive material is described containing at least one electron-donative, silver halide-adsorptive compound represented by the following general formula (A) or (B), which is not a spectral sensitizing agent for silver halide or a nucleating agent:D--L--X (A)D--X (B)wherein D represents an electron donative atomic group comprising an aromatic ring or hetero ring, which may be unsubstituted or substituted with at least one substituent; L represents a linkage group containing at least one of C, N, S or O; and X represents a group which is adsorptive with a silver halide-adsorptive group containing at least one of C, N, S, O or Se, said N being optionally quarternized.

Abstract translation: 描述了卤化银摄影感光材料，其含有至少一种由以下通式（A）或（B）表示的给电子，卤化银吸附化合物，其不是用于卤化银的光谱增感剂或成核剂 代理：DLX（A）DX（B）其中D表示包含芳族环或杂环的给电子原子团，其可以是未取代的或被至少一个取代基取代; L表示含有C，N，S或O中至少一个的连接基团; X表示与含有C，N，S，O或Se中的至少一种的卤化银吸附基团吸附的基团，所述N任选被季铵化。

公开(公告)号：US20120244649A1

公开(公告)日：2012-09-27

申请号：US13511802

申请日：2010-12-14

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Takeshi Okamoto ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/32125 ,  B24B37/0053 ,  B24B37/042 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  H01L21/02024

Abstract: A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).

Abstract translation: 一种抛光方法和抛光装置，特别适用于将包含诸如Ga等的元素的化合物半导体的基板的表面整理到期望的平坦度，使得含有元素的化合物半导体的基板的表面 的Ga可以在实际的处理时间内以高表面精度平坦化。 在存在水（232）如弱酸水，溶于其中的空气的水或电解离子水的存在下，由包含Ga，Al和In中的任一个的化合物半导体制成的基板（142）的表面和 在与基板（142）保持接触的表面的区域中具有导电构件（264）的抛光垫（242）的表面相对移动，同时保持彼此接触，从而抛光表面 衬底（142）。

公开(公告)号：US20120241087A1

公开(公告)日：2012-09-27

申请号：US13449622

申请日：2012-04-18

Applicant: Kazuto YAMAUCHI ,  Yasuhisa Sano

Inventor： Kazuto YAMAUCHI ,  Yasuhisa Sano

IPC: C23F1/08

CPC classification number: B81C1/00539 ,  Y10T428/31678 ,  Y10T442/20

Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.

Abstract translation: 催化剂辅助化学处理方法是一种具有高处理效率并且适于在不小于几十μm的空间波长范围内进行处理的新型加工方法。 催化剂辅助化学处理方法包括：将工件浸入其中溶解有含卤素分子的处理溶液中，所述工件通常不溶于所述处理溶液; 并将铂，金或陶瓷固体催化剂与工件的加工表面接近或接触，从而通过溶解在通过在表面上产生的卤素自由基之间的化学反应产生的卤化物的处理溶液中来处理工件 催化剂和工件的表面原子。

公开(公告)号：US20100273381A1

公开(公告)日：2010-10-28

申请号：US12832194

申请日：2010-07-08

Applicant: Kazuto YAMAUCHI ,  Yasuhisa Sano

Inventor： Kazuto YAMAUCHI ,  Yasuhisa Sano

IPC: B32B5/02 ,  B32B15/08 ,  B32B18/00

CPC classification number: B81C1/00539 ,  Y10T428/31678 ,  Y10T442/20

Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of μm. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.

Abstract translation: 催化剂辅助化学处理方法是一种具有高处理效率并且适于在不小于几十μm的空间波长范围内进行处理的新型加工方法。 催化剂辅助化学处理方法包括：将工件浸入其中溶解有含卤素分子的处理溶液中，所述工件通常不溶于所述处理溶液; 并将铂，金或陶瓷固体催化剂与工件的加工表面接近或接触，从而通过溶解在通过在表面上产生的卤素自由基之间的化学反应产生的卤化物的处理溶液中来处理工件 催化剂和工件的表面原子。

公开(公告)号：US09233449B2

公开(公告)日：2016-01-12

申请号：US13138635

申请日：2010-03-19

Applicant: Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Shun Sadakuni ,  Keita Yagi

Inventor： Yasuhisa Sano ,  Kazuto Yamauchi ,  Junji Murata ,  Shun Sadakuni ,  Keita Yagi

IPC: H01L21/461 ,  B24B37/005

CPC classification number: B24B37/0056

Abstract: A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.

Abstract translation: 抛光方法可以在实际的处理时间和高表面精度处理和平坦化含Ga元素的化合物半导体的衬底的表面。 抛光方法包括：在包含含有Ga离子的中性pH缓冲溶液的处理溶液（14）的存在下，使含Ga元素的化合物半导体衬底（16）与抛光工具（10）接触; 用光照射衬底的表面或向衬底施加偏置电位，或者在用衬底照射衬底的表面的同时向衬底施加偏置电位，从而在衬底的表面上形成Ga氧化物（16a）; 并且同时相对于彼此移动基板和抛光工具以抛光和去除形成在基板表面上的Ga氧化物。

公开(公告)号：US08734661B2

公开(公告)日：2014-05-27

申请号：US12285737

申请日：2008-10-14

Applicant: Kazuto Yamauchi ,  Yasuhisa Sano ,  Hideyuki Hara ,  Junji Murata ,  Keita Yagi

Inventor： Kazuto Yamauchi ,  Yasuhisa Sano ,  Hideyuki Hara ,  Junji Murata ,  Keita Yagi

IPC: B44C1/22 ,  C23F1/08

CPC classification number: H01L21/67075 ,  B24B37/32 ,  H01L21/02019 ,  H01L21/30612 ,  H01L21/67207 ,  H01L21/67219 ,  H01L29/1608

Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

Abstract translation: 通过利用CARE方法的优点并弥补缺点的扁平化方法可以以足够的加工速率进行工件表面的去除处理，并且可以提供具有增强的平坦度的加工表面，而不会在加工表面中留下损伤 。 平坦化方法包括至少两个表面去除步骤和至少两个清洁步骤，最终表面去除步骤是催化剂参考的蚀刻步骤，包括将工件浸入包含氢卤酸，过氧化氢水和臭氧中的至少一种的处理溶液中 水，并且使催化剂压板的表面与待加工表面接触或靠近工件表面进行处理，所述催化剂压板在表面上具有选自铂，金， 陶瓷固体催化剂，过渡金属，玻璃和酸性或碱性固体催化剂。