公开(公告)号：US20060252243A1

公开(公告)日：2006-11-09

申请号：US11398659

申请日：2006-04-06

申请人： Daisuke Kishimoto ,  Takeshi Tawara ,  Shunsuke Izumi

发明人： Daisuke Kishimoto ,  Takeshi Tawara ,  Shunsuke Izumi

IPC分类号： H01L21/44 ,  H01L21/76

CPC分类号： H01L21/02378 ,  C30B25/12 ,  C30B25/14 ,  H01L21/02529 ,  H01L21/0262

摘要： An epitaxial film deposition system includes a reactor, a susceptor, a wafer heating unit, a reactant gas supply orifice, and an aperture for venting the reactant gas. The reactant gas is supplied to a reactor region between the susceptor and a graphite plate so as to circulate in layered flow in a direction along the reactor inner wall in the planar direction of a mounted SiC wafer. The temperature of the wafer is controlled by a high frequency coil and halogen lamps based on temperatures detected by a pyrometer. By circulating the reactant gas over the surface of the stationary wafer, it is possible to form, under various process conditions, an SiC epitaxial film having good film quality and good uniformity of film thickness, without providing any wafer rotation mechanism.

摘要翻译： 外延膜沉积系统包括反应器，基座，晶片加热单元，反应气体供应孔和用于排出反应气体的孔。 将反应气体供给到基座和石墨板之间的反应器区域，以便在安装的SiC晶片的平面方向上沿着反应器内壁的方向以分层流动循环。 基于由高温计检测的温度，由高频线圈和卤素灯控制晶片的温度。 通过将反应气体循环在固定晶片的表面上，可以在各种工艺条件下形成具有良好的膜质量和良好的膜厚均匀性的SiC外延膜，而不需要提供任何晶片旋转机构。

公开(公告)号：US20130062570A1

公开(公告)日：2013-03-14

申请号：US13594789

申请日：2012-08-25

申请人： Yuko Fukuyama ,  Shunsuke Izumi

发明人： Yuko Fukuyama ,  Shunsuke Izumi

IPC分类号： C07C65/21 ,  B01D59/44 ,  H01J49/04

CPC分类号： H01J49/0459 ,  G01N33/6848 ,  H01J49/0031 ,  H01J49/164

摘要： The present invention provides a novel compound that makes it possible to improve ionization efficiency of hydrophobic peptide. 5-alkoxy-2- or -3-hydroxybenzoic acid represented by the following formula (I): where R is an alkyl group having 6 to 10 carbon atoms and the substituted carboxyl group and hydroxyl group are ortho or meta to each other. A matrix additive for mass spectrometry, which is represented by the above formula (I). The above additive which is added to a matrix for mass spectrometry selected from the group consisting of α-cyano-4-hydroxycinnamic acid, 2,5-dihydroxybenzoic acid, sinapic acid, and 1,5-diaminonaphthalene. The above additive which is used for mass spectrometry of a hydrophobic peptide.

摘要翻译： 本发明提供能够提高疏水性肽的离子化效率的新化合物。 由下式（I）表示的5-烷氧基-2-或3-羟基苯甲酸：其中R是具有6至10个碳原子的烷基，取代的羧基和羟基彼此邻位或间隔。 用于质谱的基质添加剂，其由上式（I）表示。 将上述添加剂添加到选自α-氰基-4-羟基肉桂酸，2,5-二羟基苯甲酸，芥子酸和1,5-二氨基萘中的质谱用基质中。 用于疏水性肽质谱的上述添加剂。

公开(公告)号：US20070015333A1

公开(公告)日：2007-01-18

申请号：US11452053

申请日：2006-06-13

申请人： Daisuke Kishimoto ,  Takeshi Tawara ,  Takashi Tsuji ,  Shunsuke Izumi

发明人： Daisuke Kishimoto ,  Takeshi Tawara ,  Takashi Tsuji ,  Shunsuke Izumi

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/02057 ,  H01L21/0475 ,  H01L21/049 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： A method of manufacturing a semiconductor device is disclosed that includes the treating the surface of a SiC semiconductor substrate prior to forming a gate oxide film on the SiC semiconductor substrate in order to etch the SiC semiconductor substrate by several nm to 0.1 μm with hydrogen in a reaction furnace. The treating is conducted a reduced pressure in the furnace, at a temperature of 1500° C. or higher. The manufacturing method facilitates the removal of particles and oxide residues remaining on the trench inner wall after trench etching in the manufacturing process for manufacturing a SiC semiconductor device having a fine trench-type MOS gate structure.

摘要翻译： 公开了一种制造半导体器件的方法，其包括在SiC半导体衬底上形成栅极氧化膜之前处理SiC半导体衬底的表面，以便将SiC半导体衬底在 反应炉。 在1500℃以上的温度下，在炉内进行减压处理。 在制造具有细沟槽型MOS栅极结构的SiC半导体器件的制造工艺的制造工艺中，制造方法有助于在沟槽蚀刻后残留在沟槽内壁上的颗粒和氧化物残余物的去除。