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公开(公告)号：US20070015333A1
公开(公告)日：2007-01-18
申请号：US11452053
申请日：2006-06-13
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/02057 , H01L21/0475 , H01L21/049 , H01L29/0878 , H01L29/1608 , H01L29/66068
摘要： A method of manufacturing a semiconductor device is disclosed that includes the treating the surface of a SiC semiconductor substrate prior to forming a gate oxide film on the SiC semiconductor substrate in order to etch the SiC semiconductor substrate by several nm to 0.1 μm with hydrogen in a reaction furnace. The treating is conducted a reduced pressure in the furnace, at a temperature of 1500° C. or higher. The manufacturing method facilitates the removal of particles and oxide residues remaining on the trench inner wall after trench etching in the manufacturing process for manufacturing a SiC semiconductor device having a fine trench-type MOS gate structure.
摘要翻译： 公开了一种制造半导体器件的方法，其包括在SiC半导体衬底上形成栅极氧化膜之前处理SiC半导体衬底的表面，以便将SiC半导体衬底在 反应炉。 在1500℃以上的温度下，在炉内进行减压处理。 在制造具有细沟槽型MOS栅极结构的SiC半导体器件的制造工艺的制造工艺中，制造方法有助于在沟槽蚀刻后残留在沟槽内壁上的颗粒和氧化物残余物的去除。
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公开(公告)号：US20060252243A1
公开(公告)日：2006-11-09
申请号：US11398659
申请日：2006-04-06
CPC分类号： H01L21/02378 , C30B25/12 , C30B25/14 , H01L21/02529 , H01L21/0262
摘要： An epitaxial film deposition system includes a reactor, a susceptor, a wafer heating unit, a reactant gas supply orifice, and an aperture for venting the reactant gas. The reactant gas is supplied to a reactor region between the susceptor and a graphite plate so as to circulate in layered flow in a direction along the reactor inner wall in the planar direction of a mounted SiC wafer. The temperature of the wafer is controlled by a high frequency coil and halogen lamps based on temperatures detected by a pyrometer. By circulating the reactant gas over the surface of the stationary wafer, it is possible to form, under various process conditions, an SiC epitaxial film having good film quality and good uniformity of film thickness, without providing any wafer rotation mechanism.
摘要翻译： 外延膜沉积系统包括反应器，基座，晶片加热单元，反应气体供应孔和用于排出反应气体的孔。 将反应气体供给到基座和石墨板之间的反应器区域，以便在安装的SiC晶片的平面方向上沿着反应器内壁的方向以分层流动循环。 基于由高温计检测的温度，由高频线圈和卤素灯控制晶片的温度。 通过将反应气体循环在固定晶片的表面上，可以在各种工艺条件下形成具有良好的膜质量和良好的膜厚均匀性的SiC外延膜，而不需要提供任何晶片旋转机构。
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3.发明授权公开(公告)号：US08324631B2
公开(公告)日：2012-12-04
申请号：US11865851
申请日：2007-10-02
申请人： Yoshiyuki Yonezawa , Takeshi Tawara
发明人： Yoshiyuki Yonezawa , Takeshi Tawara
CPC分类号： H01L21/02579 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/02576 , H01L21/0262 , H01L29/66068
摘要： A SiC semiconductor substrate is disclosed which includes a SiC single crystal substrate, a nitrogen (N)-doped n-type SiC epitaxial layer in which nitrogen (N) is doped and a phosphorus (P)-doped n-type SiC epitaxial layer in which phosphorus (P) is doped. The nitrogen (N)-doped n-type SiC epitaxial layer and the phosphorus (P)-doped n-type SiC epitaxial layer are laminated on the silicon carbide single crystal substrate sequentially. The nitrogen (N)-doped n-type SiC epitaxial layer and the phosphorus (P)-doped n-type SiC epitaxial layer are formed by using two or more different dopants, for example, nitrogen and phosphorus, at the time of epitaxial growth. Basal plane dislocations in a SiC device can be reduced.
摘要翻译： 公开了一种SiC半导体衬底，其包括SiC单晶衬底，氮（N）掺杂的n型SiC外延层，其中掺杂氮（N）和磷（P）掺杂的n型SiC外延层， 掺杂了磷（P）。 氮（N）掺杂的n型SiC外延层和磷（P）掺杂的n型SiC外延层依次层压在碳化硅单晶衬底上。 氮（N）掺杂的n型SiC外延层和磷（P）掺杂的n型SiC外延层通过在外延生长时使用两种或更多种不同的掺杂剂，例如氮和磷形成 。 可以减少SiC器件中的基面位错。
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公开(公告)号：US08124510B2
公开(公告)日：2012-02-28
申请号：US12767899
申请日：2010-04-27
申请人： Yasuyuki Kawada , Takeshi Tawara
发明人： Yasuyuki Kawada , Takeshi Tawara
IPC分类号： H01L21/265
CPC分类号： H01L29/1608 , H01L21/302 , H01L21/3065 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/324 , H01L21/3247
摘要： A method of manufacturing a silicon carbide semiconductor device is disclosed in which a trench and a hole are controlled to have a predetermined configuration even if the silicon carbide semiconductor device is subjected to a heat treatment at a temperature of not lower than 1,500° C. A heat treatment step(s) of a method of the invention includes a step of heat treatment in an argon atmosphere at a temperature in a range of 1,600° C. to 1,800° C. under a pressure of at most 10 Torr for a time duration in a range of 0.1 min to 10 min to evaporate silicon atoms from a surface of the silicon carbide semiconductor substrate or the silicon carbide epitaxial layer and to obtain a silicon carbide surface with a carbon atom concentration of at least 95%. The method can further comprise a step of ion implantation of nitrogen ions or phosphorus ions in a dose amount of 8×1014 cm−2 into a surface of the silicon carbide semiconductor substrate or into the silicon carbide epitaxial layer, followed by the step of heat treatment at a temperature of 1,500° C. or higher. The method can comprise a step of heat treatment in an atmosphere of argon gas at a temperature in a range of 1,600° C. to 1,800° C. containing monosilane in an amount of at least 0.2%.
摘要翻译： 公开了一种制造碳化硅半导体器件的方法，其中即使在不低于1500℃的温度下对碳化硅半导体器件进行热处理，也将沟槽和孔控制为具有预定构造。 本发明方法的热处理步骤包括在氩气气氛中在1600℃至1800℃的温度下在至多10托的压力下热处理一段时间 在0.1〜10分钟的范围内，从碳化硅半导体基板或碳化硅外延层的表面蒸发硅原子，得到碳原子浓度为95％以上的碳化硅表面。 该方法还可以包括以8×10 14 cm -2的剂量离子注入到碳化硅半导体衬底或碳化硅外延层的表面中的氮离子或磷离子的离子注入步骤，随后加热 在1500℃以上的温度下进行处理。 该方法可以包括在含有至少0.2％量的含有甲硅烷的1600℃-1,800℃范围内的氩气气氛中进行热处理的步骤。
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5.发明申请公开(公告)号：US20100187543A1
公开(公告)日：2010-07-29
申请号：US12628819
申请日：2009-12-01
申请人： Yasuyuki Kawada , Takeshi Tawara
发明人： Yasuyuki Kawada , Takeshi Tawara
IPC分类号： H01L29/24 , H01L21/306
CPC分类号： H01L29/66068 , H01L21/302 , H01L21/3065 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L29/045 , H01L29/1608 , H01L29/4238 , H01L29/7397 , H01L29/7813
摘要： Silicon carbide semiconductor device includes trench, in which connecting trench section is connected to straight trench section. Straight trench section includes first straight trench and second straight trench extending in parallel to each other. Connecting trench section includes first connecting trench perpendicular to straight trench section, second connecting trench that connects first straight trench and first connecting trench to each other, and third connecting trench that connects second straight trench and first connecting trench to each other. Second connecting trench extends at 30 degrees of angle with the extension of first straight trench. Third connecting trench extends at 30 degrees of angle with the extension of second straight trench. A manufacturing method according to the invention for manufacturing a silicon carbide semiconductor device facilitates preventing defects from being causes in a silicon carbide semiconductor device during the manufacture thereof.
摘要翻译： 碳化硅半导体器件包括沟槽，其中连接沟槽部分连接到直槽部分。 直槽部分包括彼此平行延伸的第一直槽和第二直槽。 连接沟槽部分包括垂直于直槽部分的第一连接沟槽，将第一直沟槽和第一连接沟槽彼此连接的第二连接沟槽，以及将第二直沟槽和第一连接沟槽彼此连接的第三连接沟槽。 第二连接沟槽与第一直槽延伸成30度角。 第三连接沟槽与第二直槽的延伸部成30度角延伸。 根据本发明的用于制造碳化硅半导体器件的制造方法有助于防止在其制造期间在碳化硅半导体器件中引起缺陷。
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6.发明授权Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device 有权碳化硅半导体元件及其制造方法以及碳化硅器件公开(公告)号：US09117681B2
公开(公告)日：2015-08-25
申请号：US13346864
申请日：2012-01-10
CPC分类号： H01L21/0485 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.
摘要翻译： 公开了一种碳化硅半导体元件及其制造方法，其中在电极膜和布线导体元件之间获得低接触电阻，并且布线导体元件几乎不与电极膜分离。 在该方法中，将镍膜和氧化镍膜依次层叠在碳化硅基板的n型碳化硅基板或n型碳化硅区域的表面上，然后在非碳化硅基板 氧化条件。 热处理将镍膜的一部分转变成硅化镍膜。 然后，用盐酸溶液除去氧化镍膜，然后依次将镍铝膜和铝膜层叠在硅化镍膜的表面上。
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7.发明授权公开(公告)号：US08648353B2
公开(公告)日：2014-02-11
申请号：US13532042
申请日：2012-06-25
申请人： Yasuyuki Kawada , Takeshi Tawara
发明人： Yasuyuki Kawada , Takeshi Tawara
IPC分类号： H01L21/02
CPC分类号： H01L29/66068 , H01L21/302 , H01L21/3065 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L29/045 , H01L29/1608 , H01L29/4238 , H01L29/7397 , H01L29/7813
摘要： Silicon carbide semiconductor device includes trench, in which connecting trench section is connected to straight trench section. Straight trench section includes first straight trench and second straight trench extending in parallel to each other. Connecting trench section includes first connecting trench perpendicular to straight trench section, second connecting trench that connects first straight trench and first connecting trench to each other, and third connecting trench that connects second straight trench and first connecting trench to each other. Second connecting trench extends at 30 degrees of angle with the extension of first straight trench. Third connecting trench extends at 30 degrees of angle with the extension of second straight trench. A manufacturing method according to the invention for manufacturing a silicon carbide semiconductor device facilitates preventing defects from being causes in a silicon carbide semiconductor device during the manufacture thereof.
摘要翻译： 碳化硅半导体器件包括沟槽，其中连接沟槽部分连接到直槽部分。 直槽部分包括彼此平行延伸的第一直槽和第二直槽。 连接沟槽部分包括垂直于直槽部分的第一连接沟槽，将第一直沟槽和第一连接沟槽彼此连接的第二连接沟槽，以及将第二直沟槽和第一连接沟槽彼此连接的第三连接沟槽。 第二连接沟槽与第一直槽延伸成30度角。 第三连接沟槽与第二直槽的延伸部成30度角延伸。 根据本发明的用于制造碳化硅半导体器件的制造方法有助于防止在其制造期间在碳化硅半导体器件中引起缺陷。
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8.发明授权公开(公告)号：US08232184B2
公开(公告)日：2012-07-31
申请号：US12628819
申请日：2009-12-01
申请人： Yasuyuki Kawada , Takeshi Tawara
发明人： Yasuyuki Kawada , Takeshi Tawara
IPC分类号： H01L21/02
CPC分类号： H01L29/66068 , H01L21/302 , H01L21/3065 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L29/045 , H01L29/1608 , H01L29/4238 , H01L29/7397 , H01L29/7813
摘要： Silicon carbide semiconductor device includes trench, in which connecting trench section is connected to straight trench section. Straight trench section includes first straight trench and second straight trench extending in parallel to each other. Connecting trench section includes first connecting trench perpendicular to straight trench section, second connecting trench that connects first straight trench and first connecting trench to each other, and third connecting trench that connects second straight trench and first connecting trench to each other. Second connecting trench extends at 30 degrees of angle with the extension of first straight trench. Third connecting trench extends at 30 degrees of angle with the extension of second straight trench. A manufacturing method according to the invention for manufacturing a silicon carbide semiconductor device facilitates preventing defects from being causes in a silicon carbide semiconductor device during the manufacture thereof.
摘要翻译： 碳化硅半导体器件包括沟槽，其中连接沟槽部分连接到直槽部分。 直槽部分包括彼此平行延伸的第一直槽和第二直槽。 连接沟槽部分包括垂直于直槽部分的第一连接沟槽，将第一直沟槽和第一连接沟槽彼此连接的第二连接沟槽，以及将第二直沟槽和第一连接沟槽彼此连接的第三连接沟槽。 第二连接沟槽与第一直槽延伸成30度角。 第三连接沟槽与第二直槽的延伸部成30度角延伸。 根据本发明的用于制造碳化硅半导体器件的制造方法有助于防止在其制造期间在碳化硅半导体器件中引起缺陷。
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9.发明授权Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device 有权碳化硅半导体元件及其制造方法以及碳化硅器件公开(公告)号：US08114783B2
公开(公告)日：2012-02-14
申请号：US12193291
申请日：2008-08-18
IPC分类号： H01L31/0312
CPC分类号： H01L21/0485 , H01L29/1608 , H01L29/66068
摘要： A silicon carbide semiconductor element and a manufacturing method thereof are disclosed in which a low contact resistance is attained between an electrode film and a wiring conductor element, and the wiring conductor element is hardly detached from the electrode film. In the method, a nickel film and a nickel oxide film are laminated in this order on a surface of an n-type silicon carbide substrate or an n-type silicon carbide region of a silicon carbide substrate, followed by a heat treatment under a non-oxidizing condition. The heat treatment transforms a portion of the nickel film into a nickel silicide film. Then, the nickel oxide film is removed with hydrochloric acid solution, and subsequently, a nickel aluminum film and an aluminum film are laminated in this order on a surface of the nickel silicide film.
摘要翻译： 公开了一种碳化硅半导体元件及其制造方法，其中在电极膜和布线导体元件之间获得低接触电阻，并且布线导体元件几乎不与电极膜分离。 在该方法中，将镍膜和氧化镍膜依次层叠在碳化硅基板的n型碳化硅基板或n型碳化硅区域的表面上，然后在非碳化硅基板 氧化条件。 热处理将镍膜的一部分转变成硅化镍膜。 然后，用盐酸溶液除去氧化镍膜，然后依次将镍铝膜和铝膜层叠在硅化镍膜的表面上。
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公开(公告)号：US20080318359A1
公开(公告)日：2008-12-25
申请号：US12139446
申请日：2008-06-13
申请人： Yoshiyuki Yonezawa , Takeshi Tawara
发明人： Yoshiyuki Yonezawa , Takeshi Tawara
IPC分类号： H01L21/205
CPC分类号： H01L21/02529 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/36 , H01L21/02378 , H01L21/0262 , H01L21/02634 , H01L21/02658
摘要： A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which the density of basal plane dislocations (BPDs) in particular is reduced in an SiC crystal substrate. Irregularities in the surface of the substrate due to this reduction also can be flattened. A method of manufacturing a silicon carbide semiconductor substrate is disclosed in which, prior to forming an epitaxial growth layer on a silicon carbide substrate with an off-axis angle of 1° to 8°, parallel line-shape irregularities, which have an irregularity cross-sectional aspect ratio equal to or greater than the tangent of the off-axis angle of the silicon carbide substrate, are formed in the substrate surface. The irregularites have a height between 0.25 μm and 5 μm.
摘要翻译： 公开了一种制造碳化硅半导体衬底的方法，其特征在于在SiC晶体衬底中基底面位错（BPD）的密度降低。 由于这种还原，基板表面的不规则性也可以变平。 公开了一种制造碳化硅半导体衬底的方法，其中在形成具有1°至8°的偏轴角度的碳化硅衬底上的外延生长层之前，具有不规则交叉的平行线形不规则 等于或大于碳化硅衬底的离轴角的切线的截面长宽比形成在衬底表面中。 不规则物的高度在0.25mum和5um之间。
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