公开(公告)号：US20050030614A1

公开(公告)日：2005-02-10

申请号：US10767651

申请日：2004-01-29

Applicant: Simarjeet Saini ,  Peter Heim ,  Scott Merritt ,  Mario Dagenais

Inventor： Simarjeet Saini ,  Peter Heim ,  Scott Merritt ,  Mario Dagenais

IPC: H01S3/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/50

CPC classification number: H01S5/5009 ,  H01S5/2231 ,  H01S5/3211

Abstract: A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes a residual cladding layer having different thicknesses over different portions of the gain section. Over a first portion of the gain section, the residual cladding layer is thinner than over a second portion of the gain section. This results in the first portion providing more gain to optical energy having a TE polarization state than optical energy having a TM polarization state. In the second portion of the gain section, however, more gain is provided to optical energy having a TM polarization state than energy having a TE polarization state. The resulting gain differences can be designed to offset one another so that the output has a gain that is substantially polarization independent.

Abstract translation: 半导体光放大器（SOA）具有基本上偏振无关的总体增益，即横向电（TE）和横向磁（TM）增益之间的差小于1dB。 SOA包括在增益部分的不同部分上具有不同厚度的残余覆层。 在增益部分的第一部分上，残余包层比增益部分的第二部分薄。 这导致第一部分比具有TM偏振状态的光能提供具有TE极化状态的光能的更多增益。 然而，在增益部分的第二部分中，对具有TM极化状态的光能比具有TE极化状态的能量提供更多的增益。 所产生的增益差异可被设计为彼此偏移，使得输出具有基本上与偏振无关的增益。

公开(公告)号：US07190852B2

公开(公告)日：2007-03-13

申请号：US10270370

申请日：2002-10-15

Applicant: Peter J. S. Heim ,  Mario Dagenais ,  Simarjeet Saini

Inventor： Peter J. S. Heim ,  Mario Dagenais ,  Simarjeet Saini

IPC: G01C3/14 ,  G01P3/36 ,  G01J5/48

CPC classification number: G02B6/125 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/14 ,  G02B2006/12097 ,  G02B2006/12119 ,  G02B2006/12121 ,  G02B2006/12195 ,  H01S5/10 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/143 ,  H01S5/50

Abstract: Semiconductor devices having various combinations of curved waveguides and mode transformers are described. According to some exemplary embodiments, the mode transformer itself can be fabricated as all or part of the curved waveguide. For these exemplary embodiments it can be beneficial to use mode transformers whose active regions are relatively small to minimize losses associated with the introduced curvature, e.g., mode transformers that employ resonantly coupled waveguides and a tapered active waveguide in the mode transformation region. According to other exemplary embodiments, the mode transformer can be disposed along a straight portion of the waveguide, e.g., between the curved portion of the waveguide and the back facet. The present invention also provides flexibility in manufacturing by permitting different types of devices to be generated from a wafer depending upon where the devices are cleaved.

Abstract translation: 描述了具有弯曲波导和模式变压器的各种组合的半导体器件。 根据一些示例性实施例，模式变压器本身可以被制造为弯曲波导的全部或部分。 对于这些示例性实施例，使用其有源区域相对较小的模式变压器可以是有益的，以使与引入的曲率相关联的损耗最小化，例如在模式转换区域中使用谐振耦合的波导和锥形有源波导的模式变压器。 根据其他示例性实施例，模式变压器可以沿着波导的直线部分布置，例如在波导的弯曲部分和后面之间。 本发明还通过根据装置被切割的位置从晶片产生不同类型的装置来提供制造灵活性。

公开(公告)号：US06600847B2

公开(公告)日：2003-07-29

申请号：US09985499

申请日：2001-11-05

Applicant: Simarjeet Saini ,  Peter J. S. Heim

Inventor： Simarjeet Saini ,  Peter J. S. Heim

IPC: G02B612

CPC classification number: G02B6/1228 ,  G02B2006/12078 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/22

Abstract: An optical device is provided comprising a gain section adapted to emit radiation at a radiation wavelength, a coupling section adjacent to the gain section for transitioning radiation between an active waveguide and a passive waveguide, and a passive section adjacent to the coupling section supporting a single-lobed optical mode in the passive waveguide at the radiation wavelength. The passive waveguide has an index of refraction and dimension such that the confinement of the radiation within the active waveguide in the gain section is reduced.

Abstract translation: 提供了一种光学装置，其包括适于发射辐射波长的增益部分，与增益部分相邻的耦合部分，用于在有源波导和无源波导之间转换辐射;以及与耦合部分相邻的被动部分，其支撑单个 在无源波导中的放射波长的双光学模式。 无源波导具有折射率和尺寸，使得增益部分中的有源波导内的辐射的限制减小。

公开(公告)号：US20150118124A1

公开(公告)日：2015-04-30

申请号：US14398780

申请日：2013-05-13

Applicant: Mohammadreza Khorasaninejad ,  Jaspreet Walia ,  Simarjeet Saini

Inventor： Mohammadreza Khorasaninejad ,  Jaspreet Walia ,  Simarjeet Saini

IPC: G01N21/25 ,  G01N21/78

CPC classification number: G01N21/251 ,  B82Y15/00 ,  G01N21/78 ,  G01N2201/061

Abstract: A colorimetric sensor including: a substrate; and a periodic array of nanostructures provided to the substrate, wherein the periodic array of nanostructures is configured to provide a change in color based on a medium being within a predetermined distance of the colorimetric sensor. The periodic array of nanostructures may be configured (width, height, spacing) to provide optical wave-guide properties or surface Plasmon resonance in order to effect a distinct change in color based on the medium being sensed. In some cases, the colorimetric may include a reflective surface to reflect light from the sensor. Further, the reflective surface may be metallic.

Abstract translation: 一种比色传感器，包括：基板; 以及提供给衬底的纳米结构的周期性阵列，其中纳米结构的周期性阵列被配置为基于在比色传感器的预定距离内的介质提供颜色变化。 纳米结构的周期性阵列可以被配置（宽度，高度，间隔）以提供光波导特性或表面等离子体共振，以便基于所感测的介质来实现颜色的明显变化。 在一些情况下，比色可以包括反射表面以反射来自传感器的光。 此外，反射表面可以是金属的。

公开(公告)号：US20060268397A1

公开(公告)日：2006-11-30

申请号：US11346526

申请日：2006-02-02

Applicant: Simarjeet Saini ,  Jerry Bowser ,  Vincent Luciani ,  Peter Heim ,  Mario Dagenais

Inventor： Simarjeet Saini ,  Jerry Bowser ,  Vincent Luciani ,  Peter Heim ,  Mario Dagenais

IPC: H01S3/00

CPC classification number: H01S5/0425 ,  H01S5/22 ,  H01S5/50 ,  H01S2301/04

Abstract: A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device.

Abstract translation: 描述了一种具有高效电流注入的半导体光放大器（SOA）。 注入电流密度在一些区域被控制得更高，而另一些区域的注入电流密度更低，以提供例如改善的饱和功率和/或噪声系数。 控制注入电流可以通过改变电流注入电极的电阻率来实现。 这又可以通过以沿设备长度改变串联电阻的方式在电流注入金属化之上的电介质层中图案化开口来实现。

公开(公告)号：US07126749B2

公开(公告)日：2006-10-24

申请号：US10323630

申请日：2002-12-20

Applicant: Peter J. S. Heim ,  Mario Dagenais ,  Simarjeet Saini ,  Xun Li

Inventor： Peter J. S. Heim ,  Mario Dagenais ,  Simarjeet Saini ,  Xun Li

IPC: H01S3/00

CPC classification number: H01S5/5018 ,  H01S5/1014 ,  H01S5/125

Abstract: A semiconductor optical amplifier (SOA) has an overall gain that is substantially polarization independent, i.e., less than 1 dB difference between transverse electric (TE) and transverse magnetic (TM) gain. The SOA includes gain and polarization rotation functions integrated onto a single substrate. According to one exemplary embodiment, a passive polarization rotation section is disposed between two active gain sections.

Abstract translation: 半导体光放大器（SOA）具有基本上偏振无关的总体增益，即横向电（TE）与横向磁（TM）增益之间的差小于1dB。 SOA包括集成到单个基板上的增益和偏振旋转函数。 根据一个示例性实施例，无源偏振旋转部分设置在两个主动增益部分之间。