公开(公告)号：US4142198A

公开(公告)日：1979-02-27

申请号：US702548

申请日：1976-07-06

申请人： Ronald M. Finnila ,  Stephen C. Su

发明人： Ronald M. Finnila ,  Stephen C. Su

IPC分类号： H01L27/148 ,  H01L29/78 ,  G11C19/28 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14875 ,  Y10S148/08

摘要： There is disclosed an all silicon monolithic focal plane array of infrared detectors for image detection. The structure comprises an epitaxial layer grown on an extrinsically doped silicon substrate. The detectors are formed in and extend through the substrate, the material of which is sensitive to specific wavelength infrared signals according to the dopant used in the substrate. The collection of charges takes place on a buried layer formed around a portion of the epitaxial layer-substrate interface, and the charges are then transferred through a surface layer of the same conductivity type to the surface of the epitaxial layer. The signal readout function is performed by a charge coupled device shift register constructed in the epitaxial layer by providing selectively spaced electrodes in an insulating layer. Carriers generated in the detector by incident infrared radiation are collected into the buried layer and then pass through the surface layer, are injected therefrom into the CCD shift register and are detected at the output. The monolithic construction and the use of an epitaxial layer to form the CCD shift register result in high yield and high efficiency devices. The planar surface of the device improves the aluminum step coverage for a more reliable device, and the use of the buried layer improves the fill factor of the detector.

摘要翻译： 公开了用于图像检测的全硅单片焦平面阵列红外探测器。 该结构包括在外掺硅衬底上生长的外延层。 检测器形成并延伸穿过衬底，根据衬底中使用的掺杂剂，其材料对特定波长的红外信号敏感。 电荷的收集发生在围绕外延层 - 衬底界面的一部分形成的掩埋层上，然后电荷通过相同导电类型的表面层转移到外延层的表面。 通过在绝缘层中提供选择性间隔的电极，通过在外延层中构造的电荷耦合器件移位寄存器来执行信号读出功能。 通过入射红外辐射在检测器中产生的载体被收集到掩埋层中，然后通过表面层，从其中注入到CCD移位寄存器中，并在输出端检测。 单片结构和使用外延层形成CCD移位寄存器导致高产量和高效率器件。 器件的平面可以提高铝合金台阶的覆盖范围，使其更可靠，并且掩埋层的使用提高了检测器的填充系数。

公开(公告)号：US4313127A

公开(公告)日：1982-01-26

申请号：US127678

申请日：1980-03-06

申请人： Stephen C. Su ,  Ronald M. Finnila

发明人： Stephen C. Su ,  Ronald M. Finnila

IPC分类号： H01L27/148 ,  H01L27/14

CPC分类号： H01L27/14875

摘要： A method and apparatus for improving the operation of infrared detectors of a type generally characterized by a semiconductive substrate of a first conductivity type which includes a detection region defined or bounded by a heavily doped backside electrode and buried layer of the first conductivity type. A charge coupled device (CCD) readout structure for transfers charge in an epitaxial layer of second conductivity type which overlies the substrate, and the detector further includes a heavily doped layer of the second conductivity type positioned between the epitaxial layer and the substrate to shield the charge carriers of the substrate from the CCD voltages. Means are provided by the present invention for the injection of minority charge carriers into the epitaxial region which are subsequently transferred to output means by the CCD. The substrate is biased so that a portion of the flow of minority carriers in the epitaxial layer will be diverted toward the backside electrode when the detection region is raised to conduction by the incidence of photon energy so that a subtractive indication of the radiation is obtained while harmful double injection and attendant substrate breakdown are avoided.

摘要翻译： 一种用于改进红外检测器的操作的方法和装置，其通常以第一导电类型的半导体衬底为特征，其包括由重掺杂的背面电极和第一导电类型的掩埋层限定或界定的检测区域。 一种电荷耦合器件（CCD）读出结构，用于在覆盖衬底的第二导电类型的外延层中传送电荷，并且检测器还包括位于外延层和衬底之间的第二导电类型的重掺杂层，以屏蔽 基板的电荷载体由CCD电压。 本发明提供了用于将少数电荷载流子注入到外延区域中的手段，其随后由CCD转移到输出装置。 衬底被偏置，使得当通过光子能量的入射使检测区域升高到导通时，外延层中的少数载流子流的一部分将被转向背侧电极，从而获得辐射的减法指示，同时 避免了有害的双重注入和伴随的衬底击穿。

公开(公告)号：US4190851A

公开(公告)日：1980-02-26

申请号：US614277

申请日：1975-09-17

申请人： Ronald M. Finnila ,  Stephen C. Su

发明人： Ronald M. Finnila ,  Stephen C. Su

IPC分类号： H01L27/148 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14875

摘要： There is disclosed an all silicon monolithic focal plane array of infrared detectors for image detection. The structure comprises an epitaxial layer grown from an extrinsicly doped silicon substrate. The detectors are formed in and extend through the substrate the material of which is sensitive to specific wavelength infrared signals according to the dopant used in the substrate. The signal readout function is performed by a charge coupled device shift register constructed in the epitaxial layer by separating electrodes from it in an insulating layer formed on it. Carriers generated in the detecor by incident infrared radiation are directly injected into the CCD shift register and detected at the output end. The monolithic construction and the use of an epitaxial layer to form the CCD shift register results in low cost, high yield and high efficiency devices.

摘要翻译： 公开了用于图像检测的全硅单片焦平面阵列红外探测器。 该结构包括从外源掺杂的硅衬底生长的外延层。 根据衬底中使用的掺杂剂，检测器形成并延伸通过衬底，其材料对特定波长的红外信号敏感。 信号读出功能由在外延层中构成的电荷耦合器件移位寄存器通过在其上形成的绝缘层中从其分离电极来执行。 通过入射红外辐射在探测器中产生的载体直接注入CCD移位寄存器，并在输出端检测。 单片结构和使用外延层形成CCD移位寄存器导致低成本，高产量和高效率器件。

公开(公告)号：US4197553A

公开(公告)日：1980-04-08

申请号：US720865

申请日：1976-09-07

申请人： Ronald M. Finnila ,  Stephen C. Su

发明人： Ronald M. Finnila ,  Stephen C. Su

IPC分类号： H01L27/148 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14875

摘要： There is disclosed an all silicon monolithic focal plane array of infrared detectors for image detection. The structure comprises two epitaxial layers grown on an extrinsically doped silicon substrate. The detectors are formed in and extend through the substrate, the material of which is sensitive to specific wavelength infrared signals according to the dopant used in the substrate. The collection of charges takes place on a first buried layer formed around a portion of the first epitaxial layer-substrate interface, and the charges are then transferred through a second buried layer of the same conductivity type to a conducting surface layer on the upper portion of the second epitaxial layer. The signal readout function is performed by a charge coupled device shift register constructed in the second epitaxial layer by providing selectively spaced electrodes in an insulating layer. Carriers generated in the detector by incident infrared radiation are collected into the first buried layer and then pass through the second buried layer to the surface layer and they are injected therefrom into the CCD shift register and are detected at the output. The monolithic construction and the use of an epitaxial layer to form the CCD shift register result in high yield and high efficiency devices. The use of two epitaxial layers in the device improves its responsivity, its fill factor and better isolates the operation of its CCD circuits from its detector elements.

摘要翻译： 公开了用于图像检测的全硅单片焦平面阵列红外探测器。 该结构包括在外掺硅衬底上生长的两个外延层。 检测器形成并延伸穿过衬底，根据衬底中使用的掺杂剂，其材料对特定波长的红外信号敏感。 电荷收集发生在围绕第一外延层 - 衬底界面的一部分形成的第一掩埋层上，然后电荷通过相同导电类型的第二掩埋层转移到导电表面层的上部 第二外延层。 通过在绝缘层中提供选择性间隔开的电极，通过在第二外延层中构造的电荷耦合器件移位寄存器来执行信号读出功能。 通过入射红外辐射在检测器中产生的载体被收集到第一掩埋层中，然后穿过第二掩埋层到表面层，并将它们从其中注入到CCD移位寄存器中，并在输出端检测。 单片结构和使用外延层形成CCD移位寄存器导致高产量和高效率器件。 在器件中使用两个外延层可提高其响应度及其填充因子，并更好地将其CCD电路与其检测器元件的操作隔离开来。

公开(公告)号：US4099317A

公开(公告)日：1978-07-11

申请号：US683361

申请日：1976-05-05

申请人： Stephen C. Su

发明人： Stephen C. Su

IPC分类号： H01L21/033 ,  H01L21/339 ,  H01L21/8234 ,  H01L29/768 ,  B01J17/00

CPC分类号： H01L29/66954 ,  H01L21/033 ,  H01L21/823406 ,  H01L29/76875

摘要： The specification describes a self-aligning masking technique for the fabrication of charge coupled device-metal oxide semiconductor (CCD/MOS) transistor combinations. Both the CCD devices and the output MOS transistors are formed on the same semiconductor substrate during the same processing steps. Two layers of polycrystalline silicon, isolated from each other by a layer of dielectric material and isolated from the semiconductor substrate by another dielectric layer are used to form two sets of partially overlapping semiconductor strips. These strips and predetermined portions of the substrate are then doped, with a conductivity determining impurity opposite the conductivity type of the substrate. This process produces two self-aligned sets of gate electrodes for a two-phase or a four-phase CCD device and also produces two output self-aligned gate field effect transistors at the end of the CCD array.

摘要翻译： 本说明书描述了用于制造电荷耦合器件 - 金属氧化物半导体（CCD / MOS）晶体管组合的自对准掩蔽技术。 在相同的处理步骤期间，CCD器件和输出MOS晶体管都形成在相同的半导体衬底上。 使用通过介电材料层彼此隔离并通过另一个介电层与半导体衬底隔离的两层多晶硅来形成两组部分重叠的半导体条。 然后将这些条和衬底的预定部分掺杂，其中电导率确定杂质与衬底的导电类型相反。 该过程为两相或四相CCD器件产生两个自对准的栅电极组，并且还在CCD阵列的末端产生两个输出自对准栅场效应晶体管。

公开(公告)号：US3969634A

公开(公告)日：1976-07-13

申请号：US601124

申请日：1975-07-31

申请人： Stephen C. Su ,  Ronald M. Finnila

发明人： Stephen C. Su ,  Ronald M. Finnila

IPC分类号： G11C19/28 ,  H01L27/148 ,  H01L29/768 ,  H04N5/357 ,  H04N5/372 ,  H01L29/78

CPC分类号： H01L27/14881 ,  G11C19/285 ,  H01L27/14856 ,  H01L29/76808 ,  H04N3/1568

摘要： There is disclosed a circuit for removing the DC or background representing charge component of a signal to be passed through a charge coupled device shift register without degrading the information carried by the AC component of the signal. Such a circuit may, for example, be used to remove the constant background illumination component of the input from a semiconductor imaging device to increase the contrast ratio of the image signal. The circuit comprises two electrode defined potential wells or buckets formed in a semiconductor substrate with a control gate between them and a transfer gate which controls the flow of the charges in the first bucket to a P-N junction. Like the well defining electrodes, the control gate and transfer gate are electrodes separated from the semiconductor substrate by an insulation layer. The transfer gate functions as a channel switch to control the flow of the background charges from the first bucket through the P-N junction to an external drain in discrete quantized increments under the control of an appropriate clock voltage on the transfer electrode. This subtraction of the DC component from the signal passing through the shift register results in a reduction in the size of the storage electrodes required to transmit a given quantity of signal charge through the shift register for fixed clock voltages and thereby makes more economical use of the chip area.

摘要翻译： 公开了一种用于去除表示要通过电荷耦合器件移位寄存器的信号的电荷分量的DC或背景的电路，而不会降低由信号的AC分量携带的信息。 这样的电路可以例如用于从半导体成像装置中去除输入的恒定背景照明分量，以增加图像信号的对比度。 该电路包括形成在半导体衬底中的两个电极限定的势阱或桶，其间具有控制栅极和控制第一桶中的电荷流到P-N结的传输门。 与阱定义电极一样，控制栅极和转移栅极是通过绝缘层与半导体衬底分离的电极。 传输门用作通道开关，以在转移电极上的适当的时钟电压的控制下以离散的量化增量来控制背景电荷从第一个桶通过P-N结到外部漏极的流动。 从通过移位寄存器的信号中减去DC分量导致通过用于固定时钟电压的移位寄存器传输给定量的信号电荷所需的存储电极的尺寸减小，从而更经济地使用 芯片面积。