公开(公告)号：US4314874A

公开(公告)日：1982-02-09

申请号：US190286

申请日：1980-09-24

申请人： Haruhiko Abe ,  Yoji Mashiko ,  Hiroshi Harada ,  Sotoju Asai ,  Kazuo Mizuguchi ,  Sumio Nomoto

发明人： Haruhiko Abe ,  Yoji Mashiko ,  Hiroshi Harada ,  Sotoju Asai ,  Kazuo Mizuguchi ,  Sumio Nomoto

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/3215 ,  C23F1/02

CPC分类号： H01L21/31683 ,  C23F4/00 ,  H01L21/32136 ,  H01L21/3215

摘要： A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.

摘要翻译： 在基板2的顶表面上形成薄的铝膜3.铝膜的一些区域被氧离子束6照射以形成注入区域7.然后等离子体蚀刻该表面，并将氧离子注入 作为掩模的区域，从而防止去除铝膜的下面的区域。

公开(公告)号：US4377734A

公开(公告)日：1983-03-22

申请号：US195380

申请日：1980-10-09

申请人： Yoji Mashiko ,  Hirozo Takano ,  Haruhiko Abe ,  Sotoju Asai ,  Kazuo Mizuguchi ,  Sumio Nomoto

发明人： Yoji Mashiko ,  Hirozo Takano ,  Haruhiko Abe ,  Sotoju Asai ,  Kazuo Mizuguchi ,  Sumio Nomoto

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/3213 ,  H01L21/3215 ,  B23K9/00

CPC分类号： H01L21/3215 ,  H01L21/302 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31155 ,  H01L21/32136 ,  H01L21/32137

摘要： Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.

摘要翻译： 在等离子体蚀刻的氧气存在下变为无源的金属的离子注入到工件的表面的选定部分中，之后用与氧混合的反应气体进行等离子体蚀刻，由此将该层 已被赋予被动作为掩模，并且形成蚀刻图案。