摘要:
The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
摘要:
A dynamic load lock chamber that includes a plurality of actuators positioned along its length to achieve a desired pressure gradient from an atmospheric pressure side to a processing pressure side of the chamber is provided. The chamber includes a transport belt continuously running through the chamber to transport substrates from the atmospheric pressure side to the processing pressure side of the chamber, if situated on an inlet side of a production line, and from the processing pressure side to the atmospheric pressure side of the chamber, if positioned on an outlet side of the production line. Separation mechanisms may be attached to the belt to separate discrete regions within the chamber into a plurality of discrete volumes. Substrates may be disposed between the separation mechanisms, such that separation between adjacent pressure regions within the chamber is maintained as the substrates are transported through the chamber.
摘要:
An arrangement for moving a carrier within a vacuum chamber is described. This carrier is formed in the shape of a plate and is supported with its narrow-side lower edge on rollers driven by a drive system. As a drive system uses a magnetic coupling which is disposed partially within the vacuum chamber and partially outside of the vacuum chamber. With the aid of a force acting in the vertical direction the two components of the magnetic coupling can be displaced relative to one another. In addition, horizontal displacement of the carrier is also possible.