-
公开(公告)号：US20130199891A1
公开(公告)日：2013-08-08
申请号：US13748271
申请日：2013-01-23
IPC分类号： H01L21/677
CPC分类号： H01L21/67739 , H01L21/67201
摘要： A dynamic load lock chamber that includes a plurality of actuators positioned along its length to achieve a desired pressure gradient from an atmospheric pressure side to a processing pressure side of the chamber is provided. The chamber includes a transport belt continuously running through the chamber to transport substrates from the atmospheric pressure side to the processing pressure side of the chamber, if situated on an inlet side of a production line, and from the processing pressure side to the atmospheric pressure side of the chamber, if positioned on an outlet side of the production line. Separation mechanisms may be attached to the belt to separate discrete regions within the chamber into a plurality of discrete volumes. Substrates may be disposed between the separation mechanisms, such that separation between adjacent pressure regions within the chamber is maintained as the substrates are transported through the chamber.
摘要翻译： 提供一种动态负载锁定室，其包括沿其长度定位的多个致动器，以实现从室的大气压侧到处理压力侧的期望的压力梯度。 所述腔室包括连续运行通过所述腔室的输送带，以将衬底从所述大气压侧输送到所述腔室的处理压力侧，如果位于生产线的入口侧，以及从处理压力侧到大气压侧 如果位于生产线的出口侧。 分离机构可以附接到带上以将腔室内的离散区域分离成多个离散体积。 衬底可以设置在分离机构之间，使得当衬底被输送通过腔室时，保持室内的相邻压力区域之间的间隔。
-
公开(公告)号：US20190006216A1
公开(公告)日：2019-01-03
申请号：US16062596
申请日：2016-01-18
发明人： Simon LAU , Wolfgang BUSCHBECK
IPC分类号： H01L21/677 , C23C14/35 , C23C14/50 , C23C14/56
摘要： An apparatus for transportation of a substrate carrier in a vacuum chamber is provided. The apparatus includes a first track providing a first transportation path for the substrate carrier, and a transfer device configured for contactlessly moving the substrate carrier from a first position on the first track to one or more second positions away from the first track. The one or more second positions include at least one of a position on a second track and a process position for processing of a substrate. The transfer device includes at least one first magnet device configured to provide a magnetic force acting on the substrate carrier to contactlessly move the substrate carrier from the first position to the one or more second positions.
-
公开(公告)号：US20200165721A1
公开(公告)日：2020-05-28
申请号：US16075914
申请日：2016-02-12
申请人： Neil MORRISON , Jürgen HENRICH , Florian RIES , Tobias STOLLEY , Andreas SAUER , Wolfgang BUSCHBECK , Applied Materials, Inc.
发明人： Neil MORRISON , Jürgen HENRICH , Florian RIES , Tobias STOLLEY , Andreas SAUER , Wolfgang BUSCHBECK
IPC分类号： C23C14/56 , C23C16/54 , B65G39/18 , B05C9/14 , B05C1/08 , C23C16/458 , C23C16/511
摘要： A vacuum processing system for a flexible substrate is provided. The vacuum processing system includes a first chamber adapted for housing a supply roll for providing the flexible substrate; a second chamber adapted for housing a take-up roll for storing the flexible substrate after processing; a substrate transport arrangement including one or more guide rollers for guiding the flexible substrate from the first chamber to the second chamber; a maintenance zone between the first chamber and the second chamber wherein the maintenance zone allows for maintenance access to or of at least one of the first chamber and the second chamber; and a first process chamber for processing the flexible substrate.
-
4.发明申请公开(公告)号：US20140212600A1
公开(公告)日：2014-07-31
申请号：US13871899
申请日：2013-04-26
申请人： Morrison NEIL , Jose Manuel DIEGUEZ-CAMPO , Heike LANDGRAF , Tobias STOLLEY , Stefan HEIN , Florian RIES , Wolfgang BUSCHBECK
发明人： Morrison NEIL , Jose Manuel DIEGUEZ-CAMPO , Heike LANDGRAF , Tobias STOLLEY , Stefan HEIN , Florian RIES , Wolfgang BUSCHBECK
CPC分类号： C23C16/545 , C23C16/45517 , C23C16/45519 , C23C16/50 , H01J37/32449 , H01J37/32513 , H01J37/32568 , H01J37/32752 , H01J37/32761 , H01J37/3277
摘要： An apparatus includes a substrate support having an outer surface for guiding the substrate through a first vacuum processing region and at least one second vacuum processing region. First and second deposition sources correspond to the first processing region and at least one second deposition source corresponds to the at least one second vacuum processing region, wherein at least the first deposition source includes an electrode having a surface that opposes the substrate support. A processing gas inlet and a processing gas outlet are arranged at opposing sides of the surface of the electrode. At least one separation gas inlet how one or more openings, wherein the one or more openings are at least provided at one of opposing sides of the electrode surface such that the processing gas inlet and/or the processing gas outlet are provided between the one or more openings and the surface of the electrode.
摘要翻译： 一种设备包括具有用于引导基板通过第一真空处理区域和至少一个第二真空处理区域的外表面的基板支撑件。 第一和第二沉积源对应于第一处理区域，并且至少一个第二沉积源对应于至少一个第二真空处理区域，其中至少第一沉积源包括具有与基板支撑件相对的表面的电极。 处理气体入口和处理气体出口布置在电极表面的相对侧。 至少一个分离气体入口如何一个或多个开口，其中所述一个或多个开口至少设置在电极表面的相对侧中的一个处，使得处理气体入口和/或处理气体出口设置在该一个或多个开口之间， 更多的开口和电极的表面。
-
5.发明申请公开(公告)号：US20120097093A1
公开(公告)日：2012-04-26
申请号：US12912272
申请日：2010-10-26
CPC分类号： H01L21/67201 , Y10T137/0379
摘要： A lock chamber for a substrate processing system is provided which includes at least a first conduit adapted to provide an inner portion of the lock chamber in fluid communication with atmospheric pressure or overpressure. Additionally, the lock chamber includes at least a first control valve for controlling a flow rate of the fluid communication of the inner portion of the chamber with the atmospheric pressure or the overpressure, wherein the control valve is adapted to continuously control the flow rate. Furthermore, an according method, a computer program and a computer readable medium adapted for performing the method is provided.
摘要翻译： 提供了一种用于基板处理系统的锁定室，其包括至少第一导管，其适于提供与大气压力或超压力流体连通的锁定室的内部。 此外，锁定室至少包括第一控制阀，用于控制室内部与大气压或超压力的流体连通的流量，其中控制阀适于连续地控制流量。 此外，提供了一种适用于执行该方法的依据方法，计算机程序和计算机可读介质。
-
公开(公告)号：US20110120862A1
公开(公告)日：2011-05-26
申请号：US12627159
申请日：2009-11-30
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , H01J37/32541 , H01J37/3405
摘要： The present disclosure relates to an anode rod for a sputtering system comprising a target, a lateral surface area of the anode rod is at least 2 times greater than the lateral surface area of the a circular cylinder having the same volume. Further, the present disclosure relates to a sputtering system comprising at least one anode rod, wherein the anode rod having a lateral surface area that is at least 2 times greater than the lateral surface area of the a circular cylinder having the same volume, and at least one sputtering cathode assembly comprising a backing device selected of the group consisting of a backing plate for a planar target, and a target backing tube for a rotatable cylindrical target.
摘要翻译： 本公开涉及一种用于溅射系统的阳极棒，其包括靶，阳极杆的横向表面积比具有相同体积的圆柱体的侧表面积至少大2倍。 此外，本公开涉及一种包括至少一个阳极棒的溅射系统，其中阳极杆的侧表面积比具有相同体积的圆柱体的侧表面积至少大2倍，并且在 至少一个溅射阴极组件包括选自由用于平面靶的背板和用于可旋转圆柱形靶的目标背衬管组的背衬装置。
-
公开(公告)号：US20090025885A1
公开(公告)日：2009-01-29
申请号：US12174895
申请日：2008-07-17
CPC分类号： C23C14/12 , C23C14/225 , C23C14/243 , C23C14/246 , C23C14/562
摘要： The invention relates to an evaporation apparatus for depositing material on a vertically oriented substrate (10). The apparatus comprises at least one evaporation crucible (100) with the evaporation crucible (100) having an evaporation surface (120) for evaporating the material (300) wherein the evaporation surface is inclined at an inclination angle (α) in relation to the horizontal. The invention further provides a method for evaporating a substrate with the steps of providing a vertically oriented substrate (10); providing a crucible having an evaporation surface (120) for evaporating a material; evaporating the material on the evaporation surface (120) that is inclined at an inclination angle (α) in relation to the horizontal.
摘要翻译： 本发明涉及一种用于在垂直取向的基板（10）上沉积材料的蒸发装置。 该装置包括至少一个具有蒸发坩埚（100）的蒸发坩埚（100），蒸发坩埚（100）具有用于蒸发材料（300）的蒸发表面（120），其中蒸发表面相对于水平面倾斜（α） 。 本发明还提供了一种用于蒸发衬底的方法，其步骤是提供垂直取向的衬底（10）; 提供具有用于蒸发材料的蒸发表面（120）的坩埚; 蒸发蒸发表面（120）上相对于水平方向以倾斜角（α）倾斜的材料。
-
8.发明申请公开(公告)号：US20150179486A1
公开(公告)日：2015-06-25
申请号：US14642475
申请日：2015-03-09
IPC分类号： H01L21/67
CPC分类号： H01L21/67201 , Y10T137/0379
摘要： A lock chamber for a substrate processing system is provided which includes at least a first conduit adapted to provide an inner portion of the lock chamber in fluid communication with atmospheric pressure or overpressure. Additionally, the lock chamber includes at least a first control valve for controlling a flow rate of the fluid communication of the inner portion of the chamber with the atmospheric pressure or the overpressure, wherein the control valve is adapted to continuously control the flow rate. Furthermore, an according method, a computer program and a computer readable medium adapted for performing the method is provided.
摘要翻译： 提供了一种用于基板处理系统的锁定室，其包括至少第一导管，其适于提供与大气压力或超压力流体连通的锁定室的内部。 此外，锁定室至少包括第一控制阀，用于控制室内部与大气压或超压力的流体连通的流量，其中控制阀适于连续地控制流量。 此外，提供了一种适用于执行该方法的依据方法，计算机程序和计算机可读介质。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.022 秒)
