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    Methods of manufacturing solar cell devices
    1.
    发明授权
    Methods of manufacturing solar cell devices 有权
    制造太阳能电池装置的方法

    公开(公告)号：US08859324B2

    公开(公告)日：2014-10-14

    申请号：US13739390

    申请日：2013-01-11

    申请人： Michael P. Stewart ,  Prabhat Kumar ,  Kapila P. Wijekoon ,  Lin Zhang ,  Hari K. Ponnekanti

    发明人： Michael P. Stewart ,  Prabhat Kumar ,  Kapila P. Wijekoon ,  Lin Zhang ,  Hari K. Ponnekanti

    IPC分类号： H01L21/00 ,  H01L31/0224

    CPC分类号： H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

    摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.

    摘要翻译： 本发明的实施例涉及制造太阳能电池的方法。 特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。 通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。 本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

    METHODS OF MANUFACTURING SOLAR CELL DEVICES
    4.
    发明申请
    METHODS OF MANUFACTURING SOLAR CELL DEVICES 有权
    制造太阳能电池器件的方法

    公开(公告)号：US20130183796A1

    公开(公告)日：2013-07-18

    申请号：US13739390

    申请日：2013-01-11

    申请人： Michael P. Stewart ,  Prabhat Kumar ,  Kapila P. Wijekoon ,  Lin Zhang ,  Hari K. Ponnekanti

    发明人： Michael P. Stewart ,  Prabhat Kumar ,  Kapila P. Wijekoon ,  Lin Zhang ,  Hari K. Ponnekanti

    IPC分类号： H01L31/0224

    CPC分类号： H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

    摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.

    摘要翻译： 本发明的实施例涉及制造太阳能电池的方法。 特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。 通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。 本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

    REAR-POINT-CONTACT PROCESS OR PHOTOVOLTAIC CELLS
    5.
    发明申请
    REAR-POINT-CONTACT PROCESS OR PHOTOVOLTAIC CELLS 审中-公开
    后点接触过程或光伏电池

    公开(公告)号：US20130109133A1

    公开(公告)日：2013-05-02

    申请号：US13651221

    申请日：2012-10-12

    申请人： Michel R. Frei ,  Hemant P. Mungekar ,  Hari K. Ponnekanti

    发明人： Michel R. Frei ,  Hemant P. Mungekar ,  Hari K. Ponnekanti

    IPC分类号： H01L31/02

    CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/547

    摘要： Embodiments of the invention generally relate to methods for performing rear-point-contact processes on substrates, particularly solar cell substrates. The methods generally include disposing a substrate on a substrate support which functions as a mask during deposition of a passivation layer on a back surface of the substrate. A process gas is introduced to an area between the back surface of the substrate and the substrate support in order to deposit the passivation layer on the back surface of the substrate. The deposited passivation layer has openings therethrough in order to facilitate electrical contact of the substrate with a metallization layer subsequently formed over the passivation layer. The passivation layer is formed without requiring a separate patterning and etching process of the passivation layer.

    摘要翻译： 本发明的实施例一般涉及在衬底，特别是太阳能电池衬底上执行背点接触工艺的方法。 所述方法通常包括在衬底的背面上沉积钝化层的过程中将衬底设置在衬底支撑体上，其用作掩模。 将工艺气体引入到衬底的背面和衬底支撑件之间的区域中，以便将钝化层沉积在衬底的背面上。 沉积的钝化层具有穿过其的开口，以便于衬底与随后在钝化层上形成的金属化层的电接触。 形成钝化层，而不需要钝化层的单独图案化和蚀刻工艺。

    Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding
    7.
    发明授权
    Front end wafer staging with wafer cassette turntables and on-the-fly wafer center finding 失效
    具有晶圆盒转盘的前端晶片分级和即时晶片中心发现

    公开(公告)号：US6082950A

    公开(公告)日：2000-07-04

    申请号：US752463

    申请日：1996-11-18

    申请人： Allen Altwood ,  Kelly Colborne ,  Kevin Fairbairn ,  Christopher Lane ,  Hari K. Ponnekanti ,  Satish Sundar

    发明人： Allen Altwood ,  Kelly Colborne ,  Kevin Fairbairn ,  Christopher Lane ,  Hari K. Ponnekanti ,  Satish Sundar

    IPC分类号： H01L21/677 ,  B65H5/08

    CPC分类号： H01L21/67778 ,  H01L21/67742 ,  H01L21/67745 ,  Y10S414/137

    摘要： A front end staging method and apparatus is provided to introduce and remove a set of wafers from a vacuum processing system. The system generally comprises a support platform, one or more wafer cassette turntables disposed on the platform, a wafer handler disposed adjacent the turntables, a wafer center finding device and a filter disposed to control particles in the vicinity of the wafers. The wafer cassette turntables are rotatably mounted to the support in the preferred embodiment. The processing system may also include one or more processing chambers, where each processing chamber defines a plurality of isolated processing regions therein. The wafer center finding device may include an optical sensor system including optimal emitters aligned with optical sensors.

    摘要翻译： 提供了一种前端分级方法和装置，以从真空处理系统引入和移除一组晶片。 该系统通常包括支撑平台，设置在平台上的一个或多个晶片盒转盘，与转台相邻设置的晶片处理器，晶片中心发现装置和设置成控制晶片附近的颗粒的滤光器。 在优选实施例中，晶片盒转盘可旋转地安装到支撑件上。 处理系统还可以包括一个或多个处理室，其中每个处理室在其中限定多个隔离的处理区域。 晶片中心发现装置可以包括光学传感器系统，其包括与光学传感器对准的最佳发射器。

    STATIC DEPOSITION PROFILE MODULATION FOR LINEAR PLASMA SOURCE
    9.
    发明申请
    STATIC DEPOSITION PROFILE MODULATION FOR LINEAR PLASMA SOURCE 审中-公开
    线性等离子体源的静态沉积剖面调制

    公开(公告)号：US20130273262A1

    公开(公告)日：2013-10-17

    申请号：US13447035

    申请日：2012-04-13

    申请人： Manoj Vellaikal ,  Michael S. Cox ,  Hemant P. Mungekar ,  Chikuang C. Wang ,  Lin Zhang ,  Hari K. Ponnekanti ,  Michael P. Stewart ,  Edward P. Hammond, IV ,  Alexander S. Polyak

    发明人： Manoj Vellaikal ,  Michael S. Cox ,  Hemant P. Mungekar ,  Chikuang C. Wang ,  Lin Zhang ,  Hari K. Ponnekanti ,  Michael P. Stewart ,  Edward P. Hammond, IV ,  Alexander S. Polyak

    IPC分类号： C23C16/50

    CPC分类号： C23C16/45565 ,  C23C16/45589 ,  C23C16/50 ,  C23C16/54

    摘要： Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.

    摘要翻译： 本文描述了使用线性等离子体源来控制膜沉积的方法和装置。 该装置包括：喷嘴，其中具有用于使气体流过其中的开口;输送机，用于支撑其上邻近喷淋头设置的一个或多个基板;以及用于使气体离子化的电源。 电离气体可以是用于在衬底上沉积材料的源气体。 可以例如使用包括在该装置中的气体整形装置来调节衬底上的材料的沉积轮廓。 附加地或替代地，沉积轮廓可以通过使用可启动喷头来调节。 该方法包括将衬底暴露于电离气体以在衬底上沉积膜，其中当衬底被输送到靠近喷头时，电离气体受到气体整形装置的影响，从而将膜均匀地沉积在衬底上。

    SELECTIVE ATOMIC LAYER DEPOSITION OF PASSIVATION LAYERS FOR SILICON-BASED PHOTOVOLTAIC DEVICES
    10.
    发明申请
    SELECTIVE ATOMIC LAYER DEPOSITION OF PASSIVATION LAYERS FOR SILICON-BASED PHOTOVOLTAIC DEVICES 审中-公开
    用于硅基的光电器件的钝化层的选择性原子层沉积

    公开(公告)号：US20130157409A1

    公开(公告)日：2013-06-20

    申请号：US13715767

    申请日：2012-12-14

    申请人： Kaushik VAIDYA ,  Hari K. PONNEKANTI

    发明人： Kaushik VAIDYA ,  Hari K. PONNEKANTI

    IPC分类号： H01L31/18

    CPC分类号： H01L31/18 ,  H01L21/76802 ,  H01L31/02167 ,  Y02E10/50

    摘要： Embodiments of the invention generally provide methods for forming a silicon-based photovoltaic device. In one embodiment, a method includes forming a pattern inhibitor layer on a back surface of a substrate, wherein the pattern inhibitor layer covers a first portion of the back surface and a second portion of the back surface remains substantially free of the pattern inhibitor layer. The method further includes forming a passivation layer containing aluminum oxide on the second portion of the back surface and maintaining the pattern inhibitor layer substantially free of the passivation layer during a selective atomic layer deposition (S-ALD) process. Additionally, the method includes removing the pattern inhibitor layer from the back surface to reveal the first portion of the back surface and subsequently forming a contact layer on the first portion of the back surface.

    摘要翻译： 本发明的实施方案通常提供用于形成硅基光伏器件的方法。 在一个实施方案中，一种方法包括在衬底的背面上形成图案抑制剂层，其中图案抑制剂层覆盖背面的第一部分，并且后表面的第二部分基本上没有图案抑制层。 该方法还包括在背面的第二部分上形成含有氧化铝的钝化层，并且在选择性原子层沉积（S-ALD）工艺期间保持图案抑制层基本上不含钝化层。 此外，该方法包括从后表面去除图案抑制层，以露出背面的第一部分，随后在背面的第一部分上形成接触层。