公开(公告)号：US5728421A

公开(公告)日：1998-03-17

申请号：US697402

申请日：1996-08-23

申请人： Ernst Michael Gyorgy ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover ,  Suzanne Rachel Gyorgy

发明人： Ernst Michael Gyorgy ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover ,  Suzanne Rachel Gyorgy

IPC分类号： C30B23/06 ,  H01F10/18 ,  H01F10/193 ,  H01F10/20 ,  H01F10/30 ,  H01F17/04 ,  H01F41/20 ,  H01L21/822 ,  H01L27/04 ,  H01L29/34 ,  B05D5/12 ,  C23C16/40

CPC分类号： H01F41/20 ,  H01F10/20 ,  H01F10/265 ,  H01F10/30

摘要： Ferrite films having excellent crystalline and magnetic properties are obtainable without high temperature (>500.degree. C.) processing if an appropriate template layer is deposited on a conventional substrate body (e.g., SrTiO.sub.3, cubic zirconia, Si), and the ferrite is deposited on the annealed template. The template is a spinel-structure metal oxide that has a lattice constant in the range 0.79-0.89 nm, preferably within about 0.015 nm of the lattice constant of the ferrite. Exemplarily, a NiFe.sub.2 O.sub.4 film was deposited at 400.degree. C. on a CoCr.sub.2 O.sub.4 template which had been deposited on (100) SrTiO.sub.3. The magnetization of the ferrite film at 4000 Oe was more than double the magnetization of a similarly deposited comparison ferrite film (NiFe.sub.2 O.sub.4 on SrTiO.sub.3), and was comparable to that of a NiFe.sub.2 O.sub.4 film on SrTiO.sub.3 that was annealed at 1000.degree. C. The ability to produce ferrite films of good magnetic properties without high temperature treatment inter alia makes possible fabrication of on-board magnetic components (e.g., inductor) on Si chips designed for operation at relatively high frequencies, e.g., >10 MHz, even at about 100 MHz.

摘要翻译： 如果在常规基板主体（例如，SrTiO 3，立方氧化锆，Si）上沉积适当的模板层，则不需要高温（> 500℃）处理即可获得具有优异结晶和磁性能的铁氧体膜，铁素体沉积在 退火模板。 该模板是尖晶石结构金属氧化物，其晶格常数在铁素体的晶格常数的0.79-0.89nm范围内，优选在约0.015nm范围内。 示例性地，在400℃下沉积在（100）SrTiO 3上的CoCr 2 O 4模板上沉积NiFe 2 O 4膜。 铁氧体膜在4000Oe下的磁化强度是同样沉积的比较铁氧体膜（SrTiO3上的NiFe2O4）的磁化强度的两倍，并且与在1000℃退火的SrTiO 3上的NiFe 2 O 4膜的磁化相当。 生产具有良好磁性能的铁氧体膜，而不需要高温处理，特别是可以在设计用于在相对高的频率（例如> 10MHz）操作的Si芯片上制造车载磁性部件（例如，电感器），甚至在约100MHz。