利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

3 条记录 (耗时 0.01 秒)

    Devices using transparent conductive GaInO.sub.3 films
    2.
    发明授权
    Devices using transparent conductive GaInO.sub.3 films 失效
    使用透明导电GaInO3薄膜的器件

    公开(公告)号：US5652062A

    公开(公告)日：1997-07-29

    申请号：US143813

    申请日：1993-10-27

    申请人： Robert Joseph Cava ,  Julia Mae Phillips ,  Gordon Albert Thomas

    发明人： Robert Joseph Cava ,  Julia Mae Phillips ,  Gordon Albert Thomas

    IPC分类号： C23C14/08 ,  C23C14/28 ,  B32B17/06

    CPC分类号： C23C14/28 ,  C23C14/086 ,  Y10T428/265

    摘要： Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.

    摘要翻译： 申请人已经发现通过脉冲激光沉积在衬底上生长的导电掺杂的GaInO 3薄膜具有与常规宽带隙透明导体相当的导电性，同时表现出优异的光透射性，特别是在可见光谱的绿色和蓝色波长区域。 在分压为0.1mTorr至100mTorr的含氧气氛中，底物温度范围为室温至350℃。 优选的激光源是在深紫外线中操作的准分子激光器。

    Article comprising spinel-structure material on a substrate, and method of making the article
    3.
    发明授权
    Article comprising spinel-structure material on a substrate, and method of making the article 失效
    在基材上包含尖晶石结构材料的制品以及制造该制品的方法

    公开(公告)号：US5728421A

    公开(公告)日：1998-03-17

    申请号：US697402

    申请日：1996-08-23

    申请人： Ernst Michael Gyorgy ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover ,  Suzanne Rachel Gyorgy

    发明人： Ernst Michael Gyorgy ,  Julia Mae Phillips ,  Yuri Suzuki ,  Robert Bruce van Dover ,  Suzanne Rachel Gyorgy

    IPC分类号： C30B23/06 ,  H01F10/18 ,  H01F10/193 ,  H01F10/20 ,  H01F10/30 ,  H01F17/04 ,  H01F41/20 ,  H01L21/822 ,  H01L27/04 ,  H01L29/34 ,  B05D5/12 ,  C23C16/40

    CPC分类号： H01F41/20 ,  H01F10/20 ,  H01F10/265 ,  H01F10/30

    摘要： Ferrite films having excellent crystalline and magnetic properties are obtainable without high temperature (>500.degree. C.) processing if an appropriate template layer is deposited on a conventional substrate body (e.g., SrTiO.sub.3, cubic zirconia, Si), and the ferrite is deposited on the annealed template. The template is a spinel-structure metal oxide that has a lattice constant in the range 0.79-0.89 nm, preferably within about 0.015 nm of the lattice constant of the ferrite. Exemplarily, a NiFe.sub.2 O.sub.4 film was deposited at 400.degree. C. on a CoCr.sub.2 O.sub.4 template which had been deposited on (100) SrTiO.sub.3. The magnetization of the ferrite film at 4000 Oe was more than double the magnetization of a similarly deposited comparison ferrite film (NiFe.sub.2 O.sub.4 on SrTiO.sub.3), and was comparable to that of a NiFe.sub.2 O.sub.4 film on SrTiO.sub.3 that was annealed at 1000.degree. C. The ability to produce ferrite films of good magnetic properties without high temperature treatment inter alia makes possible fabrication of on-board magnetic components (e.g., inductor) on Si chips designed for operation at relatively high frequencies, e.g., >10 MHz, even at about 100 MHz.

    摘要翻译： 如果在常规基板主体（例如，SrTiO 3，立方氧化锆，Si）上沉积适当的模板层，则不需要高温（> 500℃）处理即可获得具有优异结晶和磁性能的铁氧体膜，铁素体沉积在 退火模板。 该模板是尖晶石结构金属氧化物，其晶格常数在铁素体的晶格常数的0.79-0.89nm范围内，优选在约0.015nm范围内。 示例性地，在400℃下沉积在（100）SrTiO 3上的CoCr 2 O 4模板上沉积NiFe 2 O 4膜。 铁氧体膜在4000Oe下的磁化强度是同样沉积的比较铁氧体膜（SrTiO3上的NiFe2O4）的磁化强度的两倍，并且与在1000℃退火的SrTiO 3上的NiFe 2 O 4膜的磁化相当。 生产具有良好磁性能的铁氧体膜，而不需要高温处理，特别是可以在设计用于在相对高的频率（例如> 10MHz）操作的Si芯片上制造车载磁性部件（例如，电感器），甚至在约100MHz。