摘要:
A semiconductor device includes a substrate, a stacked structure of insulating layers and gate electrodes alternately and repeatedly stacked on the substrate, and a pillar passing through the stacked-layer structure. The insulating layers include lower insulating layers, intermediate insulating layers disposed on the lower insulating layers, and upper insulating layers disposed on the intermediate insulating layers. The lower insulating layers have a hardness less than that of the intermediate insulating layers, and the upper insulating layers have a hardness greater than that of the intermediate insulating layers.
摘要:
A variable resistance memory device, and methods of manufacturing the same, include a plurality of first conductive structures extending in a first direction, a plurality of second conductive structures extending in a second direction crossing the first direction over the first conductive structures, the second conductive structures, and a plurality of memory cells that are formed at intersections at which the first conductive structures and the second conductive structures overlap each other, and each includes a selection element and a variable resistance element sequentially stacked. An upper surface of each of the first conductive structures has a width in the second direction less than a width of a bottom surface of each of the selection elements.
摘要:
Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
摘要:
A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.
摘要:
Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.
摘要:
Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.
摘要:
Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
摘要:
An inspecting apparatus for a solar cell and an inspecting method are provided. The inspecting apparatus for the solar cell includes a head unit having a plurality of probe units, a rotation unit rotating the head unit according to an interval of cells of the solar cell, a controller controlling a rotation angle of the head unit by controlling the rotation unit, and a wire unit connected to the head unit to be electrically connected to the probe units.
摘要:
A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.
摘要:
A method of electrically eliminating defective solar cell units that are disposed within an integrated solar cells module and a method of trimming an output voltage of the integrated solar cells module are provided, where the solar cells module has a large number (e.g., 50 or more) of solar cell units integrally disposed therein and initially connected in series one to the next. The method includes providing a corresponding plurality of repair pads, each integrally extending from a respective electrode layer of the solar cell units, and providing a bypass conductor integrated within the module and extending adjacent to the repair pads. Pad-to-pad spacings and pad-to-bypass spacings are such that pad-to-pad connecting bridges may be selectively created between adjacent ones of the repair pads and such that pad-to-bypass connecting bridges may be selectively created between the repair pads and the adjacently extending bypass conductor.