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9 条记录 (耗时 0.017 秒)

    Liquid crystal display and fabricating method thereof
    1.
    发明授权
    Liquid crystal display and fabricating method thereof 失效
    液晶显示及其制造方法

    公开(公告)号：US06278130B1

    公开(公告)日：2001-08-21

    申请号：US09453172

    申请日：1999-12-02

    申请人： Seung-Ki Joo ,  Tae-Hyung Ihn

    发明人： Seung-Ki Joo ,  Tae-Hyung Ihn

    IPC分类号： H01L2904

    CPC分类号： G02F1/1368 ,  H01L29/78609 ,  H01L29/78621

    摘要： An LCD includes a substrate; a first transistor formed on the substrate, the first transistor having a MILC (metal-induced lateral crystallization) region formed on a substrate with a semiconductor material and including a channel region; and MIC (metal-induced crystallization) regions formed on sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region; a second transistor formed on the substrate, the second transistor having a MILC (metal-induced lateral crystallization) region formed on the same substrate with a semiconductor material and including a channel region; and MIC (metal-induced crystallization) regions formed on sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region; and a third transistor formed on the substrate, the third transistor having an amorphous silicon layer in an active layer.

    摘要翻译： LCD包括基板; 形成在所述衬底上的第一晶体管，所述第一晶体管具有形成在具有半导体材料并且包括沟道区的衬底上的MILC（金属诱导侧向结晶）区域; 和MI（金属诱导结晶）区域形成在具有半导体材料的MILC区域的侧面上，其中MILC区域和一个MIC区域之间的至少一个边界位于沟道区域的外部; 形成在所述基板上的第二晶体管，所述第二晶体管具有与半导体材料形成在同一基板上并且包括沟道区的MILC（金属诱导侧向结晶）区域; 和MI（金属诱导结晶）区域形成在具有半导体材料的MILC区域的侧面上，其中MILC区域和一个MIC区域之间的至少一个边界位于沟道区域的外部; 以及形成在所述衬底上的第三晶体管，所述第三晶体管在有源层中具有非晶硅层。

    Dielectric thin film and fabrication method thereof
    2.
    发明授权
    Dielectric thin film and fabrication method thereof 失效
    电介质薄膜及其制造方法

    公开(公告)号：US5874379A

    公开(公告)日：1999-02-23

    申请号：US610282

    申请日：1996-03-04

    申请人： Seung-Ki Joo ,  Jae-Hyun Joo

    发明人： Seung-Ki Joo ,  Jae-Hyun Joo

    IPC分类号： G11C11/21 ,  C23C14/08 ,  H01B3/00 ,  H01B3/12 ,  H01G4/12 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/108 ,  C04B35/468 ,  C04B35/47

    CPC分类号： H01L28/55 ,  C23C14/088 ,  H01G4/1227

    摘要： An improved dielectric thin film and a capacitor with the same for a semiconductor and a fabrication method thereof capable of preventing leakage current in operation, which dielectric thin film includes (Ba, Sr)TiO.sub.3 containing Ta, and which the capacitor includes a substrate; an interlayer insulation layer formed on a substrate, thereby exposing a predetermined portion of the substrate to the outside; a lower electrode formed on a predetermined portion of the interlayer insulation layer including the exposed portion of the substrate; a dielectric thin film consisting of (Ba, Sr)TiO.sub.3 containing Ta and formed on the interlayer insulation film including the lower electrode; and an upper electrode formed on the dielectric thin film.

    摘要翻译： 一种电介质薄膜包括（Ba，Sr）TiO 3的电介质薄膜，并且该电容器包括衬底的改进的电介质薄膜及其半导体用电容器及其制造方法能够防止工作中的漏电流。 形成在基板上的层间绝缘层，从而将基板的预定部分暴露于外部; 形成在所述层间绝缘层的包括所述基板的所述露出部分的预定部分上的下电极; 由含有Ta的（Ba，Sr）TiO 3和形成在包括下电极的层间绝缘膜上形成的电介质薄膜; 以及形成在电介质薄膜上的上电极。

    Field emission backlight, display apparatus using the same and a method of manufacturing the same
    3.
    发明申请
    Field emission backlight, display apparatus using the same and a method of manufacturing the same 审中-公开
    场致发射背光，使用其的显示装置及其制造方法

    公开(公告)号：US20070228930A1

    公开(公告)日：2007-10-04

    申请号：US11713203

    申请日：2007-03-02

    申请人： Hyeong-Suk Yoo ,  Seung-Ki Joo

    发明人： Hyeong-Suk Yoo ,  Seung-Ki Joo

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01J63/06 ,  G02F1/133602 ,  G02F2001/133625 ,  H01J61/305 ,  H01J63/02 ,  H01J63/04

    摘要： A field emission backlight for a display device includes upper and lower substrates. The upper substrate includes an upper transparent substrate, a transparent electrode, and a fluorescent part. The lower substrate includes a lower transparent substrate having a receiving groove, a first electrode part, a second electrode part, and an electron-emitting part. The first electrode part is formed on an upper surface of the lower transparent substrate and the second electrode part is formed on a bottom surface of the receiving groove, so that the gap between the first and second electrode parts can be reduced below that conventionally required. This, in turn, enables the level of a voltage applied between the first and the second electrode parts to be reduced, and a corresponding reduction in the manufacturing cost of a field emission backlight to be achieved.

    摘要翻译： 用于显示装置的场发射背光包括上基板和下基板。 上基板包括上透明基板，透明电极和荧光部件。 下基板包括具有接收槽的下透明基板，第一电极部分，第二电极部分和电子发射部分。 第一电极部分形成在下透明基板的上表面上，并且第二电极部分形成在接收槽的底表面上，使得第一和第二电极部分之间的间隙可以降低到低于传统所需的位置。 这又能够降低在第一和第二电极部分之间施加的电压的电平，并且实现场致发射背光的制造成本的相应降低。

    Method of fabricating thin film transistor
    4.
    发明授权
    Method of fabricating thin film transistor 有权

    公开(公告)号：US06221702B1

    公开(公告)日：2001-04-24

    申请号：US09143305

    申请日：1998-08-28

    申请人： Seung-Ki Joo ,  Tae-Kyung Kim

    发明人： Seung-Ki Joo ,  Tae-Kyung Kim

    IPC分类号： H01L2100

    CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78675

    摘要： The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.

    Method of fabricating thin film transistor
    9.
    发明授权
    Method of fabricating thin film transistor 失效
    制造薄膜晶体管的方法

    公开(公告)号：US06511871B2

    公开(公告)日：2003-01-28

    申请号：US09794770

    申请日：2001-02-28

    申请人： Seung-Ki Joo ,  Tae-Kyung Kim

    发明人： Seung-Ki Joo ,  Tae-Kyung Kim

    IPC分类号： H01L2100

    CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78675

    摘要： The present invention relates to a method of fabricating a thin film transistor in which a metal silicide line generated from Metal Induced Lateral Crystallization is located at the outside of a channel region. The present invention includes the steps of forming a semiconductor layer on a substrate wherein the semiconductor layer has a first region, a channel region and a second region in order, forming a gate insulating layer/a gate electrode on the channel region, doping the first and the second region heavily with impurity, forming a metal film pattern making the first region a metal-offset, and crystallizing the semiconductor layer by means of applying thermal treatment to the semiconductor layer having the metal film.

    摘要翻译： 本发明涉及一种制造薄膜晶体管的方法，其中由金属诱导横向晶化产生的金属硅化物线位于沟道区的外部。 本发明包括在衬底上形成半导体层的步骤，其中半导体层依次具有第一区域，沟道区域和第二区域，在沟道区域上形成栅极绝缘层/栅电极，掺杂第一 并且第二区域大量杂质，形成使第一区域成为金属偏移的金属膜图案，并且通过对具有金属膜的半导体层进行热处理使半导体层结晶。