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    Method of manufacturing flexible display device
    1.
    发明授权
    Method of manufacturing flexible display device 有权
    制造柔性显示装置的方法

    公开(公告)号：US09280007B2

    公开(公告)日：2016-03-08

    申请号：US13551130

    申请日：2012-07-17

    申请人： Tae-Youn Kim ,  Sang-Soo Kim ,  Se-Jun Cho

    发明人： Tae-Youn Kim ,  Sang-Soo Kim ,  Se-Jun Cho

    IPC分类号： B29D11/00 ,  G02F1/1333

    CPC分类号： G02F1/133305 ,  H01L51/003

    摘要： A method of manufacturing a flexible display device includes forming a buffer layer on a base substrate, wherein the buffer layer is transparent and has a optical bandgap of about 3.0 eV to about 4.0 eV; forming a flexible substrate on the buffer layer; forming display elements on the flexible substrate; and irradiating a laser to the buffer layer to detach the flexible substrate from the base substrate.

    摘要翻译： 制造柔性显示装置的方法包括在基底基板上形成缓冲层，其中缓冲层是透明的并具有约3.0eV至约4.0eV的光学带隙; 在缓冲层上形成柔性基板; 在所述柔性基板上形成显示元件; 并将激光照射到缓冲层，以将柔性基板与基底基板分离。

    Level shifter with output spike reduction
    2.
    发明授权
    Level shifter with output spike reduction 有权
    电平移位器与输出尖峰减少

    公开(公告)号：US09030248B2

    公开(公告)日：2015-05-12

    申请号：US12460442

    申请日：2009-07-17

    申请人： Tae Youn Kim ,  Robert Mark Englekirk ,  Dylan J. Kelly

    发明人： Tae Youn Kim ,  Robert Mark Englekirk ,  Dylan J. Kelly

    IPC分类号： H03L5/00 ,  H03K19/0185 ,  H03K19/003

    CPC分类号： H03K19/0185 ,  H03K19/00369

    摘要： A level shifter, or method, producing a final output from a driver supplied by a high-side source driver providing VDD or common, and a low-side source driver providing common or VSS. A delay is introduced to prevent a source driver output at common from beginning to transition toward a supply rail until a delaying source driver at a rail begins transitioning toward common. The level shifter may be single-ended or differential, and the delaying source driver may be coupled to the same final output driver as is the delayed source driver, or may be coupled to a different final output driver. The level shifter may have a second level shifter front end stage, which may have high-side and low-side intermediate source driver outputs coupled by a capacitor, and/or may couple one of the supplies to all intermediate source drivers via a common impedance or current limit Zs.

    摘要翻译： 电平移位器或方法产生由提供VDD或公共端的高端源极驱动器提供的驱动器的最终输出，以及提供通用或VSS的低端源极驱动器。 引入延迟以防止源驱动器从共同开始向供应轨转换，直到轨道上的延迟源驱动器开始朝向普通转换。 电平移位器可以是单端或差分，并且延迟源驱动器可以与延迟源驱动器耦合到相同的最终输出驱动器，或者可以耦合到不同的最终输出驱动器。 电平移位器可以具有第二电平移位器前端级，其可以具有由电容器耦合的高侧和低侧中间源驱动器输出，和/或可以经由公共阻抗将所述电源中的一个耦合到所有中间源驱动器 或当前极限Zs。

    METHOD OF FABRICATING SOLAR CELL
    5.
    发明申请
    METHOD OF FABRICATING SOLAR CELL 有权
    制造太阳能电池的方法

    公开(公告)号：US20100210062A1

    公开(公告)日：2010-08-19

    申请号：US12641873

    申请日：2009-12-18

    申请人： Tae Youn KIM ,  Weon Seo Park ,  Jeong Woo Lee ,  Seong Kee Park ,  Kyung Jin Shim

    发明人： Tae Youn KIM ,  Weon Seo Park ,  Jeong Woo Lee ,  Seong Kee Park ,  Kyung Jin Shim

    IPC分类号： H01L31/18

    CPC分类号： H01L51/442 ,  H01G9/209 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/1884 ,  H01L51/447 ,  Y02E10/542 ,  Y02E10/549

    摘要： A method of fabricating a solar cell is disclosed. The solar cell fabricating method includes forming a first transparent conductive layer on a transparent substrate, texturing an upper surface of the first transparent conductive layer using an etchant solution configured to contain an acid with a molecular weight of about 58˜300, forming a photoelectric conversion layer on the first transparent conductive layer, forming a second transparent conductive layer on the photoelectric conversion layer, and forming a rear electrode on the second transparent conductive layer.

    摘要翻译： 公开了一种制造太阳能电池的方法。 太阳能电池的制造方法包括在透明基板上形成第一透明导电层，使用配置成含有约58〜300的分子量的酸的蚀刻剂溶液对第一透明导电层的上表面进行纹理化，形成光电转换 在第一透明导电层上形成第二透明导电层，在第二透明导电层上形成后电极。

    Method of manufacturing a thin film solar cell
    6.
    发明申请
    Method of manufacturing a thin film solar cell 有权
    制造薄膜太阳能电池的方法

    公开(公告)号：US20100197072A1

    公开(公告)日：2010-08-05

    申请号：US12591943

    申请日：2009-12-04

    申请人： Tae-Youn Kim ,  Won-Seo Park ,  Jeong-Woo Lee ,  Seong-Kee Park ,  Kyung-Jin Shim

    发明人： Tae-Youn Kim ,  Won-Seo Park ,  Jeong-Woo Lee ,  Seong-Kee Park ,  Kyung-Jin Shim

    IPC分类号： H01L31/18

    CPC分类号： H01L31/056 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/52

    摘要： A method of manufacturing a thin film solar cell includes steps of preparing a substrate on which unit cells are defined, forming transparent conducive layers on the substrate and corresponding to the unit cells, respectively, the transparent conductive layers spaced apart from each other with a first separation line therebetween, forming light-absorbing layers on the transparent conductive layers and corresponding to the unit cells, respectively, the light-absorbing layers spaced apart from each other with a second separation line therebetween, forming a third separation line in each of the light-absorbing layers, the third separation line spaced apart from the second separation line, forming a reflection material layer by disposing a silk screen over the third separation line and applying a conductive paste, and forming reflection electrodes corresponding to the unit cells, respectively, by sintering the reflection material layer.

    摘要翻译： 制造薄膜太阳能电池的方法包括以下步骤：准备在其上限定单元电池的基板，分别在基板上形成透明导电层并对应于单元电池，所述透明导电层分别与第一 在其间分别在透明导电层上形成光吸收层并分别对应于单元电池，其间的光吸收层彼此间隔开第二分隔线，在每个光线中形成第三分隔线 吸收层，第三分离线与第二分离线间隔开，通过在第三分离线上设置丝网并施加导电浆料形成反射材料层，并分别形成与单元电池对应的反射电极，通过 烧结反射材料层。

    Circuit and method for controlling charge injection in radio frequency switches
    10.
    发明授权
    Circuit and method for controlling charge injection in radio frequency switches 有权

    公开(公告)号：US08143935B2

    公开(公告)日：2012-03-27

    申请号：US11881816

    申请日：2007-07-26

    申请人： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

    发明人： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

    IPC分类号： H03K17/00

    摘要： A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.