公开(公告)号：US20100117203A1

公开(公告)日：2010-05-13

申请号：US11668626

申请日：2007-01-30

申请人： Robert Jeffrey Bailey ,  Hood Chatham ,  Derrick Foster ,  Olivier Laparra ,  Martin Mogaard ,  Cole Porter ,  Taiquing T. Qiu ,  Helmuth Treichel

发明人： Robert Jeffrey Bailey ,  Hood Chatham ,  Derrick Foster ,  Olivier Laparra ,  Martin Mogaard ,  Cole Porter ,  Taiquing T. Qiu ,  Helmuth Treichel

IPC分类号： H01L29/04 ,  H01L21/316 ,  H01L21/26 ,  H01L21/314

CPC分类号： C30B33/005 ,  C30B29/06 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02326 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/67109

摘要： A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250° C. and 1100° C. with admission into the process chamber of diatomic reductant source gas Z-Z′ where Z and Z′ are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed and planes and a film residual stress associated with the film being formed at a temperature of less than 600° C. and having a film thickness that exceeds a film thickness on the crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.

摘要翻译： 提供了一种从硅形成含氧化物的膜的方法，其包括将硅衬底加热至250℃至1100℃的工艺温度，同时进入双原子还原源气体ZZ'的处理室，其中Z和 Z'分别为H，D和T以及稳定的氧化物离子源。 沿着处理室的垂直范围存在多个排气口以在流动上产生反应物。 提供了一批具有多个硅基层的硅衬底，每个硅基层具有暴露的110和100平面，并且在低于600℃的温度下形成与膜相关的膜残余应力。 并且在<100>结晶平面上具有超过100薄膜厚度的<110>薄膜厚度小于20％，或薄膜特征为厚度各向异性小于18％，电击穿场大于10.5MV /厘米。