公开(公告)号：US20050098107A1

公开(公告)日：2005-05-12

申请号：US10947426

申请日：2004-09-21

申请人： Dale Du Bois ,  Cole Porter ,  Martin Mogaard ,  Robert Bailey

发明人： Dale Du Bois ,  Cole Porter ,  Martin Mogaard ,  Robert Bailey

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  F27B20060101 ,  H01L21/00 ,  H01L21/677

CPC分类号： C23C16/4584 ,  C23C16/45578 ,  C23C16/45591 ,  C23C16/46 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67757

摘要： An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes a cross-flow liner to improve gas flow uniformity across the surface of each substrate. The cross-flow liner of the present invention includes a longitudinal bulging section to accommodate a cross-flow injection system. The liner is patterned and sized so that it is conformal to the wafer carrier, and as a result, reduces the gap between the liner and the wafer carrier to reduce or eliminate vortices and stagnation in the gap areas between the wafer carrier and the liner inner wall.

摘要翻译： 提供了用于热处理保持在载体中的基板的装置。 该装置包括横流衬套，以改善穿过每个衬底表面的气流均匀性。 本发明的横流衬套包括纵向凸起部分以适应横流注入系统。 将衬垫图案化并定尺寸使其与晶片载体保持一致，结果减小衬垫和晶片载体之间的间隙，以减少或消除晶片载体和衬垫内部之间的间隙区域中的涡流和停滞 壁。

公开(公告)号：US20100117203A1

公开(公告)日：2010-05-13

申请号：US11668626

申请日：2007-01-30

申请人： Robert Jeffrey Bailey ,  Hood Chatham ,  Derrick Foster ,  Olivier Laparra ,  Martin Mogaard ,  Cole Porter ,  Taiquing T. Qiu ,  Helmuth Treichel

发明人： Robert Jeffrey Bailey ,  Hood Chatham ,  Derrick Foster ,  Olivier Laparra ,  Martin Mogaard ,  Cole Porter ,  Taiquing T. Qiu ,  Helmuth Treichel

IPC分类号： H01L29/04 ,  H01L21/316 ,  H01L21/26 ,  H01L21/314

CPC分类号： C30B33/005 ,  C30B29/06 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02326 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/67109

摘要： A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250° C. and 1100° C. with admission into the process chamber of diatomic reductant source gas Z-Z′ where Z and Z′ are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed and planes and a film residual stress associated with the film being formed at a temperature of less than 600° C. and having a film thickness that exceeds a film thickness on the crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.

摘要翻译： 提供了一种从硅形成含氧化物的膜的方法，其包括将硅衬底加热至250℃至1100℃的工艺温度，同时进入双原子还原源气体ZZ'的处理室，其中Z和 Z'分别为H，D和T以及稳定的氧化物离子源。 沿着处理室的垂直范围存在多个排气口以在流动上产生反应物。 提供了一批具有多个硅基层的硅衬底，每个硅基层具有暴露的110和100平面，并且在低于600℃的温度下形成与膜相关的膜残余应力。 并且在<100>结晶平面上具有超过100薄膜厚度的<110>薄膜厚度小于20％，或薄膜特征为厚度各向异性小于18％，电击穿场大于10.5MV /厘米。

公开(公告)号：US20070010072A1

公开(公告)日：2007-01-11

申请号：US11482887

申请日：2006-07-07

申请人： Robert Bailey ,  Taiqing Qiu ,  Cole Porter ,  Olivier Laparra ,  Robert Chatham ,  Martin Mogaard ,  Helmuth Treichel

发明人： Robert Bailey ,  Taiqing Qiu ,  Cole Porter ,  Olivier Laparra ,  Robert Chatham ,  Martin Mogaard ,  Helmuth Treichel

IPC分类号： H01L21/20

CPC分类号： C23C16/54 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45504 ,  C23C16/45578 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

摘要： A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant. A process for forming such a batch of wafer substrates involves feeding the precursor into a reactor containing a batch of wafer substrates and reacting the precursor at a wafer substrate temperature, total pressure, and precursor flow rate sufficient to create such a layer of material. The delivery of a precursor and co-reactant as needed through vertical tube injectors having multiple orifices with at least one orifice in registry with each of the batch of wafer substrates and exit slits within the reactor to create flow across the surface of each of the wafer substrates in the batch provides the within-wafer and wafer-to-wafer uniformity.

摘要翻译： 一批晶片基板设置有每个晶片基板具有表面。 每个表面涂覆有同时施加到每批晶片衬底的表面的一层材料。 该材料层被施加到在整个表面上变化小于四个厚度百分比的厚度，而不是边缘边界，并且晶片到晶片的厚度变化小于3％。 如此施加的材料层是氧化硅，氮化硅或氮氧化硅，其中该材料层不含碳和氯。 氧化硅或氮氧化硅的形成需要包含共反应物。 氮化氮也通过包含硝化共反应物形成。 用于形成这样一批晶片衬底的方法包括将前体进料到含有一批晶片衬底的反应器中，并在足以产生这种材料层的晶片衬底温度，总压力和前体流速下使前体反应。 根据需要通过具有多个孔的垂直管注射器输送前体和共反应物，其中至少一个孔与反应器内的每批晶片基板和出口狭缝对齐，以产生跨过每个晶片的表面的流动 该批次中的衬底提供了晶片内和晶片与晶片之间的均匀性。