公开(公告)号：US20100117203A1

公开(公告)日：2010-05-13

申请号：US11668626

申请日：2007-01-30

申请人： Robert Jeffrey Bailey ,  Hood Chatham ,  Derrick Foster ,  Olivier Laparra ,  Martin Mogaard ,  Cole Porter ,  Taiquing T. Qiu ,  Helmuth Treichel

发明人： Robert Jeffrey Bailey ,  Hood Chatham ,  Derrick Foster ,  Olivier Laparra ,  Martin Mogaard ,  Cole Porter ,  Taiquing T. Qiu ,  Helmuth Treichel

IPC分类号： H01L29/04 ,  H01L21/316 ,  H01L21/26 ,  H01L21/314

CPC分类号： C30B33/005 ,  C30B29/06 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02326 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/67109

摘要： A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250° C. and 1100° C. with admission into the process chamber of diatomic reductant source gas Z-Z′ where Z and Z′ are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed and planes and a film residual stress associated with the film being formed at a temperature of less than 600° C. and having a film thickness that exceeds a film thickness on the crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.

摘要翻译： 提供了一种从硅形成含氧化物的膜的方法，其包括将硅衬底加热至250℃至1100℃的工艺温度，同时进入双原子还原源气体ZZ'的处理室，其中Z和 Z'分别为H，D和T以及稳定的氧化物离子源。 沿着处理室的垂直范围存在多个排气口以在流动上产生反应物。 提供了一批具有多个硅基层的硅衬底，每个硅基层具有暴露的110和100平面，并且在低于600℃的温度下形成与膜相关的膜残余应力。 并且在<100>结晶平面上具有超过100薄膜厚度的<110>薄膜厚度小于20％，或薄膜特征为厚度各向异性小于18％，电击穿场大于10.5MV /厘米。

公开(公告)号：US5364665A

公开(公告)日：1994-11-15

申请号：US142641

申请日：1993-10-25

申请人： John T. Felts ,  Hood Chatham, III ,  Joseph Countrywood ,  Robert J. Nelson

发明人： John T. Felts ,  Hood Chatham, III ,  Joseph Countrywood ,  Robert J. Nelson

IPC分类号： B05D3/14 ,  C23C16/40 ,  C23C16/50 ,  C23C16/505 ,  C23C16/54 ,  H01J37/32 ,  H05H1/24 ,  B05D3/06

CPC分类号： H01J37/32623 ,  B05D3/141 ,  C23C16/401 ,  C23C16/50 ,  C23C16/545 ,  H01J37/3266 ,  H01J37/3277 ,  H05H1/48 ,  H05H1/50 ,  H05H2001/485

摘要： A plasma treating apparatus is useful for coating substrates with thin films having vapor barrier properties at relatively rapid deposition rates. The apparatus comprises an evacuable chamber, an electrically powered electrode defining a plasma-facing surface within the chamber, and a shield spaced a distance .DELTA. transverse to the plasma-facing surface. During plasma treatments, the plasma is confined to within distance .DELTA. while a substrate is continuously fed through the confined plasma.

摘要翻译： 等离子体处理装置可用于在相对快速的沉积速率下用具有阻气性的薄膜涂覆基板。 该装置包括可抽空室，限定腔室内的等离子体表面的电动电极以及横跨于等离子体表面的距离DELTA隔开的屏蔽。 在等离子体处理期间，等离子体被限制在距离DELTA之内，而衬底被连续馈送通过限制的等离子体。

公开(公告)号：US5224441A

公开(公告)日：1993-07-06

申请号：US767146

申请日：1991-09-27

申请人： John T. Felts ,  Hood Chatham, III ,  Joseph Countrywood ,  Robert J. Nelson

发明人： John T. Felts ,  Hood Chatham, III ,  Joseph Countrywood ,  Robert J. Nelson

IPC分类号： B05D3/14 ,  C23C16/40 ,  C23C16/50 ,  C23C16/505 ,  C23C16/54 ,  H01J37/32 ,  H05H1/24

CPC分类号： H01J37/32623 ,  B05D3/141 ,  C23C16/401 ,  C23C16/50 ,  C23C16/545 ,  H01J37/3266 ,  H01J37/3277 ,  H05H1/48 ,  H05H1/50 ,  H05H2001/485

摘要： A plasma treating apparatus is useful for coating substrates with thin films having vapor barrier properties at relatively rapid deposition rates. The apparatus comprises an evacuable chamber, an electrically powered electrode defining a plasma-facing surface within the chamber, and a shield spaced a distance .DELTA. transverse to the plasma-facing surface. During plasma treatments, the plasma is confined to within distance .DELTA. while a substrate is continuously fed through the confined plasma.

摘要翻译： 等离子体处理装置可用于在相对快速的沉积速率下用具有阻气性的薄膜涂覆基板。 该装置包括可抽空室，限定腔室内的等离子体表面的电动电极以及横跨于等离子体表面的距离DELTA隔开的屏蔽。 在等离子体处理期间，等离子体被限制在距离DELTA之内，而衬底被连续馈送通过限制的等离子体。