-
公开(公告)号：US08148798B2
公开(公告)日：2012-04-03
申请号：US12205495
申请日：2008-09-05
申请人： Takahiro Yamagata
发明人： Takahiro Yamagata
CPC分类号： H01L27/0688 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/8221 , H01L23/5226 , H01L24/03 , H01L24/05 , H01L27/11509 , H01L28/55 , H01L2224/02166 , H01L2224/0401 , H01L2224/05093 , H01L2224/05554 , H01L2224/05624 , H01L2224/114 , H01L2224/116 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/19041 , H01L2924/00014
摘要： The semiconductor device includes a capacitor 36 formed over a semiconductor substrate 10 and including a lower electrode 30, a dielectric film 32 and an upper electrode 34; a first insulation film 58 formed above the capacitor 36; a first interconnection 88a formed over the first insulation film 68; a second insulation film 90 formed over the first insulation film 68 and over the first interconnection 88a; an electrode pad 102 formed over the second insulation film 90: and a monolithic conductor 100 buried in the second insulation film 90 immediately below the electrode pad 102 and buried through the second insulation film 90 down to a part of at least the first insulation layer 68.
摘要翻译： 半导体器件包括形成在半导体衬底10上并包括下电极30，电介质膜32和上电极34的电容器36; 形成在电容器36上方的第一绝缘膜58; 形成在第一绝缘膜68上的第一互连88a; 形成在第一绝缘膜68上并在第一互连88a上方的第二绝缘膜90; 形成在第二绝缘膜90上的电极焊盘102和埋在第二绝缘膜90中的紧固在电极焊盘102下方并且通过第二绝缘膜90埋入至少第一绝缘层68的一部分的单片导体100 。
-
公开(公告)号：US20090001515A1
公开(公告)日：2009-01-01
申请号：US12205495
申请日：2008-09-05
申请人： Takahiro YAMAGATA
发明人： Takahiro YAMAGATA
CPC分类号： H01L27/0688 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/8221 , H01L23/5226 , H01L24/03 , H01L24/05 , H01L27/11509 , H01L28/55 , H01L2224/02166 , H01L2224/0401 , H01L2224/05093 , H01L2224/05554 , H01L2224/05624 , H01L2224/114 , H01L2224/116 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/19041 , H01L2924/00014
摘要： The semiconductor device includes a capacitor 36 formed over a semiconductor substrate 10 and including a lower electrode 30, a dielectric film 32 and an upper electrode 34; a first insulation film 58 formed above the capacitor 36; a first interconnection 88a formed over the first insulation film 68; a second insulation film 90 formed over the first insulation film 68 and over the first interconnection 88a; an electrode pad 102 formed over the second insulation film 90: and a monolithic conductor 100 buried in the second insulation film 90 immediately below the electrode pad 102 and buried through the second insulation film 90 down to a part of at least the first insulation layer 68.
摘要翻译： 半导体器件包括形成在半导体衬底10上并包括下电极30，电介质膜32和上电极34的电容器36; 形成在电容器36上方的第一绝缘膜58; 形成在第一绝缘膜68上的第一互连88a; 形成在第一绝缘膜68上并在第一互连88a上方的第二绝缘膜90; 形成在第二绝缘膜90上的电极焊盘102和埋在第二绝缘膜90中的紧密连接在第二绝缘膜90下方的第一绝缘层68的一部分的单片导体100， 。
-
3.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR 审中-公开制造包含电容器的半导体器件的方法公开(公告)号：US20080199976A1
公开(公告)日：2008-08-21
申请号：US12035066
申请日：2008-02-21
IPC分类号： H01L21/8239
CPC分类号： G11C11/22 , H01G7/06 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device manufacturing method has a step forming a transistor layer portion on a semiconductor substrate, and a step forming a ferroelectric capacitor portion including a lower electrode, a ferroelectric substance and an upper electrode above the transistor layer portion, wherein the step forming the ferroelectric capacitor portion includes adjusting an area of the upper electrode on the basis of manufacturing parameters of the ferroelectric capacitor portion.
摘要翻译： 半导体器件制造方法具有在半导体衬底上形成晶体管层部分的步骤，以及在晶体管层部分上方形成包括下电极，铁电体物质和上电极的铁电电容器部分的步骤，其中形成铁电体 电容器部分包括基于强电介质电容器部分的制造参数调整上电极的面积。
-
公开(公告)号：US08294230B2
公开(公告)日：2012-10-23
申请号：US12548027
申请日：2009-08-26
申请人： Takahiro Yamagata , Kouichi Nagai
发明人： Takahiro Yamagata , Kouichi Nagai
IPC分类号： H01L31/0216
CPC分类号： G06K9/0002
摘要： A surface profile sensor includes an interlayer insulating film provided with a planarized upper surface formed above a semiconductor substrate, a detection electrode film formed on the interlayer insulating film, an upper insulating film formed on the detection electrode film and the interlayer insulating film and including the surface on which a silicon nitride film is exposed, and a protection insulating film deposited on the upper insulating film and made of a tetrahedral amorphous carbon (ta-C) film including a window formed on the detection electrode film.
摘要翻译： 表面轮廓传感器包括设置有形成在半导体衬底上的平坦化上表面的层间绝缘膜，形成在层间绝缘膜上的检测电极膜，形成在检测电极膜和层间绝缘膜上的上绝缘膜， 在其上露出氮化硅膜的表面和沉积在上绝缘膜上并由包含形成在检测电极膜上的窗口的四面体非晶碳（ta-C））制成的保护绝缘膜。
-
公开(公告)号：US20090309180A1
公开(公告)日：2009-12-17
申请号：US12548027
申请日：2009-08-26
申请人： Takahiro Yamagata , Kouichi Nagai
发明人： Takahiro Yamagata , Kouichi Nagai
IPC分类号： H01L31/0216 , H01L31/18 , H01L31/02
CPC分类号： G06K9/0002
摘要： A surface profile sensor includes an interlayer insulating film provided with a planarized upper surface formed above a semiconductor substrate, a detection electrode film formed on the interlayer insulating film, an upper insulating film formed on the detection electrode film and the interlayer insulating film and including the surface on which a silicon nitride film is exposed, and a protection insulating film deposited on the upper insulating film and made of a tetrahedral amorphous carbon (ta-C) film including a window formed on the detection electrode film.
摘要翻译： 表面轮廓传感器包括设置有形成在半导体衬底上的平坦化上表面的层间绝缘膜，形成在层间绝缘膜上的检测电极膜，形成在检测电极膜和层间绝缘膜上的上绝缘膜， 在其上露出氮化硅膜的表面和沉积在上绝缘膜上并由包含形成在检测电极膜上的窗口的四面体非晶碳（ta-C））制成的保护绝缘膜。
-
-
-
-
搜索结果
5 条记录 (耗时 0.016 秒)
