公开(公告)号：US20090230498A1

公开(公告)日：2009-09-17

申请号：US12397765

申请日：2009-03-04

申请人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

发明人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

IPC分类号： H01L31/103

CPC分类号： H01L31/10 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/103

摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.

摘要翻译： 光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。 光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

公开(公告)号：US08030728B2

公开(公告)日：2011-10-04

申请号：US12397765

申请日：2009-03-04

申请人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

发明人： Takaki Iwai ,  Hironari Takehara ,  Hisatada Yasukawa

IPC分类号： H01L31/00

CPC分类号： H01L31/10 ,  H01L27/1443 ,  H01L27/14643 ,  H01L31/103

摘要： An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.

摘要翻译： 光学半导体器件包括半导体衬底; 形成在所述半导体基板上的受光元件; 形成在所述半导体衬底上并位于所述光接收元件附近的光吸收元件; 以及形成在半导体基板上并用于信号处理的半导体元件。 光吸收元件包括第五半导体层，并且光接收元件中的光吸收区域具有与光吸收元件中的光吸收区域不同的结构。

公开(公告)号：US20090261441A1

公开(公告)日：2009-10-22

申请号：US12400346

申请日：2009-03-09

申请人： Hisatada Yasukawa ,  Hironari Takehara ,  Takaki Iwai

发明人： Hisatada Yasukawa ,  Hironari Takehara ,  Takaki Iwai

IPC分类号： H01L31/02 ,  H01L31/112

CPC分类号： H01L31/103 ,  G11B7/13 ,  G11B2007/0006

摘要： An optical semiconductor device includes a light-receiving element on a semiconductor substrate of a first conductivity type, the light-receiving element including a light-receiving portion for converting incident light to an electrical current signal and performing a current amplification. The light-receiving portion includes: a semiconductor layer formed on the semiconductor substrate and having an impurity concentration substantially equal to or less than that of the semiconductor substrate; a first semiconductor region of a second conductivity type formed on the semiconductor layer and having an impurity concentration higher than that of the semiconductor layer; and a second semiconductor region of the first conductivity type selectively formed between the semiconductor substrate and the semiconductor layer and having an impurity concentration higher than those of the semiconductor substrate and the semiconductor layer.

摘要翻译： 光学半导体器件包括在第一导电类型的半导体衬底上的光接收元件，该光接收元件包括用于将入射光转换成电流信号并执行电流放大的光接收部分。 光接收部分包括：形成在半导体衬底上并具有基本上等于或小于半导体衬底的杂质浓度的杂质浓度的半导体层; 在所述半导体层上形成的杂质浓度高于所述半导体层的杂质浓度的第二导电类型的第一半导体区域; 以及第一导电类型的第二半导体区域，其选择性地形成在半导体衬底和半导体层之间，并且具有比半导体衬底和半导体层的杂质浓度更高的杂质浓度。

公开(公告)号：US07483467B2

公开(公告)日：2009-01-27

申请号：US11518173

申请日：2006-09-11

申请人： Naoki Kohara ,  Hironari Takehara ,  Takaki Iwai ,  Hisatada Yasukawa

发明人： Naoki Kohara ,  Hironari Takehara ,  Takaki Iwai ,  Hisatada Yasukawa

IPC分类号： H01S5/00

CPC分类号： H01S5/40 ,  H01S5/026 ,  H01S5/4087

摘要： The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.

摘要翻译： 半导体激光器单元包括具有不同激光束波长的多个半导体激光元件的激光发射部分和具有用于反射从激光发射部分发出的激光束的光反射膜的反射镜部分。 反射镜部分被阻挡到从多个半导体激光元件中的每一个发射的每个激光束进入的多个区域中，并且同时对于选择性地进入该区域的激光束具有高反射率的反射膜是 设置在多个区域的每一个区域中。

公开(公告)号：US20070071049A1

公开(公告)日：2007-03-29

申请号：US11518173

申请日：2006-09-11

申请人： Naoki Kohara ,  Hironari Takehara ,  Takai Iwai ,  Hisatada Yasukawa

发明人： Naoki Kohara ,  Hironari Takehara ,  Takai Iwai ,  Hisatada Yasukawa

IPC分类号： H01S5/00

CPC分类号： H01S5/40 ,  H01S5/026 ,  H01S5/4087

摘要： The semiconductor laser unit comprises a laser emission part having a plurality of semiconductor laser elements of different laser beam wavelengths, and a mirror part having an optical reflection film for reflecting laser beams emitted from the laser emission part. The mirror part is blocked out into a plurality of areas to which each laser beam emitted from each of the plurality of semiconductor laser elements enters, and at the same time the reflection film having high reflectance for the laser beams that enter selectively on the areas is provided in each of the plurality of areas.

摘要翻译： 半导体激光器单元包括具有不同激光束波长的多个半导体激光元件的激光发射部分和具有用于反射从激光发射部分发出的激光束的光反射膜的反射镜部分。 反射镜部分被阻挡到从多个半导体激光元件中的每一个发射的每个激光束进入的多个区域中，并且同时对于选择性地进入该区域的激光束具有高反射率的反射膜是 设置在多个区域的每一个区域中。

公开(公告)号：US06897495B2

公开(公告)日：2005-05-24

申请号：US10270708

申请日：2002-10-11

申请人： Seikoh Yoshida ,  Takahiro Wada ,  Hironari Takehara

发明人： Seikoh Yoshida ,  Takahiro Wada ,  Hironari Takehara

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/80 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L21/28575 ,  H01L29/2003 ,  H01L29/802

摘要： GaN-based FET has a sapphire substrate of about 50 nm thick on which an n-type GaN electron transit layer and an Al0.2Gao0.8N electron supply layer are formed, together with n+-type GaN contact regions sandwiching the electron transit and supply layers therebetween. On the entire faces of these layer and regions is formed a polyimide interlayer insulating film of about 3000 nm thick that is formed with contact holes in which source, drain and gate electrodes are formed, each of which is comprised of a TaSi/Au layer and about 5000 nm in thickness. The source and drain electrodes are ohmic-connected to the n+-type GaN contact regions and the gate electrode is in contact with an SiO2 gate insulating film.

摘要翻译： GaN基FET具有大约50nm厚的蓝宝石衬底，其上形成有n型GaN电子传输层和Al 0.2 N高斯0.8 N电子供应层， 以及夹在其间的电子传输和供给层的n + + + GaN接触区域。 在这些层和区域的整个表面上形成约3000nm厚的聚酰亚胺层间绝缘膜，其形成有形成源极，漏极和栅电极的接触孔，每个都由TaSi / Au层和 约5000nm厚度。 源电极和漏极电极欧姆连接到n + + + GaN接触区域，并且栅极电极与SiO 2栅极绝缘膜接触。

公开(公告)号：US06576927B2

公开(公告)日：2003-06-10

申请号：US10084717

申请日：2002-02-25

申请人： Seikoh Yoshida ,  Hironari Takehara ,  Takahiro Wada

发明人： Seikoh Yoshida ,  Hironari Takehara ,  Takahiro Wada

IPC分类号： H01L2976

CPC分类号： H01L29/66924 ,  H01L29/2003 ,  H01L29/66863 ,  H01L29/802 ,  H01L29/812

摘要： The present invention provides a semiconductor device as an FET integrated object having a small effective area, a small ON resistance during operation, a high voltage resistance, and capable of large-current drive. This device comprises one or more FET's each having a gate electrode, a source electrode, and a drain electrode, and arranged side by side on a single plane to constitute a first block which is stacked on a second block having a configuration identical to the first block, wherein the gate electrode, the source electrode, and the drain electrode of the FET(s) of the first block are directly joined with the gate electrode, the source electrode, and the drain electrode of the FET(s) of the second block, respectively.

摘要翻译： 本发明提供一种作为FET集成物体的半导体器件，其具有小的有效面积，在操作期间的小导通电阻，高电压电阻并且能够进行大电流驱动。 该器件包括一个或多个FET，每个FET具有栅电极，源电极和漏电极，并排设置在单个平面上，以构成第一块，该第一块堆叠在第二块上，该第二块具有与第一块相同的构造 块，其中第一块的FET的栅电极，源电极和漏电极与第二块的FET的栅电极，源电极和漏电极直接接合 块。